FDP55N06 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，60 V，55 A，22mΩ，TO-220;
| 型号： | FDP55N06 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，60 V，55 A，22mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
D
MOSFET – N-Channel,
UniFETt
60ꢀV, 55 A, 22 mW
G
FDP55N06 / FDPF55N06
S
Description
UniFET MOSFET is onsemi's high voltage MOSFET family based
on planar stripe and DMOS technology. This MOSFET is tailored to
reduce on−state resistance, and to provide better switching
performance and higher avalanche energy strength. This device family
is suitable for switching power converter applications such as power
factor correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
G
D
G
S
D
S
TO−220 Fullpack, 3−Lead
/ TO−220F−3SG
TO−220−3LD
CASE 340AT
CASE 221AT
Features
• R
= 22 mW (Typ.) @ V = 10 V, I = 27.5 A
GS D
• Low Gate Charge (Typ. 30 nC)
DS(on)
MARKING DIAGRAM
• Low C (Typ. 60 pF)
• 100% Avalanche Tested
rss
&Z&3&K
FDPF
&Z&3&K
FDP
55N06
55N06
FDP55N06,
FDPF55N06 = Specific Device Code
&Z
&3
&K
= Assembly Location
= Date Code (Year and Week)
= Lot Code
ORDERING INFORMATION
Device
Package
Shipping
FDP55N06
TO−220
50 Units / Tube
TO−220F
FDPF55N06
50 Units / Tube
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
July, 2023 − Rev. 3
FDPF55N06/D
FDP55N06 / FDPF55N06
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
FDP55N06
FDPF55N06
Unit
V
V
DSS
Drain to Source Voltage
60
60
I
D
Drain Current −
− Continuous (T = 25°C)
55
34.8
55*
34.8*
A
C
− Continuous (T = 100°C)
C
I
Drain Current
− Pulsed (Note 1)
220
25
220*
25
A
V
DM
V
GSS
Gate−Source Voltage
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
480
55
480
55
mJ
A
AS
AR
I
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
11.4
4.5
11.4
4.5
mJ
V/ns
AR
dv/dt
P
(T = 25°C)
− Derate Above 25°C
114
0.9
48
0.4
W
W/°C
D
C
T , T
Operating and Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
J
STG
T
L
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Second
300
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L = 5.6 mH, I = 55 A, V = 50 V, R = 25 Ω, Starting T = 25°C
AS
DD
G
DSS
J
3. I ≤ 55 A, di/dt ≤ 200 A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
FDP55N06
1.1
FDL100N50F
Unit
°C/W
°C/W
°C/W
RθJC
RθJS
RθJA
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−sink, Typ.
Thermal Resistance, Junction−to−Ambient, Max.
2.58
−
0.5
62.5
62.5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
60
−
−
−
V
DSS
D
GS
ΔBV
/ ΔT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
0.05
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 60 V, V = 0 V
−
−
−
−
−
−
−
−
1
μA
DSS
GS
= 48 V, T = 150°C
10
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 20 V, V = 0 V
100
−100
nA
nA
GSSF
DS
I
= −20 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 mA
2.0
−
−
4.0
0.022
−
V
Ω
S
GS(th)
DS(on)
GS D
R
Static Drain−Source On Resistance
Forward Transconductance
= 10 V, I = 27.5 A
0.018
33
D
g
FS
= 25 V, I = 27.5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
1160
375
60
1510
490
90
pF
pF
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
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2
FDP55N06 / FDPF55N06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
t
t
Turn−On Delay Time
Turn−On Rise Time
V
= 30 V, I = 55 A,
−
−
−
−
−
−
−
30
130
70
65
265
150
195
37
ns
ns
d(on)
DD
G
D
R
= 25 W
t
r
(Note 4)
Turn−Off Delay Time
Turn−Off Fall Time
ns
d(off)
t
f
95
ns
Q
Total Gate Charge at 10V
Gate−Source Gate Charge
Gate−Drain Charge
V
DD
V
GS
= 48 V, I = 55 A,
30
nC
nC
nC
g(tot)
D
= 10 V
Q
6.5
7.5
−
gs
gd
(Note 4)
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain−Source Diode Forward Current
−
−
−
−
−
−
−
55
220
1.4
−
A
A
S
I
Maximum Pulsed Drain to Source Diode Forward Current
