FDP3651U [ONSEMI]
N 沟道 PowerTrench® MOSFET 100V,80A,18mΩ;型号: | FDP3651U |
厂家: | ONSEMI |
描述: | N 沟道 PowerTrench® MOSFET 100V,80A,18mΩ 局域网 开关 脉冲 晶体管 |
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October 2013
FDP3651U
N-Channel PowerTrench MOSFET
100 V, 80 A, 18 mΩ
®
Features
Applications
RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
High Performance Trench Technology for Extremely
Low RDS(on)
•
•
•
•
•
•
•
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
• Low Miller Charge
Motor drives and Uninterruptible Power Supplies
• UIS Capability (Single Pulse and Repetitive Pulse)
Micro Solar Inverter
D
G
D
S
G
TO-220
S
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
VDSS
VGSS
Parameter
FDP3651U
100
Unit
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
±20
V
80
ID
A
(Note 1)
(Note 2)
320
PD
Power Dissipation
255
W
mJ
°C
EAS
Single Pulsed Avalanche Energy
266
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
TL
300
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient, Max.
Thermal Resistance , Junction to Case, Max.
62
°C/W
°C/W
0.59
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
N/A
Quantity
50 units
FDP3651U
FDP3651U
Tube
1
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
100
-
-
-
-
-
V
-
-
-
1
µA
µA
nA
VDS = 80V
IDSS
V
GS = 0V
TC=150°C
250
±100
IGSS
VGS = ±20V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
GS = 10V , ID = 80A
3.5
4.5
15
13
32
5.5
18
15
37
V
V
-
-
-
rDS(on)
Drain to Source On Resistance
VGS = 10V , ID = 40A
VGS=10V, ID=40A,TJ=175oC
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
4152
485
89
5522
728
118
69
pF
pF
pF
nC
nC
nC
nC
VDS = 25V,VGS = 0V
f=1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qg(TOT)
Qg(TH)
Qgs
VGS = 0V to 10V
49
VDD = 50V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
VGS = 0V to 2V
7
9.8
-
ID = 80A
23
Qgd
16
-
Resistive Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
64
27
29
52
26
78
ns
ns
ns
ns
ns
ns
15
16
32
14
-
V
V
DD = 50V, ID = 80A
GS = 10V, RGS = 5.0Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
t(off)
Turn-Off Time
Drain-Source Diode Characteristics
I
SD = 80A
-
-
-
-
0.99
0.88
70
1.25
1.0
V
V
VSD
Source to Drain Diode Forward Voltage
ISD = 40A
trr
Reverse Recovery Time
105
303
ns
nC
Is = 40 A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
202
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
o
2. L=0.13mH, I = 64A, V =50V, R =25 Ω , Starting T =25 C
AS
DD
G
J
2
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©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
Typical Characteristics T = 25°C unless otherwise noted
C
5
4
3
2
1
0
120
100
80
60
40
20
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 7V
VGS = 20V
VGS = 10V
VGS = 8V
VGS = 8V
VGS = 10V
VGS = 20V
VGS = 7V
0
20
40
60
80
100
120
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.8
60
ID = 80A
ID = 80A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
2.4
2.0
1.6
1.2
0.8
0.4
50
40
TJ = 175oC
30
20
TJ = 25oC
10
0
-80
-40
0
40
80
120
160
200
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
1000
120
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
100
100
TJ = 175oC
10
80
TJ = 175oC
1
60
TJ = 25oC
0.1
0.01
40
20
0
TJ = 25oC
TJ = -55oC
TJ = -55oC
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
Typical Characteristics T = 25°C unless otherwise noted
C
10000
1000
100
10
8
Ciss
VDD = 45V
VDD = 50V
VDD = 55V
Coss
6
Crss
4
2
f = 1MHz
VGS = 0V
10
0.1
0
1
10
100
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
100
PACKAGE MAY LIMIT
CURRENT IN THIS REGION
80
V =10V
GS
60
40
20
0
TJ = 25oC
10
V
=8V
GS
TJ = 150oC
1
10-3
10-2
10-1
100
101
102
103
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
105
500
o
T
= 25 C
10us
C
VGS = 10V
FOR TEMPERATURES
100
10
1
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
104
103
102
175 – T
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(ON)
c
I = I
25
----------------------
100us
150
1ms
SINGLE PULSE
10ms
DC
SINGLE PULSE
TJ=MAX RATED
Tc=25oC
0.1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
200
100
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
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©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
Typical Characteristics T = 25°C unless otherwise noted
C
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
SINGLE PULSE
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z x R + T
θJc θJc c
J
DM
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
5
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©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
Mechanical Dimensions
TO-220 3L
Figure 14. TO-220, Molded, 3Lead, Jedec Variation AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimension in Millimeters
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
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©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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