FDMS86181E [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ;
| 型号： | FDMS86181E |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ 栅 |
| 文件： | 总8页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMS86181E
MOSFET, N‐Channel,
Shielded Gate,
POWERTRENCH)
100 V, 124 A, 4.2 mW
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General Description
This N−Channel MV MOSFET is produced using
®
ON Semiconductor’s advanced POWERTRENCH process that
S
D
D
D
incorporates Shielded Gate technology. This process has been
optimized to minimise on−state resistance and yet maintain superior
switching performance with best in class soft body diode.
S
S
G
Features
D
• Shielded Gate MOSFET Technology
• Max r
• Max r
• ADD
= 4.2 mW at V = 10 V, I = 44 A
GS D
DS(on)
N-Channel MOSFET
= 12 mW at V = 6 V, I = 22 A
DS(on)
GS
D
Top
Bottom
S
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
Pin 1
S
S
G
D
D
D
D
• RoHS Compliant
Power 56
(PQFN8)
Applications
CASE 483AE
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
MARKING DIAGRAM
• Solar
S
S
D
D
$Y&Z&3&K
FDMS
86181E
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
S
D
D
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
100
20
Unit
V
G
V
DS
V
GS
V
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
I
D
A
− Continuous T = 25°C (Note 5)
124
78
17
510
C
− Continuous T = 100°C (Note 5)
C
− Continuous T = 25°C (Note 1a)
A
FDMS86181E
= Specific Device Code
− Pulsed (Note 4)
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
337
mJ
W
AS
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
P
D
T
= 25°C
125
2.5
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction Tempera-
ture Range
−55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2018 − Rev. 2
FDMS86181E/D
FDMS86181E
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86181E
FDMS86181E
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.0
Unit
°C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
60
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 80 V, V = 0 V
1
mA
DS
GS
I
Gate to Source Leakage Current, Forward
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
3.1
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−9
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 44 A
3.3
5.3
5.7
116
4.2
12
mW
DS(on)
D
= 6 V, I = 22 A
D
= 10 V, I = 44 A, T = 125°C
7.8
D
J
g
FS
= 10 V, I = 44 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50 V, V = 0 V, f = 1 MHz
2945
1730
20
4125
2425
40
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1MHz
0.1
1.3
2.6
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 44 A, V = 10 V,
GEN
17
9
31
18
40
12
59
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
25
6
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
42
g
GS
GS
DD
DD
I
D
= 44 A
V
= 0 V to 6 V, V = 50 V,
27
38
nC
DD
I
D
= 44 A
Q
Gate to Source Charge
V
= 50 V, I = 44 A
13
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
9.3
gd
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2
FDMS86181E
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.7
0.8
32
1.2
1.3
52
V
SD
GS
S
= 0 V, I = 44 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 20 A, di/dt = 300 A/ms
F
ns
nC
ns
rr
Q
57
92
rr
t
I = 20 A, di/dt = 1000 A/ms
F
25
40
rr
Q
158
253
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a. 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 337 mJ is based on starting T = 25°C, N−ch: L = 3 mH, I = 15 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 49 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
6
300
250
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 8 V
VGS = 6 V
4
2
0
200
150
VGS = 6.5 V
VGS = 6.5 V
VGS = 6 V
100
50
VGS = 8 V
VGS = 5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 10 V
0
0
50
100
150
200
250
300
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
V
I , DRAIN CURRENT (A)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
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3
FDMS86181E
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 44 A
VGS = 10 V
ID = 44 A
15
10
TJ = 125 o
C
5
T = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
0
50
100
150
200
250 300
T , JUNCTION TEMPERATURE (5C)
J
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate
to Source Voltage
300
250
200
300
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
10
1
150
100
TJ = 150 o
C
0.1
0.01
TJ = 25 oC
TJ = 150 o
C
TJ = 25 o
C
50
0
TJ = −55oC
T
J = −55oC
0.001
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10000
10
8
ID = 44 A
Ciss
VDD = 50 V
1000
100
10
Coss
VDD = 25 V
6
VDD = 75 V
4
Crss
f = 1 MHz
2
VGS = 0 V
1
0.1
0
1
10
100
0
10
20
30
40
50
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
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4
FDMS86181E
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
140
120
100
100
10
1
R
qJC = 1.0 oC/W
VGS = 10 V
o
T = 25 C
J
80
o
T = 100 C
J
60
40
20
0
VGS = 6 V
o
T = 125 C
J
0.01
0.1
1
10
100
25
50
75
100
125
150
o
t
, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE (
T
C)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
20000
10000
1000
100
10
SINGLE PULSE
qJC = 1.0oC/W
R
T
C = 25 oC
10 ms
1000
100
10
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
1 ms
1
TJ = MAX RATED
qJC = 1.0oC/W
C = 25 oC
R
10 ms
DC
CURVE BENT TO
MEASURED DATA
T
0.1
0.1
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
qJC
qJC
SINGLE PULSE
o
= 1.0 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
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5
FDMS86181E
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
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6
FDMS86181E
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other coun-
tries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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FDMS86181E/D
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