FDMS86255 [ONSEMI]
N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，45A，12.4mΩ;
| 型号： | FDMS86255 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，45A，12.4mΩ |
| 文件： | 总8页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
Shielded Gate,
POWERTRENCH®
150ꢀV, 62ꢀA, 12.4ꢀmW
Pin 1
S
S
S
G
Pin 1
D
D
D
D
Top
Bottom
FDMS86255
PQFN8 5X6, 1.27P
CASE 483AG
Description
This N−Channel MOSFET is produced using onsemi advanced
POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for the on−state
resistance and yet maintain superior switching performance.
D
D
D
S
S
S
Features
• Shielded Gate MOSFET Technology
D
G
• Max R
• Max R
= 12.4 mW at V = 10 V, I = 10 A
GS D
DS(on)
= 15.5 mW at V = 6 V, I = 8 A
DS(on)
GS
D
• Advanced Package and Silicon Combination for Low R
and
MARKING DIAGRAM
DS(on)
High Efficiency
• Next Generation Enhanced Body Diode Technology, Engineered for
Soft Recovery
$Y&Z&3&K
• MSL1 Robust Package Design
• 100% UIL Tested
• RoHS Compliant
$Y
= Logo
= Assembly Location
= Date Code (Year and Week)
= Specific Device Code
• These Device is Halogen Free
&Z
&3
&K
Applications
• OringFET / Load Switching
• Synchronous Rectification
• DC−DC Conversion
ORDERING INFORMATION
See detailed ordering and shipping information on
page 6 of this data sheet.
Publication Order Number:
© Semiconductor Components Industries, LLC, 2002
1
FDMS86255/D
September, 2022 − Rev. 1
FDMS86255
MOSFET MAXIMUM RATINGS T = 25 °C unless otherwise noted
A
Symbol
Parameter
Rating
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
150
20
62
V
I
D
Drain Current Continuous, T = 25°C
A
C
Continuous, T = 25°C (Note 1a)
10
A
Pulsed (Note 4)
271
E
Single Pulse Avalanche Energy (Note 3)
541
mJ
W
AS
P
Power Dissipation, T = 25°C
113
D
C
Power Dissipation, T = 25°C (Note 1a)
2.7
A
T
T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
1.1
Unit
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
θ
JC
JA
R
45
θ
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 μA, V = 0 V
150
−
−
−
V
DSS
D
GS
ΔBV
ΔT
Breakdown Voltage Temperature
Coefficient
= 250 μA, referenced to 25°C
−
109
mV/°C
DSS
D
J
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
−
−
−
−
1
μA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
V
I
= V , I = 250 μA
2.0
3.0
4.0
V
GS
DS D
ΔVGS(th) Gate to Source Threshold Voltage
= 250 μA, referenced to 25°C
−
−11
−
mV/°C
D
Temperature Coefficient
ΔT
J
R
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 10 A
−
−
−
−
9.5
11.5
19
12.4
15.5
25
mΩ
DS(ON)
D
= 6 V, I = 8 A
D
= 10 V, I = 10 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 10 A
35
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 75 V, V = 0 V,
−
−
3200
291
11
4480
410
20
pF
pF
pF
Ω
ISS
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
OOS
Crss
−
R
0.1
0.7
2.1
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 75 V, I = 10 A,
−
−
−
−
−
−
21
4.5
28
34
10
45
12
63
41
ns
ns
ns
ns
nC
nC
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
6.2
45
Q
Q
Total Gate Charge
Total Gate Charge
V
V
= 0 V to 10 V
= 0 V to 6 V
V
I
= 75 V,
g
g
GS
DD
D
= 10 A
29
GS
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2
FDMS86255
ELECTRICAL CHARACTERISTICS (continued)T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
SWITCHING CHARACTERISTICS
Qgs
Qgd
Gate to Source Charge
−
−
14
−
−
nC
nC
Gate to Drain “Miller” Charge
8.8
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 1.9 A (Note 2)
−
−
−
−
0.7
0.8
87
1.2
1.3
V
SD
GS
S
= 0 V, I = 10 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 10 A, di/dt = 100 A/ms
F
139
264
ns
rr
Q
Reverse Recovery Charge
165
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
θ
CA
b. 115°C/W when mounted on a
minimum pad of 2 oz copper.
2
a. 45°C/W when mounted on a 1 in
pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 541 mJ is based on starting T = 25 °C, L = 3 mH, I = 19 A, V = 150 V, V = 10 V. 100% tested at L = 0.1 mH, I = 60 A.
AS
J
AS
DD
GS
AS
4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area.
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3
FDMS86255
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
4
100
80
V
GS
= 4.5 V
V
GS
= 10 V
V
= 5 V
GS
3
2
1
0
V
GS
= 6 V
60
V
GS
= 5.5 V
V
GS
= 5.5 V
40
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 5 V
V
= 10 V
V
GS
= 6 V
20
0
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs
Drain Current and Gate Voltage
50
40
30
20
2.5
2.0
2.0
1.5
I
V
= 10 A
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
GS
I
D
= 10 A
T = 125°C
J
T = 25°C
J
1.0
0.5
10
0
4
6
8
10
−60
−30
0
30
60
90
120
150
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs
Figure 4. On−Resistance vs Gate to
Junction Temperature
Source Voltage
100
80
100
10
1
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
DS
= 5 V
T = 150°C
J
T = 150°C
J
60
T = 25°C
J
T = 25°C
J
40
0.1
20
0
0.01
T = −55°C
J
T = −55°C
J
0.001
2
3
4
5
6
7
1.2
0.0
0.2
0.4
0.6
0.8
1.0
SD
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
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4
FDMS86255
TYPICAL CHARACTERISTICS (continued) T = 25°C unless otherwise noted
J
10000
10
8
I
= 10 A
D
C
iss
1000
100
10
V
= 75 V
DD
C
oss
6
V
DD
= 50 V
V
DD
= 100 V
4
C
rss
2
0
f = 1 MHz
= 0 V
V
GS
5
0.1
1
10
100
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source
Voltage
80
64
48
32
100
T = 25°C
J
T = 100°C
J
V
GS
= 10 V
10
V
= 6 V
GS
T = 125°C
16
0
J
R
= 1.1°C/W
θ
JC
1
0.01
25
50
75
100
125
150
0.1
1
10
100 300
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
20000
10000
SINGLE PULSE
= 1.1°C/W
R
θ
JC
T
C
= 25°C
10 ms
1000
100 ms
THIS AREA IS
LIMITED BY R
1 ms
1
DS(on)
100
10
10 ms
DC
SINGLE PULSE
TJ = MAX TARED
0.1
R
= 1.1°C/W
θ
JC
CURVE BENT TO
MEASURED DATA
T
C
= 25°C
0.01
−2
−1
−5
−4
−3
10
10
1
0.1
1
10
100
700
10
10
10
V
DS
, DRAIN−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMS86255
TYPICAL CHARACTERISTICS (continued) T = 25°C unless otherwise noted
J
2
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
Notes:
(t)= r(t) x R
0.01
Z
q
q
JC
JC
SINGLE PULSE
R
= 1.1°C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t /t
1
2
0.001
−5
−4
−3
−2
−1
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
3000 / Tape and Reel
FDMS86255
FDMS86255
PQFN8
(Halogen Free)
13"
12 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AG
ISSUE A
DATE 25 JUN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13657G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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