FDMS8320L [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，248A，1.1mΩ;
| 型号： | FDMS8320L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，248A，1.1mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FDMS8320L
N-Channel PowerTrench® MOSFET
40 V, 248 A, 1.1 mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed ang body
diode reverse recovery performance.
Features
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Applications
Next generation enhanced body diode technology,
engineered for soft recovery
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
MSL1 robust package design
100% UIL tested
RoHS Compliant
Bottom
Top
Pin 1
S
S
D
D
D
D
S
S
G
S
S
G
Pin 1
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25 °C
TC = 100 °C
TA = 25 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
248
157
ID
A
-Continuous
36
-Pulsed
943
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
264
mJ
W
TC = 25 °C
TA = 25 °C
104
PD
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS8320L
FDMS8320L
Power 56
3000 units
©2012 Semiconductor Componets Industries, LLC.
August-2017, Rev.2
Publication Order Number:
FDMS8320L/D
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
21
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
1.7
-6
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 32 A
0.8
1.0
1.2
206
1.1
1.5
1.7
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 27 A
mΩ
VGS = 10 V, ID = 32 A, TJ = 125 °C
VDS = 5 V, ID = 32 A
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
8350
2840
169
11110
3780
295
pF
pF
pF
Ω
V
DS = 20 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1 MHz
0.1
1.3
2.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
17
19
30
35
ns
ns
V
DD = 20 V, ID = 32 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
68
110
30
ns
17
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
121
58
170
117
nC
nC
nC
nC
Qg
VGS = 0 V to 4.5 V
V
DD = 20 V,
ID = 32 A
Qgs
Qgd
19.2
16.5
Drain-Source Diode Characteristics
Is
Diode Continuous Forward Current
Diode Pulse Current
TC = 25 °C
TC = 25 °C
248
943
1.1
1.2
108
95
A
A
Is, pulse
V
GS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
0.65
0.74
68
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 32 A
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
IF = 32 A, di/dt = 100 A/μs
Qrr
trr
59
53
85
IF = 32 A, di/dt = 300 A/μs
Qrr
104
167
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user's board design.
θJA
θCA
a)
50 °C/W when mounted on a
1 in pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C; N-ch: L = 0.3 mH, I = 42 A, V = 36 V, V = 10 V.
J
AS
DD
GS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
150
5
4
3
2
1
0
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 4 V
120
VGS = 3.5 V
VGS = 3 V
90
VGS = 3.5 V
60
30
PULSE DURATION = 80 μs
VGS = 10 V
120 150
VGS = 4.5 V
VGS = 4 V
DUTY CYCLE = 0.5% MAX
0
0
30
60
90
0
0.2
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 32 A
ID = 32 A
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
4
3
2
1
0
TJ = 125 o
C
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
150
1000
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
10
120
90
60
30
0
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
1
TJ = 25 oC
TJ = 25 o
C
0.1
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
1.0
1.5
2.0
2.5
3.0
3.5
0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
30000
10000
ID = 32 A
8
Ciss
VDD = 20 V
Coss
6
1000
100
10
VDD = 16 V
VDD = 24 V
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
0
25
50
75
100
125
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
250
200
150
100
50
200
100
10
1
VGS = 10 V
TJ = 25 o
C
VGS = 4.5 V
TJ = 100 o
C
TJ = 125 o
C
RθJC = 1.2 oC/W
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
20000
2000
1000
SINGLE PULSE
RθJC = 1.2 oC/W
10000
T
C = 25 o
C
10 us
100
10
1
THIS AREA IS
LIMITED BY rDS(on)
100 us
1 ms
1000
SINGLE PULSE
TJ = MAX RATED
10 ms
DC
R
θJC = 1.2 oC/W
C = 25 oC
100
50
CURVE BENT TO
MEASURE DATA
T
0.1
0.1
10-5
10-4
10-3
10-2
10-1
1
1
10
100 200
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.2 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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