FDMS86181 [ONSEMI]
N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,124A,4.2mΩ;型号: | FDMS86181 |
厂家: | ONSEMI |
描述: | N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,124A,4.2mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:482K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, Shielded Gate,
POWERTRENCH)
100 V, 124 A, 4.2 mW
S
D
D
D
S
S
G
D
FDMS86181
General Description
N-Channel MOSFET
This N−Channel MV MOSFET is produced using onsemi’s
®
advanced POWERTRENCH process that incorporates Shielded
Top
Bottom
S
Gate technology. This process has been optimized to minimise
on−state resistance and yet maintain superior switching performance
with best in class soft body diode.
Pin 1
S
S
G
D
Features
D
D
D
• Shielded Gate MOSFET Technology
Power 56
(PQFN8)
CASE 483AE
• Max r
• Max r
• ADD
= 4.2 mW at V = 10 V, I = 44 A
GS D
DS(on)
= 12 mW at V = 6 V, I = 22 A
DS(on)
GS
D
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
MARKING DIAGRAM
S
S
D
D
$Y&Z&3&K
FDMS
86181
• RoHS Compliant
S
D
D
Applications
G
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
• Solar
FDMS86181
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
100
20
Unit
V
V
DS
V
GS
V
I
D
A
− Continuous T = 25°C (Note 5)
124
78
17
510
C
− Continuous T = 100°C (Note 5)
C
− Continuous T = 25°C (Note 1a)
A
− Pulsed (Note 4)
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
337
mJ
W
AS
P
D
T
= 25°C
125
2.5
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction Tempera-
ture Range
−55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2020 − Rev. 3
FDMS86181/D
FDMS86181
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86181
FDMS86181
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.0
Unit
°C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
60
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 80 V, V = 0 V
1
mA
DS
GS
I
Gate to Source Leakage Current, Forward
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
3.1
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−9
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 44 A
3.3
5.3
5.7
116
4.2
12
mW
DS(on)
D
= 6 V, I = 22 A
D
= 10 V, I = 44 A, T = 125°C
7.8
D
J
g
FS
= 10 V, I = 44 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50 V, V = 0 V, f = 1 MHz
2945
1730
20
4125
2425
40
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1MHz
0.1
1.3
2.6
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 44 A, V = 10 V,
GEN
17
9
31
18
40
12
59
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
25
6
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
42
g
GS
GS
DD
DD
I
D
= 44 A
V
= 0 V to 6 V, V = 50 V,
27
38
nC
DD
I
D
= 44 A
Q
Gate to Source Charge
V
= 50 V, I = 44 A
13
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
9.3
gd
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2
FDMS86181
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.7
0.8
32
1.2
1.3
52
V
SD
GS
S
= 0 V, I = 44 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 20 A, di/dt = 300 A/ms
F
ns
nC
ns
rr
Q
57
92
rr
t
I = 20 A, di/dt = 1000 A/ms
F
25
40
rr
Q
158
253
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a. 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 337 mJ is based on starting T = 25°C, N−ch: L = 3 mH, I = 15 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 49 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
6
300
250
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 8 V
VGS = 6 V
4
2
0
200
150
VGS = 6.5 V
VGS = 6.5 V
VGS = 6 V
100
50
VGS = 8 V
VGS = 5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 10 V
0
0
50
100
150
200
250
300
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
V
I , DRAIN CURRENT (A)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
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3
FDMS86181
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 44 A
VGS = 10 V
ID = 44 A
15
10
TJ = 125 o
C
5
T = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (5C)
J
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate
to Source Voltage
300
250
200
300
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
10
1
150
100
TJ = 150 o
C
0.1
0.01
TJ = 25 oC
TJ = 150 o
C
TJ = 25 o
C
50
0
TJ = −55oC
TJ = −55oC
0.001
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10000
10
8
ID = 44 A
Ciss
VDD = 50 V
1000
100
10
Coss
VDD = 25 V
6
VDD = 75 V
4
Crss
f = 1 MHz
2
VGS = 0 V
1
0.1
0
1
10
100
0
10
20
30
40
50
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
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4
FDMS86181
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
140
120
100
100
10
1
R
qJC = 1.0 oC/W
VGS = 10 V
o
T = 25 C
J
80
o
T = 100 C
J
60
40
20
0
VGS = 6 V
o
T = 125 C
J
0.01
0.1
1
10
100
25
50
75
100
125
150
o
t
, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE (
T
C)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
20000
10000
1000
100
10
SINGLE PULSE
qJC = 1.0oC/W
R
T
C = 25 oC
10 ms
1000
100
10
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
1 ms
1
TJ = MAX RATED
qJC = 1.0oC/W
C = 25 oC
R
10 ms
DC
CURVE BENT TO
MEASURED DATA
T
0.1
0.1
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
qJC
qJC
SINGLE PULSE
o
= 1.0 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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