FDP42AN15A0 [ONSEMI]
N 沟道，Power Trench® MOSFET，150V，35A，42mΩ;
| 型号： | FDP42AN15A0 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，150V，35A，42mΩ 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：486K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB42AN15A0-F085
®
N-Channel Power Trench MOSFET
150V, 35A, 42mΩ
D
D
Features
Typ r
= 30mΩ at V = 10V, I = 12A
GS D
DS(on)
Typ Q
= 78nC at V = 10V, I = 12A
GS D
g(tot)
G
UIS Capability
RoHS Compliant
Qualified to AEC Q101
G
S
TO-263
S
Applications
FDB SERIES
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Integrated Starter/alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
150
V
V
VGS
±20
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
35
ID
A
See Figure4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
78
150
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate above 25oC
1.0
TJ, TSTG Operating and Storage Temperature
-55 to + 175
1.0
RθJC
RθJA
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
43
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB42AN15A0
FDB42AN15A0-F085 D2-PAK(TO-263)
330mm
24mm
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 0.2mH, I = 28A, V = 100V during inductor charging and V = 0V during time in avalanche
J
AS
DD
DD
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
2
presented here is based on mounting on a 1 in pad of 2oz copper.
Publication Order Number:
FDB42AN15A0-F085/D
©2013 Semiconductor Components Industries, LLC.
September-2017,Rev.3
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
150
-
-
-
-
-
1
V
V
DS=150V, TJ = 25oC
-
-
-
μA
mA
nA
VGS = 0V
TJ = 175oC(Note 4)
1
IGSS
VGS = ±20V
±100
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2.0
3.0
36
89
4.0
42
V
TJ = 25oC
-
-
mΩ
mΩ
ID = 12A,
TJ = 175oC(Note 4)
104
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
2040
216
48
-
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
1
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
VGS = 0 to 2V
30
36
4.5
-
nC
nC
nC
nC
VDD = 75V
ID = 12A
3.7
9
Qgd
6.5
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
30
-
ns
ns
ns
ns
ns
ns
15
11
22
3
-
V
V
DD = 75V, ID = 12A,
GS = 10V, RGEN = 7.5Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
-
29
Drain-Source Diode Characteristics
I
SD = 12A, VGS = 0V
-
-
-
-
-
-
1.25
1.2
V
VSD
Source to Drain Diode Voltage
ISD = 6A, VGS = 0V
V
Trr
Reverse Recovery Time
67
193
72
ns
nC
IF = 12A, dISD/dt = 100A/μs,
VDD=120V
Qrr
Reverse Recovery Charge
222
Notes:
4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
www.onsemi.com
2
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
30
20
10
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
CURRENT LIMITED
BY SILICON
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
SINGLE PULSE
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10V
100
10
1
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
200
100
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
STARTING TJ = 25oC
100us
1ms
10
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
STARTING TJ = 150oC
1
SINGLE PULSE
T
= MAX RATED
J
10ms
100ms
o
T
C
= 25 C
1
0.1
0.001
0.01
0.1
1
10
1
10
100
500
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
50
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
40
30
20
10
0
VDD = 15V
10
TJ = 175 o
C
TJ = 25 oC
TJ = 175oC
1
0.1
TJ = -55oC
TJ = 25oC
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
80
60
40
20
0
50
VGS
15V Top
10V
8V
7V
6V
VGS
15V Top
10V
8V
7V
6V
40
5.5V
5V Bottom
30
5.5V
5V Bottom
5V
20
5V
10
0
80μs PULSE WIDTH
Tj=175oC
80μs PULSE WIDTH
Tj=25oC
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
Typical Characteristics
200
2.8
2.4
2.0
1.6
1.2
0.8
0.4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 12A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
160
120
80
TJ = 175oC
TJ = 25oC
40
ID = 12A
VGS = 10V
0
2
4
6
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
Figure 12. Normalized Rdson vs Junction
Temperature
1.4
1.2
VGS = VDS
ID = 250uA
I
= 250μA
D
1.2
1.0
0.8
0.6
0.4
1.1
1.0
0.9
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 12A
VDD = 60V
Ciss
8
1000
VDD = 75V
VDD = 90V
Coss
Crss
6
100
4
2
0
10
f = 1MHz
VGS = 0V
1
0.1
1
10
100
0
5
10
15
20
25
30
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
Figure 16. Gate Charge vs Gate to Source
Voltage
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
FDP42AN15A0_NL
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
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