FDMS4D0N12C [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，118A，4.0mΩ;
| 型号： | FDMS4D0N12C |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，118A，4.0mΩ |
| 文件： | 总8页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, PQFN8
120 V, 4.0 mW, 114 A
V
I
D
MAX
R
MAX
DS(on)
(BR)DDS
67 A
33 A
4.4 mW @ 10 V
8.8 mW @ 6 V
120 V
FDMS4D0N12C
ELECTRICAL CONNECTION
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• These are Pb−free, Halogen Free / BFR Free and are RoHS
Compliant
Typical Applications
N-Channel MOSFET
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
120
20
Unit
V
PQFN8 5x6
(Power 56)
CASE 483AF
V
DSS
V
GS
V
Continuous Drain
Steady
State
T
C
= 25°C
I
D
114
A
Current R
(Note 7)
θ
JC
MARKING DIAGRAM
Power Dissipation
(Note 2)
P
106
W
A
D
R
$Y&Z&3&K
FDMS
4D0N12C
θ
JC
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
18.5
θ
JA
(Note 6, 7)
Power Dissipation
P
2.7
W
A
D
R
(Note 6, 7)
θ
JA
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Pulsed Drain
Current
T = 25°C, t = 10 μs
I
DM
628
A
p
Operating Junction and Storage
Temperature
T , T
−55 to
+150
°C
J
stg
FDMS4D0N12C
= Specific Device Code
Source Current (Body Diode)
I
114
222
A
S
ORDERING INFORMATION
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
See detailed ordering and shipping information on page 2 of
this data sheet.
Energy (I = 66.7 A, L = 0.1 mH)
AV
Lead Temperature Soldering Reflow for
Soldering Purposes
T
L
300
°C
(1/8” from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2022 − Rev. 4
FDMS4D0N12C/D
FDMS4D0N12C
ORDERING INFORMATION
Device
Package
Shipping†
FDMS4D0N12C
PQFN8
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RqJC
Max
1.18
45
Unit
°C/W
Junction*to*Case – Steady State (Note 7)
Junction*to*Ambient – Steady State (Note 7)
RqJA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain*to*Source Breakdown Voltage
120
V
V
V
= 0 V, I = 250 mA
(BR)DSS
GS D
mV/°C
Drain*to*Source Breakdown Voltage
49
I
D
= 250 mA, ref to 25°C
V
/ T
J
(BR)DSS
Temperature Coefficient
Zero Gate Voltage Drain Current
V
V
= 0 V,
= 96 V
1
I
T = 25°C
mA
mA
nA
DSS
GS
J
DS
T = 125°C
J
100
100
Gate*to*Source Leakage Current
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
= 0 V, V
=
20 V
I
DS
GS
GSS
V
V
= V , I = 370 mA
GS DS D
2.0
4.0
V
GS(TH)
I
D
= 370 mA, ref to 25°C
mV/°C
Negative Threshold Temperature
Coefficient
−8.5
V
/T
J
GS(TH)
mW
Drain*to*Source On Resistance
V
= 10 V, I = 67 A
3.3
4.4
8.8
GS
D
R
DS(on)
V
= 6 V, I = 33 A
4.7
GS
DS
D
144
Forward Transconductance
V
= 5 V, I = 67 A
S
g
FS
D
0.9
Gate−Resistance
T = 25°C
A
1.8
W
R
G
CHARGES & CAPACITANCES
Input Capacitance
V
= 0 V, f = 1 MHz,
4565
2045
17
6460
3060
24
pF
nC
C
GS
ISS
V
DS
= 60 V
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
V
GS
= 6 V, V = 60 V,
36
51
Q
DS
G(TOT)
I
D
= 67 A
V
GS
= 10 V, V = 60 V,
58
21
9
82
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
DS
Q
G(TOT)
I
D
= 67 A
Q
GS
Q
GD
GP
5
V
V
V
DD
= 60 V, V = 0 V
207
nC
Output Charge
Q
GS
OSS
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2
FDMS4D0N12C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 8)
Turn*On Delay Time
Rise Time
V
= 10 V, V = 60 V,
41
16
72
22
ns
25
8
td
GS
DS
(ON)
I
D
= 67 A, R = 6 W
G
t
r
Turn*Off Delay Time
Fall Time
45
12
t
D(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
0.86
0.7
53
1.3
1.2
Forward Diode Voltage
V
V
= 0 V,
= 67 A
V
T = 25°C
SD
GS
J
I
S
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V,
ns
nC
ns
t
84
RR
dI /dt = 300 A/ms,
S
175
36
Q
t
280
57
RR
I
S
= 33 A
V
GS
= 0 V,
RR
dI /dt = 1000 A/ms,
S
360
575
Q
nC
RR
I = 33 A
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 45°C/W when mounted on
b) 115°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 222 mJ is based on starting T = 25°C; L = 0.1 mH, I = 66.7 A, V = 100 V, V = 12 V, 100% tested at L = 0.1 mH, I = 66.7 A.
