FDP047N10 [ONSEMI]
功率 MOSFET，N 沟道，QFET®，100 V，164 A，4.7 mΩ，TO-220;
| 型号： | FDP047N10 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，100 V，164 A，4.7 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1055K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2013 年12 月
FDP047N10
®
N 沟道PowerTrench MOSFET
100 V，164 A，4.7 m
特性
•
说明
此N 沟道MOSFET 采用飞兆半导体先进的PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越
开关性能而定制的。
RDS(on) = 3.9 m (Typ.)@VGS = 10 V, ID = 75 A
• 快速开关速度
• 低栅极电荷
应用
• 用于ATX/Server/Telecom PSU 的同步整流
• 高性能沟道技术可实现极低的RDS(on)
• 高功率和高电流处理能力
• 符合RoHS 标准
• 电池保护电路
• 电机驱动和不间断电源
• 微型太阳能逆变器
D
G
G
D
S
TO-220
S
MOSFET 最大额定值TC = 25oC 除非另有说明。
FDP047N10
100
符号
VDSS
VGSS
参数
单位
V
漏极－源极电压
栅极－源极电压
±20
V
A
164*
漏极电流
－ 连续（TC =
25oC，硅限制）
－ 连续（TC = 100oC，硅限制）
－ 连续（TC = 25oC，封装限制）
ID
116*
A
120
A
IDM
－脉冲
（注1）
（注2）
（注3）
656*
A
漏极电流
EAS
dv/dt
1153
6.0
mJ
V/ns
W
W/oC
oC
oC
单脉冲雪崩能量
二极管恢复dv/dt 峰值
(TC = 25oC)
－超过25oC 时降额
375
PD
功耗
2.5
TJ, TSTG
TL
-55 至+175
300
工作和存储温度范围
用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒
* 根据最大允许结温计算的连续电流。封装限流为120A。
热性能
FDP047N10
0.4
符号
参数
单位
RJC
RJA
结至外壳热阻最大值
结至环境热阻最大值
oC/W
62.5
www.fairchildsemi.com
1
©2008 飞兆半导体公司
FDP047N10 Rev. C2
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FDP047N10
FDP047N10
TO-220
不适用
50 单元
电气特性TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 A, VGS = 0 V, TJ = 25oC
D = 250 A，参考25oC
100
-
-
-
-
V
漏极－源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
I
0.1
V/oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TC = 150oC
-
-
-
-
-
-
1
IDSS
IGSS
A
零栅极电压漏极电流
栅极－体漏电流
500
±100
VGS = ±20 V, VDS = 0 V
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
2.5
3.5
3.9
170
4.5
4.7
-
V
m
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
Coss
Crss
-
-
-
11500
1120
455
15265
1500
680
pF
pF
pF
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
输出电容
反向传输电容
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
174
386
344
244
160
56
358
782
698
499
210
-
ns
ns
导通延迟时间
V
V
DD = 50 V, ID = 75 A,
GS = 10 V, RG = 25
开通上升时间
ns
关断延迟时间
ns
（说明4）
（说明4）
关断下降时间
Qg(tot)
Qgs
Qgd
nC
nC
nC
10V 的栅极电荷总量
栅极－源极栅极电荷
栅极－漏极“ 密勒” 电荷
V
V
DS = 80 V, ID = 75 A,
GS = 10 V
36
-
漏极－源极二极管特性
IS
-
-
-
-
-
-
-
164*
656
1.25
-
A
A
漏极－源极二极管最大正向连续电流
漏极－源极二极管最大正向脉冲电流
漏极－源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 75 A
-
V
88
245
ns
nC
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 0.41 mH，I = 75 A，V = 50 V，R = 25 ，启动T = 25°C。
AS
DD
G
J
3. I
75 A，di/dt 200 A/ms，V
BV
，启动T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2008 飞兆半导体公司
2
FDP047N10 Rev. C2
典型性能特征
图1. 导通区域特性
图2. 传输特性
300
400
7V
8V
10V
6.5 V
6.0 V
100
10
1
175oC
100
-55oC
25oC
5.5 V
VGS = 5V
*Notes:
*Notes:
1. VDS = 20V
10
6
1. 250s Pulse Test
2. TC = 25oC
2. 250s Pulse Test
0.1
1
5
2
4
6
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源电流
10
300
8
100
175oC
6
25oC
VGS = 10V
4
VGS = 20V
10
2
2
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
300
2. 250s Pulse Test
0
0
100
200
400
0.0
0.5
1.0
1.4
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷
16000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 20V
VDS = 50V
VDS = 80V
= C + C
ds gd
= C
gd
oss
rss
14000
12000
10000
8000
6000
4000
2000
0
Ciss
8
*Note:
1. VGS = 0V
2. f = 1MHz
6
Coss
4
2
Crss
*Note: ID = 75A
120 150
0
0.1
1
10
30
0
30
60
90
180
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2008 飞兆半导体公司
3
FDP047N10 Rev. C2
典型性能特征（接上页）
图7. 击穿电压变化与温度
图8. 导通电阻变化与温度
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250A
2. ID = 75A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳体温度
1000
200
10s
100s
100
150
1ms
10ms
100ms
DC
10
100
Operation in This Area
is Limited by R DS(on)
Limited by package
*Notes:
1. TC = 25oC
1
50
2. TJ = 175oC
3. Single Pulse
0.1
0.1
0
25
1
10
100 200
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 瞬态热响应曲线
1
0.5
0.1
0.2
PDM
0.1
0.05
t1
t2
0.02
0.01
0.01
*Notes:
1. ZJC(t) = 0.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t1，矩形脉冲持续时间[ 秒]
www.fairchildsemi.com
©2008 飞兆半导体公司
4
FDP047N10 Rev. C2
I
= 常量
G
图12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图13. 阻性开关测试电路与波形
VGS
图14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
5
FDP047N10 Rev. C2
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图15. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
6
FDP047N10 Rev. C2
机械尺寸
图16. TO220，模塑，3 引脚，非Jedec Variation AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-0R3
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©2008 飞兆半导体公司
7
FDP047N10 Rev. C2
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®*
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Global Power ResourceSM
GreenBridge™
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PowerXS™
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QS™
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™
®
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®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
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®
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Marking Small Speakers Sound Louder
and Better™
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®
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I66
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©2008 飞兆半导体公司
FDP047N10 Rev. C2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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