FDN5632N-F085 [ONSEMI]
N 沟道逻辑电平 PowerTrench® MOSFET 60V，1.6A，98mΩ;
| 型号： | FDN5632N-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平 PowerTrench® MOSFET 60V，1.6A，98mΩ |
| 文件： | 总7页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel, Logic
Level, POWERTRENCH)
V
r
MAX
I MAX
D
DDS
DS(on)
60 V
82 mW @ 10 V
98 mW @ 4.5 V
1.6 A
60 V, 1.6 A, 98 mW
FDN5632N-F085
Features
• R
• R
= 98 mW at V = 4.5 V, I = 1.6 A
GS D
DS(on)
DS(on)
= 82 mW at V = 10 V, I = 1.7 A
GS
D
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
• Typ Q
= 9.2 nC at V = 10 V
GS
g(TOT)
• Low Miller Charge
• UIS Capability
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free, Halide Free and is RoHS Compliant
MARKING DIAGRAM
5632M
Applications
• DC/DC Converter
• Motor Drives
5632 = Specific Device Code
M
= Date Code
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
PIN ASSIGNMENT
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
Unit
V
V
DSS
60
D
V
GS
20
V
I
D
Drain Current Continuous (V = 10 V)
1.7
A
GS
Pulsed
10
E
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
74
1.1
mJ
W
AS
P
D
G
S
T , T
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
−55 to +150
75
°C
J
STG
JC
R
°C/W
°C/W
q
q
R
111
JA
2
TO−252, 1 in Copper Pad Area
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 74 mJ is 100% test at L = 80 mH, I = 1.4 A, starting T = 25°C
AS
AS
J
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2023 − Rev. 3
FDN5632N−F085/D
FDN5632N−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
= 250 mA, V = 0 V
60
−
−
−
−
−
−
V
VDSS
D
GS
I
V
V
V
= 48 V, V = 0 V
1
mA
DSS
DS
DS
GS
GS
= 48 V, V = 0 V T = 125°C
−
250
100
GS
A
I
Gate to Source Leakage Current
=
20 V
−
nA
GSS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
= V , I = 250 mA
1
−
−
−
−
2.0
57
3
82
88
98
135
V
GS(th)
DS(on)
GS
DS D
r
I
D
I
D
I
D
I
D
= 1.7 A, V = 10 V
mW
GS
= 1.6 A, V = 6 V
62
GS
= 1.6 A, V = 4.5 V
70
GS
= 1.7 A, V = 10 V, T = 150°C
107
GS
A
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
475
60
−
−
pF
pF
pF
W
iss
DS
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Gate Resistance
30
−
R
f = 1MHz
1.4
9.2
1.5
1.4
−
G
Q
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
DD
= 0 to 10 V
V
DD
= 20 V, I = 1.7 A
12
−
nC
nC
nC
g(TOT)
D
Q
Q
= 20 V, I = 1.7 A
D
gs
gd
−
SWITCHING CHARACTERISTICS
t
Turn−On Time
Turn−On Delay Time
Rise Time
V
DD
V
GS
= 30 V, I = 1.0 A
−
−
−
−
−
−
−
30
−
ns
ns
ns
ns
ns
ns
on
D
= 10 V, R
= 6 W
GEN
t
15
1.7
5.2
1.3
−
d(on)
t
r
−
t
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
−
t
off
Turn−Off Time
12.9
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
I
I
= 1.7 A
−
−
−
−
0.8
0.8
1.25
1.0
V
SD
SD
SD
SD
= 0.85 A
t
Reverse Recovery Time
= 1.7 A, dI /dt = 100 A/ms
16.0
7.9
21
ns
rr
SD
Q
Reverse Recovery Charge
10.3
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDN5632N−F085
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3
2
CURRENT LIMITED
BY PACKAGE
V
= 10 V
GS
V
GS
= 4.5 V
1
R
= 111°C/W
q
JA
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
PDM
0.01
t1
0.1
t2
NOTES:
SINGLE PULSE
DUTY FACTOR: D = t / t
R
= 111°C/W
1
2
q
JA
PEAK T = P
x Z
x R
+ T
JA C
q
q
J
DM
JA
0.01
10−3
10−2
10−1
100
101
102
103
104
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
100
10
1
TC = 25°C
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
V
= 10 V
GS
150 * TC
Ǹ
I + I2 ƪ ƫ
125
SINGLE PULSE
R
= 111°C/W
q
JA
10−3
10−2
10−1
1
10
102
103
104
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
FDN5632N−F085
TYPICAL CHARACTERISTICS
12
30
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
DD
= 5 V
100 ms
9
6
3
0
1
1 ms
10 ms
100 ms
OPERATION IN THIS
AREA MAY BE
0.1
TJ = 25°C
LIMITED BY r
DS(on)
TJ = −55°C
1 s
DC
SINGLE PULSE
T = MAX RATED
J
TJ = 150°C
T = 25°C
A
0.001
0.01
0.1
1
10
100 300
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
12
200
150
100
50
V
V
V
= 10 V
= 6 V
= 5 V
GS
GS
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
9
6
3
0
I
D
= 1.7 A
V
GS
= 4.5 V
V
= 3.5 V
GS
V
GS
= 4 V
T = 150°C
J
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
T = 25°C
J
V
= 3 V
GS
0
0
1
2
3
4
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On−Resistance
Variation vs. Gate to Source Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.4
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= V
GS DS
= 250 mA
I
D
1.2
1.0
0.8
0.6
0.4
I
V
= 1.7 A
D
= 10 V
GS
−80
−40
0
40
80
120
160
−80
−40
0
40
80
120
160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Normalized Drain to Source On
Resistance vs. Junction Temperature
Figure 10. Normalized Gate Threshold Voltage
vs. Junction Temperature
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4
FDN5632N−F085
TYPICAL CHARACTERISTICS
1000
1.15
1.10
1.05
1.00
0.95
0.90
I
D
= 250 mA
C
iss
100
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
10
0.1
−80
−40
0
40
80
120
160
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
50
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 11. Normalized Drain to Source
Figure 12. Capacitance vs. Drain to Source Voltage
Breakdown Voltage vs. Junction Temperature
10
I
D
= 1.7 A
V
DD
= 20 V
8
6
4
2
0
V
= 30 V
DD
V
DD
= 40 V
0
3
6
9
12
Q , GATE CHARGE (nC)
g
Figure 13. Gate Charge vs. Gate to Source Voltage
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDN5632N−F085
5632
SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
(Pb−Free, Halide Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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