FDP5500-F085 [ONSEMI]
N 沟道，UltraFET 功率 MOSFET，55V，80A，7mΩ;
| 型号： | FDP5500-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET 功率 MOSFET，55V，80A，7mΩ 局域网 开关 晶体管 |
| 文件： | 总8页 (文件大小：727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDP5500-F085
N-Channel UltraFET Power MOSFET
55V, 80A, 7mΩ
Applications
Features
Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 114nC at VGS = 10V
Simulation Models
-Temperature Compensated PSPICE and SABERTM
Models
DC Linear Mode Control
Solenoid and Motor Control
Switching Regulators
Automotive Systems
Peak Current vs Pulse Width Curve
UIS Rating Curve
Qualified to AEC Q101
RoHS Compliant
Package
Symbol
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
S
©2009 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Publication Order Number:
FDP5500-F085/D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
(Note 1)
(Note 1)
55
V
V
V
VDGR
VGS
Drain to Gate Voltage (RGS = 20kΩ)
Gate to Source Voltage
55
±20
Drain Current Continuous (TC < 135oC, VGS = 10V)
80
ID
A
Pulsed
See Figure 4
860
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
(Note 2)
mJ
W
W/oC
375
2.5
TJ, TSTG Operating and Storage Temperature
-55 to + 175
300
TL
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
Max. Package Temp. for Soldering (Package Body for 10sec)
oC
Tpkg
260
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220AB, 1in2 copper pad area
0.4
62
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
N/A
Quantity
FDP5500
FDP5500-F085
TO-220AB
Tube
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
55
-
-
-
-
-
-
1
V
V
DS = 50V, VGS = 0V
µA
nA
VDS = 45V
TC = 150oC
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
-
2.8
5.1
4
7
V
ID = 80A, VGS= 10V
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
3565
1310
395
207
114
6.6
-
pF
pF
pF
nC
nC
nC
nC
nC
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Output Capacitance
-
-
Crss
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
VGS = 0 to 20V
269
148
8.6
-
VDD = 30V
VGS = 0 to 10V
VGS = 0 to 2V
ID = 80A
RL = 0.4Ω
Ig = 1.0mA
17.2
52
Qgd
-
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2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
75
-
ns
ns
ns
ns
ns
ns
12
34
37
23
-
VDD = 30V, ID = 80A,
RL = 0.4Ω, VGS = 10V,
-
td(off)
tf
Turn-Off Delay Time
Fall Time
-
RGS = 2.5Ω
-
toff
Turn-Off Time
96
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = 80A
-
-
-
0.9
58
71
1.25
75
V
ns
nC
IF = 80A, dISD/dt = 100A/µs
Qrr
Reverse Recovery Charge
92
Notes:
o
o
1: Starting T = 25 C to175 C.
2: Starting T = 25 C, L = 0.42mH, I = 64A
J
o
J
AS
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3
Typical Characteristics
160
120
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
40 CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
oC
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE
(
)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
P
DM
0.10
0.05
0.02
t
1
0.1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
SINGLE PULSE
10-4
0.01
10-5
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
1000
100
10
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
100us
1ms
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
100
10
AS
DSS DD
STARTING TJ = 25oC
LIMITED
BY PACKAGE
10ms
DC
STARTING TJ = 150oC
1
OPERATION IN THIS SINGLE PULSE
AREA MAY BE
LIMITED BY r
T
= MAX RATED
J
o
DS(on)
T
C
= 25 C
1
0.01
0.1
0.1
1
10
100
1000 5000
1
10
100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DD = 5V
µs
VGS = 10V
VGS = 6V
V
120
80
40
0
120
80
40
0
VGS = 5.5V
TJ = 175oC
VGS = 5V
TJ = -55oC
TJ = 25oC
VGS = 4.5V
0
1
2
3
4
5
0
1
2
3
4
5
6
7
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D = 80A
TJ = 175oC
ID = 80A
TJ = 25oC
VGS = 10V
-80
-40
0
40
80
120
160
200
4
6
8
10
TJ, JUNCTION TEMPERATURE
(
oC
)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.2
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS
ID
=
VDS
ID = 1mA
=
250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
oC
200
-80
-40
0
40
80
120
160
oC
200
TJ, JUNCTION TEMPERATURE
(
)
TJ, JUNCTION TEMPERATURE
(
)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
10000
ID = 80A
8
6
4
2
0
VDD = 30V
VDD = 40V
VDD = 20V
Ciss
1000
Coss
f = 1MHz
VGS = 0V
Crss
100
0.1
0
20
40
60
80
100
120
140
1
10
80
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE
(V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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