FDP52N20 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，200V，52A，49mΩ，TO-220;
| 型号： | FDP52N20 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，200V，52A，49mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDP52N20
N‐Channel UniFET MOSFET
200 V, 52 A, 49 mW
Description
UniFET MOSFET is ON Semiconductor’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET
is tailored to reduce on−state resistance, and to provide better
switching performance and higher avalanche energy strength. This
device family is suitable for switching power converter applications
such as power factor correction (PFC), flat panel display (FPD) TV
power, ATX and electronic lamp ballasts.
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Features
G
D
• R
= 41 mW (Typ.) @ V = 10 V, I = 26 A
GS D
S
DS(on)
TO−220
CASE 340AT
• Low Gate Charge (Typ. 49 nC)
• Low C (Typ. 66 pF)
RSS
• 100% Avalanche Tested
D
• These Devices are Pb−Free and are RoHS Compliant
Applications
• PDP TV
G
• Lighting
• Uninterruptible Power Supply
• AC−DC Power Supply
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2018 − Rev. 3
FDP52N20/D
FDP52N20
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
200
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DSS
GSS
V
30
V
I
D
Continuous (T = 25°C)
52
A
C
Continuous (T = 100°C)
33
C
I
I
Drain Current
Pulsed (Note 1)
208
A
mJ
A
DM
E
AS
AR
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
2520
52
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
35.7
4.5
mJ
V/ns
W
AR
dv/dt
P
(T = 25°C)
C
357
D
Derate Above 25°C
2.86
−55 to +150
300
W/°C
°C
T , T
Operating and Storage Temperature Range
J
STG
T
L
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.4 mH, I = 52 A, V = 50 V, R = 25 W, starting T = 25°C.
AS
DD
G
DSS
J
3. I ≤ 52 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C.
J
SD
DD
4. Essentially independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.35
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
R
62.5
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FDP52N20
FDP52N20
TO−220
Tube
N/A
50 Units
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2
FDP52N20
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = 250 mA, T = 25_C
200
−
−
−
V
DSS
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25_C
−
0.2
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 200 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 160 V, T = 125_C
10
100
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 mA
3.0
−
−
5.0
0.049
−
V
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 26 A
0.041
35
D
g
FS
= 40 V, I = 26 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
2230
540
66
2900
700
100
63
pF
pF
pF
nC
nC
nC
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
rss
Q
V
DS
= 160 V, I = 52 A, V = 10 V
49
g(tot)
D
GS
(Note 5)
Q
19
−
gs
Q
24
−
gd
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 100 V, I = 20 A,
−
−
−
−
53
175
48
115
359
107
68
ns
ns
ns
ns
d(on)
DD
G
D
R
= 25 W (Note 5)
t
r
t
d(off)
t
f
29
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
52
204
1.5
A
A
V
S
I
SM
V
SD
Drain to Source Diode Forward
Voltage
V
GS
= 0 V, I = 52 A
SD
t
Reverse Recovery Time
V
= 0 V, I = 52 A,
−
−
162
1.3
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
FDP52N20
TYPICAL PERFORMANCE CHARACTERISTICS
V GS
Top :
15.0 V
10.0 V
2
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom:
1
10
150°C
1
10
25°C
−55°C
0
10
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
* Notes :
1. 250 μ s Pulse Test
2. TC = 25°C
−1
10
0
10
−1
0
10
1
10
2
4
6
8
10
12
10
VDS, Drain−Source Voltage [V]
V , Gate−Source Voltage [V]
GS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.10
0.08
0.06
0.04
2
10
VGS= 10V
1
10
150°C
°C
25
VGS= 20V
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.02
0.00
* Note : T = 25°C
J
100
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID , Drain Current [A]
VSD, Source−Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
6000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
V
DS = 40V
DS = 100V
VDS = 160V
5000
4000
3000
2000
1000
0
C
rss = C
10
8
gd
V
C
oss
C
iss
6
4
* Note ;
1. VGS = 0 V
C
2. f = 1 MHz
rss
2
* Note : ID = 52A
50
0
−1
0
10
1
10
0
10
20
30
40
60
10
QG , Total Gate Charge [nC]
VDS , Drain−Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FDP52N20
TYPICAL PERFORMANCE CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
* Notes :
1. VGS= 0 V
* Notes :
1. VGS = 10 V
0.5
0.0
2. ID = 250μA
2. ID = 26 A
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150 200
°C]
T , Junction Temperature [
°C]
T , Junction Temperature [
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
3
60
50
40
30
20
10
0
10
10 μs
2
10
100 μs
1 ms
10 ms
100 ms
DC
1
10
Operation in This Area
is Limited by RDS(on)
0
10
* Notes:
1. T = 25°C
C
−1
10
2. T = 150°C
J
3. Single Pulse
−2
10
25
50
75
100
125
150
0
2
10
10
101
, Case Temperature [°C]
TC
VDS , Drain−Source Voltage [V]
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
D=0.5
10−1
0.2
0.1
PDM
t1
0.05
0.02
t2
* Notes :
1. ZqJC (t) = 0.35 0C/W Max.
2. Duty Factor, D=t 1/t2
10−2
0.01
3. TJM − TC = P DM * Z qJC (t)
single pulse
5−
4−
2−
1−
10
10
10−3
10
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
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5
FDP52N20
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FDP52N20
+
DUT
VDS
_
ISD
L
Driver
RG
Same Type
as DUT
VDD
VGS
Sdv/dt controlled by R G
SISD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
( Driver )
D =
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
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