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 55 A
−
V
GS
SD
t
rr
= 0 V, I = 55 A
40
55
ns
mC
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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3
FDP55N06 / FDPF55N06
TYPICAL CHARACTERISTICS
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
2
10
2
10
1
10
10
Bottom: 4.5 V
1
10
150°C
*Notes:
*Notes:
1. 250 ms Pulse Test
2. T = 25°C
−55°C
25°C
1. V = 30 V
DS
2. 250 ms Pulse Test
C
0
0
10
−1
0
1
6
8
10
4
2
10
10
, DRAIN−SOURCE VOLTAGE (V)
10
V
DS
V
GS
, GATE−SOURCE VOLTAGE (A)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.05
0.04
2
10
150°C
25°C
1
0.03
0.02
10
10
V
GS
= 10 V
V
= 20 V
GS
*Notes:
1. V = 0 V
GS
*Notes: T = 25°C
2. 250 ms Pulse Test
J
0
0
25
50
75
100
125 150 175 200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
V
SD
, SOURCE−DRAIN VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
2500
2000
1500
12
C
C
C
C
= C + C ( C
gs gd ds = shorted)
oss
iss
= C + C
oss
rss
ds
gd
10
8
= C
gd
C
iss
V
DS
= 30 V
V
DS
= 48 V
6
4
2
*Notes:
1. V = 0 V
2. f = 1 MHz
GS
1000
500
C
rss
*Notes: I = 55 A
D
0
0
−1
0
1
10
10
10
25
30
20
Q , TOTAL GATE CHARGE (nC)
0
5
10
15
V
SD
, DRAIN−SOURCE VOLTAGE (V)
g
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FDP55N06 / FDPF55N06
TYPICAL CHARACTERISTICS (continued)
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
*Notes:
*Notes:
0.5
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 27.5 A
2. I = 250 ms
D
D
0.0
−100
200
200
−50
−100
−50
0
50
100
0
150
150
100
50
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
1000
100
1000
100
10 ms
10 ms
100 ms
100 ms
1 ms
1 ms
10
1
10
1
Operation in This Area is
10 ms
Operation in This Area is
Limited by R
10 ms
Limited by R
DS(on)
DS(on)
100 ms
100 ms
T
C
= 25°C
T = 25°C
C
T = 150°C
J
1 s
1 s
T = 150°C
J
Single Pulse
Single Pulse
0.1
0.1
100
100
1
10
, DRAIN−SOURCE VOLTAGE (V)
1
10
, DRAIN−SOURCE VOLTAGE (V)
V
DS
V
DS
Figure 9−1. Maximum Safe Operating Area
Figure 9−2. Maximum Safe Operating Area for
for FDP55N06
FDPF55N06
60
50
40
30
20
10
0
25
50
75
100
150
125
T , CASE TEMPERATURE (°C)
C
Figure 10. Maximum Drain Current vs. Case
Temperature
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5
FDP55N06 / FDPF55N06
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
0
10
D = 0.5
0.2
0.1
−1
10
10
0.05
0.02
Note:
(t) = 1.1°C/W Max.
0.01
Single Pulse
Z
q
JC
Duty Factor, D = t / t
1
2
−2
T
JM
− T = P
× Z (t)
q
DM JC
C
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
T , Square Wave Pulse Duration (s)
1
Figure 11−1. Transient Thermal Response Curve for FDP55N06
0
10
D = 0.5
0.2
0.1
0.05
−1
10
0.02
Note:
(t) = 2.58°C/W Max.
0.01
Z
q
JC
Duty Factor, D = t / t
1
2
−2
10
T
JM
− T = P
× Z (t)
q
JC
C
DM
Single Pulse
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
T , Square Wave Pulse Duration (s)
1
Figure 11−2. Transient Thermal Response Curve for FDPF55N06
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6
FDP55N06 / FDPF55N06
V
GS
Same Type
as DUT
W
50 K
Q
g
12 V
300 nF
200 nF
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
d(on)
t
r
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
V
DS
(t)
DUT
V
DD
V
GS
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FDP55N06 / FDPF55N06
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
Body Diode Recovery dv/dt
(DUT)
V
DD
V
SD
Body Diode
Forward Voltage Drop
Figure 15. Peak Recovery dv/dt Test Circuit & Waveforms
UniFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 3−Lead / TO−220F−3SG
CASE 221AT
ISSUE B
DATE 19 JAN 2021
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67439E
TO−220 FULLPACK, 3−LEAD / TO−220F−3SG
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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