FDMS3500 [ONSEMI]
75V N沟道PowerTrench® MOSFET;
| 型号： | FDMS3500 |
| 厂家： | 
ONSEMI |
| 描述： | 75V N沟道PowerTrench® MOSFET |
| 文件： | 总8页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
Top
Bottom
Pin 1
S
S
S
G
75 V, 49 A, 14.5 mW
D
FDMS3500
D
D
D
Power 56
(PQFN8)
CASE 483AE
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.
Features
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
• Max R
• Max R
= 14.5 mW at V = 10 V, I = 11.5 A
GS D
DS(on)
= 16.3 mW at V = 4.5 V, I = 10 A
DS(on)
GS
D
• Advanced Package and Silicon Combination for Low R
• MSL1 Robust Package Design
• 100% UIL Tested
DS(on)
• RoHS Compliant
Applications
MARKING DIAGRAM
• DC−DC Conversion
S
S
D
D
&Z&3&K
FDMS
3500
S
D
D
G
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FDMS3500
= Specific Device Code
ORDERING INFORMATION
†
Device
Package
Shipping
FDMS3500
Power 56 (PQFN8)
(Pb-Free / Halogen
Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2023 − Rev. 3
FDMS3500/D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
75
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
20
V
I
D
A
− Continuous (Package Limit) T = 25°C
− Continuous (Silicon Limited) T = 25C
49
57
9.2
100
C
C
A
− Continuous
− Pulsed
T = 25°C (Note 1a)
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
384
mJ
W
AS
P
D
T
= 25°C
96
2.5
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction Temperature Range
−55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.3
Unit
°C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
75
−
−
−
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
71
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 0 V, V = 60 V
−
−
−
−
1
mA
GS
DS
I
Gate to Source Leakage Current, Forward
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.8
3.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−6.8
−
mV/°C
GS(th)
J
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 11.5 A
−
−
−
−
11.1
12.8
17.6
56
14.5
16.3
23.0
−
mW
DS(on)
D
= 4.5 V, I = 10 A
D
= 10 V, I = 11.5 A, T = 125°C
D
J
g
FS
= 5 V, I = 11.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V, f = 1 MHz
−
−
3580
225
120
1.2
4765
300
175
−
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
f = 1 MHz
0.1
g
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2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
t
t
Turn-On Delay Time
Rise Time
V
= 40 V, I = 11.5 A, V = 10 V,
GEN
−
−
−
−
−
16
9
29
18
77
11
91
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
Turn-Off Delay Time
Fall Time
48
6
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 40 V,
65
g
GS
GS
DD
DD
I
D
= 11.5 A
V
= 0 V to 5 V, V = 40 V,
−
34
48
nC
DD
I
D
= 11.5 A
Q
Gate to Source Charge
V
= 50 V, I = 44 A
−
−
9.9
−
−
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
11.6
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 11.5 A (Note 2)
−
−
−
−
0.8
0.7
38
1.3
1.2
60
V
SD
GS
S
= 0 V, I = 2.1 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 11.5 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
45
72
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25_C, L = 3 mH, I = 16 A, V = 75 V, V = 10 V.
J
AS
DD
GS
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3
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
3.0
2.5
100
80
V
= 10 V
V
GS
= 3 V
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
GS
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 3.5 V
V
GS
= 3.5 V
2.0
1.5
1.0
0.5
60
40
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
V
= 4 V
GS
V
GS
= 3 V
20
0
V
= 10 V
GS
V
GS
= 4.5 V
0
20
40
60
80
100
0
1
2
3
V
DS
, Drain to Source Voltage (V)
I
D,
Drain Current (A)
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
Figure 1. On Region Characteristics
40
30
20
10
0
2.0
1.8
I
V
= 11.5 A
= 10 V
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
D
I
D
= 11.5 A
GS
1.6
1.4
1.2
T = 125°C
J
1.0
T = 25°C
J
0.8
0.6
−75 −50 −25
0
25 50
75 100 125 150
4
10
2
6
8
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
80
100
10
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
V
GS
= 0 V
V
DS
= 5 V
T = 150°C
J
60
40
1
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
T = −55°C
J
20
0
0.01
T = −55°C
J
0.001
0
1
2
3
4
5
0.2
0.0
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10000
10
8
I
D
= 11.5 A
C
iss
V
DD
= 40 V
6
1000
V
DD
=50 V
C
oss
V
DD
= 30 V
4
2
0
100
30
f = 1 MHz
C
rss
V
GS
= 0 V
75
0
10
40
Q ,Gate Charge (nC)
50
60
70
1
10
Drain to Source Voltage (V)
DS
20
30
0.1
V
g
Figure 8. Capacitance vs. Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
20
10
60
50
40
30
V
GS
= 10 V
Limited by
Package
T = 25°C
J
T = 125°C
J
V
GS
= 4.5 V
20
10
R
= 1.3 °C/W
q
JC
1
0.01
0
25
0.1
1
10
100
400
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
400
100
1000
100
10
This Area is
V
GS
= 10 V
Limited by R
DS(ON)
Single Pulse
= 125°C/W
T = 25°C
A
R
θ
JA
10
1 ms
10 ms
1
0.1
100 ms
Single Pulse
T = Max Rated
J
1 s
R
= 1.0°C/W
θ
JA
T = 25°C
A
10 s
DC
1
0.5
10
0.01
−3
−2
−1
1
1
0.1
10
10
10
10
100
1000
100
500
V
DS
Drain to Source Voltage (V
t, Pulse Width (s)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
0.01
t
2
Notes:
Single Pulse
Duty Factor: D = t /t
R
= 125°C/W
1
2
θ
JA
Peak T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
−3
−2
−1
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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© Semiconductor Components Industries, LLC, 2019
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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