FDMS7650DC [ONSEMI]
N 沟道，双 CoolTM 56 PowerTrench® MOSFET，30V，100A，0.99mΩ;
| 型号： | FDMS7650DC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，双 CoolTM 56 PowerTrench® MOSFET，30V，100A，0.99mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
DUAL COOL) 56,
Pin 1
S
S
S
G
POWERTRENCH)
30 V, 100 A, 0.99 mW
D
D
D
D
Top
Bottom
FDMS7650DC
DFN8 5x6.15, 1.27P,
DUAL COOL 56
CASE 506EG
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL
COOL package technologies have been combined to offer the lowest
MARKING DIAGRAM
2FAYWZ
r
while maintaining excellent switching performance by
DS(on)
extremely low Junction−to−Ambient thermal resistance.
Features
• DUAL COOL Top Side Cooling PQFN package
• Max r
• Max r
= 0.99 mW at V = 10 V, I = 36 A
GS D
DS(on)
2F
A
Y
W
Z
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
= 1.55 mW at V = 4.5 V, I = 32 A
DS(on)
GS
D
• High performance technology for extremely low r
• This Device is Pb−Free and is RoHS Compliant
DS(on)
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
N−Channel MOSFET
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2023 − Rev. 3
FDMS7650DC/D
FDMS7650DC
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Rating
30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage (Note 4)
+20
V
I
D
Drain Current − Continuous (Package limited)
− Continuous (Silicon limited)
− Continuous
T
T
= 25°C
= 25°C
100
A
C
289
C
T = 25 °C (Note 1a)
A
47
− Pulsed
200
E
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 5)
Power Dissipation
578
mJ
V/ns
W
AS
dv/dt
0.5
P
T
C
= 25°C
125
D
Power Dissipation
T = 25°C (Note 1a)
A
3.3
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
2.3
1
Unit
Thermal Resistance, Junction to Case (Top Source)
Thermal Resistance, Junction to Case (Bottom Drain)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1i)
Thermal Resistance, Junction to Ambient (Note 1j)
Thermal Resistance, Junction to Ambient (Note 1k)
°C/W
R
q
JC
R
q
JC
R
38
q
JA
R
81
q
JA
R
16
q
JA
R
23
q
JA
R
11
q
JA
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2
FDMS7650DC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
ON CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
12
mV/°C
DBVDSS
DTj
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
Gate to Source Leakage Current, Forward
= 20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.1
1.9
2.7
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−7
−
mV/°C
DVGS(th)
DTj
D
r
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 36 A
−
−
−
−
0.6
1
0.99
1.55
1.5
−
mW
DS(on)
D
= 4.5 V, I = 32 A
D
= 10 V, I = 36 A, T = 125°C
0.9
225
D
J
g
FS
Forward Transconductance
= 5 V, I = 36 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
11100
3440
205
14765
4575
310
−
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
1.3
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 15 V, I = 36 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
29
28
46
45
130
32
206
87
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
81
ns
d(off)
t
f
20
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V
= 0 V to 4.5 V
V = 15 V,
DD
D
147
62
nC
nC
nC
nC
g
g
I
= 36 A
Q
= 15 V, I = 36 A
38
gs
gd
D
Q
9.7
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
−
−
−
−
0.7
0.8
75
1.2
1.3
120
98
V
SD
GS
S
= 0 V, I = 36 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 36 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
61
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDMS7650DC
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
2.3
1
Unit
R
θ
JC
R
θ
JC
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Top Source)
Thermal Resistance, Junction to Case (Bottom Drain)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1c)
Thermal Resistance, Junction to Ambient (Note 1d)
Thermal Resistance, Junction to Ambient (Note 1e)
Thermal Resistance, Junction to Ambient (Note 1f)
Thermal Resistance, Junction to Ambient (Note 1g)
Thermal Resistance, Junction to Ambient (Note 1h)
Thermal Resistance, Junction to Ambient (Note 1i)
Thermal Resistance, Junction to Ambient (Note 1j)
Thermal Resistance, Junction to Ambient (Note 1k)
Thermal Resistance, Junction to Ambient (Note 1l)
°C/W
38
81
27
34
16
19
26
61
16
23
11
13
NOTES:
1. R
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
q
θ
JC
JA
design while R
is determined by the user’s board design.
θ
CA
a. 38°C/W when mounted on
b. 0°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2
c. Still air, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d. Still air, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e. Still air, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
f. Still air, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2
g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
2
j. 200FPM Airflow, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
2
l. 200FPM Airflow, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 578 mJ is based on starting T = 25°C; N−ch: L = 1 mH, I = 34 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. I ≤ 3 36 A, di/dt 3 100 A/ms, V ≤ BV , Starting T = 25°C.
SD
DD
DSS
J
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4
FDMS7650DC
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
200
150
100
50
5
V
V
V
V
= 10 V
= 6 V
= 4.5 V
= 4 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
GS
GS
GS
4
3
2
1
0
V
V
= 3.5 V
GS
= 4 V
GS
V
GS
= 3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 10 V
GS
V
GS
= 4.5 V
50
V
= 6 V
GS
0
0.0
0.2
0.4
0.6
0.8
1.0
0
100
150
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
4
I
V
= 36 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
3
2
1
0
I
D
= 36 A
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GAIN TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
200
200
100
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
10
1
150
100
50
T = 150°C
J
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
0.01
0.001
T = −55°C
T = −55°C
J
J
0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GAIN TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Voltage
vs. Source Current
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5
FDMS7650DC
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
10
8
50000
10000
I
D
= 36 A
C
C
iss
V
DD
= 10 V
oss
6
V
DD
= 15 V
4
1000
100
V
DD
= 20 V
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
30
0
30
60
90
120
160
0.1
1
10
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to
Source Voltage
300
250
200
150
100
50
100
40
R
= 1.0°C/W
q
JC
V
GS
= 10 V
T = 25°C
J
V
= 4.5 V
GS
10
T = 125°C
J
T = 100°C
J
Limited by Package
0
25
1
0.01
0.1
1
10
100 1000 10000
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous
Drain Current vs. Case Temperature
2000
500
100
SINGLE PULSE
= 81°C/W
A
1000
100
10
R
q
JA
T = 25°C
10
1 ms
10 ms
100 ms
1 s
10 s
THIS AREA IS
1
0.1
LIMITED BY r
DS(on)
SINGLE PULSE
T = MAX RATED
J
R
= 81°C/W
q
JA
DC
T = 25°C
A
1
0.01
0.01
10−3
10−2
10−1
t, PULSE WIDTH (sec)
1
10
100
1000
0.1
1
10
100 200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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6
FDMS7650DC
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
t1
t2
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
1
2
R
= 81°C/W
q
JA
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
10−3
10−2
10−1
1
0
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
Device Marking
2F
Package
Reel Size
Tape Width
Shipping
FDMS7650DC
13”
12 mm
3000 / Tape & Reel
DFN8 5x6.15, 1.27P, DUAL COOL 56
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DUAL COOL and POWERTRENCH are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
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