FDMS5672 [ONSEMI]
N 沟道，UltraFET Trench® MOSFET，60V，22A，11.5mΩ;
| 型号： | FDMS5672 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET Trench® MOSFET，60V，22A，11.5mΩ 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：681K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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March 2015
FDMS5672
N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5mΩ
Features
General Description
Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A
Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A
Typ Qg = 32nC at VGS = 10V
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Low Miller Charge
Application
Optimized Efficiency at High Frequencies
RoHS Compliant
DC - DC Conversion
S
S
S
G
Pin 1
D
D
G
S
5
6
7
8
4
3
2
1
S
S
D
D
D
D
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
60
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25°C
TC = 100°C
TA = 25°C
65
(Note 5)
(Note 5)
39
ID
A
-Continuous
(Note 1a)
10.6
176
-Pulsed
(Note 4)
(Note 3)
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
337
mJ
W
T
C = 25°C
78
PD
TA = 25°C
(Note 1a)
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.6
50
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDMS5672
FDMS5672
Power 56
3000 units
1
©2006 Fairchild Semiconductor Corporation
FDMS5672 Rev.1.2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
59
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
3.2
-11
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
VGS = 10V, ID = 10.6A
VGS = 6V, ID = 8A
9.4
11.5
16.5
13.0
rDS(on)
Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10V, ID = 10.6A,
TJ = 125°C
15.0
26
18.0
gFS
VDS = 10V, ID = 10.6A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2100
375
120
1.2
2800
500
pF
pF
pF
Ω
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
180
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
16
17
22
8
29
31
35
16
45
ns
ns
V
DD = 30V, ID = 10.6A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
32
10
8.3
nC
nC
nC
VDD = 30V
D = 10.6A
I
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 10.6A (Note 2)
0.80
35
1.20
53
V
ns
nC
IF = 10.6A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
42
63
Notes:
2
R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
1.
θJA
θJC
the user's board design.
a.
125°C/W when mounted on
b.
minimum pad of 2 oz copper
a
50°C/W when mounted on
1 in pad of 2 oz copper
a
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
Starting T = 25°C, L = 3mH, I = 15A, V = 60V, V = 10V.
3.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
J
AS
DD
GS
www.fairchildsemi.com
2
FDMS5672 Rev.1.2
Typical Characteristics TJ = 25°C unless otherwise noted.
120
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 10V
= 8V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 7V
100
80
60
40
20
0
VGS = 5V
VGS = 6V
V
GS
V
GS
VGS = 7V
V
= 6V
GS
VGS = 8V
V
= 5V
GS
VGS = 10V
0
1
2
3
4
0
20
40
60
80
100
120
V , DRAIN TO SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT(A)
D
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.8
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 10.6A
GS = 10V
V
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
5
T = 125oC
J
I
D
=10.6A
T
J
= 25oC
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
60
100
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
50
40
30
1
T = 150oC
J
T
J
= 25oC
T
J
= 25oC
0.1
20
10
0
T
= -55oC
J
T
J
= -55oC
T = 150oC
J
0.01
1E-3
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
www.fairchildsemi.com
3
FDMS5672 Rev.1.2
Typical Characteristics TJ = 25°C unless otherwise noted.
10
4000
1000
I
= 10.6A
D
V
= 20V
DD
8
6
4
2
0
C
iss
V
DD
= 30V
V
DD
= 40V
C
oss
100
40
C
rss
f = 1MHz
= 0V
V
GS
60
0.1
1
10
0
5
10
15
20
25
30
35
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
20
10
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
100
500
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
4
FDMS5672 Rev.1.2
Typical Characteristics TJ = 25°C unless otherwise noted.
Figure 13. Transient Thermal Response Curve
www.fairchildsemi.com
5
FDMS5672 Rev.1.2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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