FDP4D5N10C [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ;
| 型号： | FDP4D5N10C |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ 栅 |
| 文件： | 总8页 (文件大小：1018K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FDP4D5N10C / FDPF4D5N10C
N-Channel Shielded Gate PowerTrench MOSFET
100 V, 128 A, 4.5 mΩ
®
Features
General Description
This N-Channel MV MOSFET is produced using ON
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized to minimize on-state resistance and yet maintain
superior switching performance with best in class soft body
diode.
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 100 A
Extremely Low Reverse Recovery Charge, Qrr
100% UIL Tested
RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
D
G
G
G
D
S
D
S
S
TO-220
TO-220F
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Ratings
Symbol
Parameter
Units
FDP4D5N10C
FDPF4D5N10C
VDS
VGS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
100
±20
128*
91
100
±20
128*
91
V
V
TC = 25°C
(Note 3)
(Note 3)
(Note 1)
(Note 2)
ID
-Continuous
-Pulsed
TC = 100°C
A
512
512
EAS
Single Pulse Avalanche Energy
Power Dissipation
486
mJ
W
TC = 25°C
TA = 25°C
150
2.4
37.5
2.4
PD
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
-55 to +175
°C
* Drain current limited by maximum junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FDP4D5N10C
FDPF4D5N10C
Units
1.0
4.0
°C/W
62.5
62.5
Package Marking and Ordering Information
Device Marking
FDP4D5N10C
FDPF4D5N10C
Device
Package
TO-220
Packing Mode
Tube
Quantity
FDP4D5N10C
FDPF4D5N10C
50 units
50 units
TO-220F
Tube
Semiconductor Components Industries, LLC, 2017
June, 2017, Rev. 1.0
Publication Order Number:
FDP4D5N10C / FDPF4D5N10C/D
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
53
mV/°C
V
DS = 80 V, VGS = 0 V
1
μA
μA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, TJ= 150°C
VGS = ±20 V, VDS = 0 V
500
±100
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 310 μA
VGS = 10 V, ID = 100 A
VDS = 5 V, ID = 100 A
2.0
3.2
4.0
134
4.0
4.5
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
3615
2330
18
5065
3265
35
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
1.1
2.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
29
49
41
13
48
19
9
47
79
66
24
68
ns
ns
VDD = 50 V, ID = 100 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Output Charge
VGS = 0 V to 10 V
nC
nC
nC
nC
VDD = 50 V,
D = 100 A
Qgs
Qgd
Qoss
I
VDD = 50 V, VGS = 0 V
150
Drain-Source Diode Characteristic
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
128
512
1.3
A
A
ISM
VSD
trr
-
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 100 A
GS = 0 V, VDD = 50 V,
IF = 100 A, dIF/dt = 100 A/μs
GS = 0 V, VDD = 50 V,
IF = 100 A, dIF/dt = 300 A/μs
1.0
82
106
71
258
V
132
170
114
413
ns
nC
ns
nC
V
Qrr
trr
Reverse Recovery Charge
Reverse Recovery Time
V
Qrr
Reverse Recovery Charge
Notes:
1. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
2. E of 486 mJ is based on starting T = 25 °C, L = 3 mH, I = 18 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 58 A.
AS
J
AS
DD
GS
AS
3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
300
5
4
3
2
1
0
VGS = 10 V
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
240
VGS = 5.5 V
VGS = 7 V
VGS = 6 V
180
VGS = 6 V
VGS = 7 V
VGS = 5.5 V
VGS = 5 V
120
60
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
60
120
180
240
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
2.2
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 100 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
32
24
16
8
ID = 100 A
TJ = 150 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150 175
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
300
300
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
240
180
120
60
VDS = 5 V
10
TJ = 175 o
C
1
TJ = 175 o
C
TJ = 25 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
7
0
2
3
4
5
6
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
100
10
Ciss
ID = 100 A
VDD = 25 V
8
Coss
VDD = 50 V
VDD = 75 V
6
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
1
0
10
20
30
40
50
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
100
10
1
160
120
80
40
0
RθJC = 1.0 oC/W
TJ = 25 o
C
VGS = 10 V
TJ = 125 o
C
TJ = 150 o
C
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
1000
10 μs
10 μs
100
10
1
THIS AREA IS
LIMITED BY rDS(on)
THIS AREA IS
LIMITED BY rDS(on)
100 μs
100 μs
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.0 oC/W
SINGLE PULSE
TJ = MAX RATED
RθJC = 4.0 oC/W
T
C = 25 oC
1 ms
1 ms
1
10 ms
10 ms
CURVE BENT TO
MEASURED DATA
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
100 ms
100 ms
0.1
0.1
0.1
0.1
1
10
100 400
1
10
100 400
VDS, DRAIN to SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area for FDP4D5N10C
Figure12. Forward Bias Safe
Operating Area for FDPF4D5N10C
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
100000
100000
10000
1000
100
SINGLE PULSE
RθJC = 1.0 oC/W
SINGLE PULSE
RθJC = 4.0 oC/W
T
C = 25 oC
T
C = 25 oC
10000
1000
100
10
10
10-5
10-4
10-3
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
t, PULSE WIDTH (sec)
t, PULSE WIDTH (sec)
Figure13. Single Pulse Maximum
Power Dissipation for FDP4D5N10C
Figure14. Single Pulse Maximum
Power Dissipation for FDPF4D5N10C
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.0 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 15. Junction-to-Case Transient Thermal Response Curve for FDP4D5N10C
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
P
0.2
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
θJC
θJC
o
R
= 4.0 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
SINGLE PULSE
10-4
0.001
10-5
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 16. Junction-to-Case Transient Thermal Response Curve for FDPF4D5N10C
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5
Dimensional Outline and Pad Layout
TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
6
Dimensional Outline and Pad Layout
TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
7
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