FDN5630 [ONSEMI]
N 沟道，Power Trench® MOSFET，60V，1.7A，100mΩ;
| 型号： | FDN5630 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，60V，1.7A，100mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
SOT−23−3
CASE 527AG
60 V
FDN5630
D
General Description
This N−Channel MOSFET has been designed specifically
to improve the overall efficiency of dc−dc converters using either
synchronous or conventional switching PWM controllers.
S
G
This MOSFET features very low R
in a small SOT23
DS(on)
footprint. onsemi’s POWERTRENCH technology provides faster
switching than other MOSFETs with comparable R
specifications. The result is higher overall efficiency with less board
space.
DS(on)
MARKING DIAGRAM
&E&Y
5630&G
Features
−1.7 A, 60 V
R
R
= 0.100 ꢀ @ V = 10 V
DS(on)
GS
&E
&Y
= Designates Space
= Binary Calendar Year Coding Scheme
= 0.120 ꢀ @ V = 6 V
DS(on)
GS
5630 = Specific Device Code
&G
Optimized for Use in High Frequency DC−DC Converters
Low Gate Charge
= Date Code
Very Fast Switching
ORDERING INFORMATION
SUPERSOTt−3 Provides Low R
in SOT23 Footprint
DS(on)
†
This Device is Pb−Free and Halogen Free
Device
Package
Shipping
3000 /
Tape & Reel
FDN5630
SOT−23−3
(Pb−Free)
Applications
DC−DC Converters
Motor Drives
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
December, 2022 − Rev. 5
FDN5630/D
FDN5630
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DSS
GSS
Drain−Source Voltage
Gate−Source Voltage
60
20
V
V
I
D
Drain Current – Continuous (Note 1a)
1.7
A
Drain Current – Pulsed
10
P
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Operating and Storage Junction Temperature Range
0.5
W
D
0.46
T , T
55 to +150
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
250
Unit
C/W
C/W
R
ꢁ
JA
R
75
ꢁ
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 ꢂ A
60
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 A,
Referenced to 25C
−
63
mV/C
ꢃ BVDSS
ꢃ TJ
D
I
Zero Gate Voltage Drain Current
V
DS
V
GS
V
GS
= 48 V, V = 0 V
−
−
−
−
−
−
1
ꢂ A
nA
nA
DSS
GS
I
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
= 20 V, V = 0 V
100
−100
GSSF
GSSR
DS
I
= −20 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 ꢂ A
1
2.4
3
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 250 ꢂ A,
Referenced to 25C
−
−6.9
−
mV/C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain–Source On–Resistance
V
V
= 10 V, I = 1.7 A
−
−
0.073
0.127
0.100
0.180
ꢀ
DS(on)
GS
D
= 10 V, I = 1.7 A
GS
D
T = 125C
J
V
GS
V
GS
V
DS
= 6 V, I = 1.6 A
−
5
−
0.083
0.120
D
I
On–State Drain Current
= 10 V, V = 1.7 V
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 1.7 A
6
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V,
−
−
−
400
65
560
95
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
27
40
rss
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2
FDN5630
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 2)
t
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 30 V, I = 1 A,
−
−
−
−
−
−
−
10
6
20
15
28
15
10
−
ns
d(on)
DD
GS
D
= 10 V, R
= 6 ꢀ
GEN
t
r
15
5
d(off)
t
f
Q
V
DS
V
GS
= 20 V, I = 1.7 A,
7
nC
g
D
= 10 V
Q
1.6
1.2
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = 0.42 A (Note 2)
I
−
−
−
0.42
1.2
A
V
S
V
SD
V
GS
0.72
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
JC
JA
2
a) 250C/W when mounted on a 0.02 in pad of 2 oz. copper.
b) 270C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300 ꢂ s, Duty Cycle 2.0%
TYPICAL CHARACTERISTICS
10
8
1.5
1.4
4.5 V
5.0 V
6.0 V
= 10 V
V
GS
= 4.5 V
V
GS
5.0 V
7.0 V
4.0 V
3.5 V
1.3
1.2
1.1
6
4
2
0
6.0 V
10 V
1.0
0.9
0
1
2
3
4
5
0
2
4
6
8
I , Drain Current (A)
D
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
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3
FDN5630
TYPICAL CHARACTERISTICS (CONTINUED)
2
0.25
0.20
0.15
I
V
= 1.7 A
D
I
D
= 1.7 A
1.8
= 10 V
GS
1.6
1.4
1.2
T = 125C
A
0.10
1.0
0.8
0.6
0.4
T = 25C
A
0.05
0
−50
−25
0
25
50
75
100 125
150
2
4
6
8
10
T , Junction Temperature (5C)
J
V
GS
, Gate To Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
10
10
V
GS
= 0 V
V
DS
= 5 V
8
6
4
2
0
T = 125C
A
1
0.1
125C
T = −55C
A
25C
25C
0.01
0.001
−55C
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, Gate To Source Voltage (V)
V
SD
, Body Diode Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
10
600
500
400
C
f = 1 MHz
V
DS
= 10 A
30 V
I
D
= 1.7 V
20 V
V
GS
= 0 V
8
6
C
iss
300
200
100
4
2
C
oss
C
rss
0
0
0
2
4
6
8
0
10
20
30
40
50
60
Q , Gate Charge (nC)
g
V
DS
, Drain To Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
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4
FDN5630
TYPICAL CHARACTERISTICS (CONTINUED)
10
1
20
100 ꢂ s
R
Limit
DS(on)
Single Pulse
R
= 270C/W
ꢁ
JA
T = 25C
A
1 ms
16
12
8
10 ms
100 ms
0.1
V
= 10 V
1 s
GS
Single Pulse
4
R
= 270C/W
10 s
ꢁ
JA
T = 25C
A
DC
0.01
0
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
V
DS
, Drain−Source Voltage (V)
Single Pulse Time (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t)= r(t) * R
ꢁ
JA
ꢁ
JA
R
270C/W
ꢁ
JA =
0.05
0.05
0.02
P(pk)
0.02
0.01
t
1
0.01
0.005
t
2
Single Pulse
0.001
T − T = P * R (t)
ꢁ
JA
J
A
0.002
0.001
Duty Cycle, D = t / t
1
2
0.0001
0.01
0.1
t , Time (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
SUPERSOT is a trademark and POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its
affiliates and/or subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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相关型号：
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