AS
J
AS
DD
GS
AS
4. Pulsed I please refer to Fig. 11 SOA graph for more details.
D
5. Computed continuous current limited to max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
6. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
2
7. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
8. Switching characteristics are independent of operating junction temperatures.
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3
FDMS4D0N12C
TYPICAL CHARACTERISTICS
40
30
200
150
100
I
= 67 A
D
V
= 10 V
8 V
GS
6 V
5 V
20
10
0
50
0
T = 125°C
J
T = 25°C
J
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
V
DS
, Drain−Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.0
3.0
2.0
1.0
0.0
200
150
100
V
GS
= 10 V
8 V
V
DS
= 5 V
6 V
5 V
25°C
T = 150°C
J
50
0
−55°C
0
50
100
I , Drain Current (A)
150
200
3.0
4.0
5.0
6.0
7.0
V
GS
, Gate to Source Voltage (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. Normalized On-Resistance vs. Drain
Current and Gate Voltage
Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
10
C
iss
I
V
= 67 A
D
= 10 V
GS
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
1
−75 −50 −25
0
25
50
75 100 125 150
0.1
1
10
, Drain to Source Voltage (V)
DS
100
T , Junction Temperature (°C)
J
V
Figure 5. Normalized On−Resistance Variation with
Figure 6. Capacitance Variation
Temperature
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4
FDMS4D0N12C
TYPICAL CHARACTERISTICS (continued)
10
8
V
GS
= 0 V
100
10
V
DD
= 30 V
T = 150°C
J
V
DD
= 60 V
6
1
V
DD
= 90 V
4
0,1
25°C
−55°C
2
0,01
0,001
0
0
12
24
36
48
60
0.0
0.2
0.4
, Source−to−Drain Voltage (V)
SD
0.6
0.8
1.0
1.2
Q , Total Gate Charge (nC)
V
G
Figure 7. Gate−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
100
10
1000
25°C
10 μs
100
100°C
125°C
10
1
100 μs
R
LIMIT
DS(ON)
SINGLE PULSE
= 1.18°C/W
1 ms
R
θ
JC
T
C
= 25°C
10 ms
100 ms/DC
10
0.1
1
0.001
0.01
0.1
t , Time in Avalanche (ms)
AV
1
10
100
1000
0.1
1
100
V
DS
, Drain−Source Voltage (V)
Figure 10. IPEAK vs. Time in Avalanche
Figure 9. Safe Operating Area
120
100
80
60
40
20
0
1000000
100000
V
GS
= 10 V
10000
1000
100
V
= 6 V
GS
R
= 1.18 °C/W
q
JC
10
0.00001 0.0001
0.001
0.01
0.1
1
25
50
75
100
125
150
T , Case Temperature (°C)
C
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Maximum Drain Current vs. Case
Temperature
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5
FDMS4D0N12C
TYPICAL CHARACTERISTICS (continued)
10
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
t, Rectangular Pulse Duration (sec)
Figure 13. Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AF
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13656G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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