FDP8860 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，80A，2.5mΩ;
| 型号： | FDP8860 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，80A，2.5mΩ 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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September 2006
FDP8860
N-Channel PowerTrench® MOSFET
tm
30V, 80A, 2.5mΩ
Features
General Description
Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A
Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A
Low Miller Charge
This N-Channel MOSFET has been designed specifically
to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Low Qrr Body Diode
UIL Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Application
DC - DC Conversion
Start / Alternator Sytems
D
G
G
TO-220
FDP Series
D
S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Pulsed
TC = 25°C
TC = 25°C
80
ID
219
A
(Note 1)
(Note 2)
556
EAS
Single Pulse Avalanche Energy
Power Dissipation
673
mJ
W
PD
254
TJ, TSTG
Operating and Storage Temperature
-55 to +175
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case TO220
Thermal Resistance, Junction to Ambient TO220
0.59
62
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tube
Tape Width
N/A
Quantity
FDP8860
FDP8860
TO220AB
50 units
1
©2006 Fairchild Semiconductor Corporation
FDP8860 Rev.B
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 1mA, referenced to 25°C
VDS = 24V,
22
mV/°C
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
VGS = 0V
TJ = 150°C
250
±100
VGS = ±20V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1
1.6
2.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-9.6
mV/°C
VGS = 10V, ID = 80A
1.9
2.0
2.1
2.9
3.4
2.5
2.8
2.9
3.8
VGS = 5V, ID = 80A
rDS(on)
Drain to Source On Resistance
mΩ
VGS = 4.5V, ID = 80A
VGS = 10V, ID = 80A, TJ = 150°C
VDS = 10V, ID = 80A
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
9200
1700
1060
1.7
12240
2260
1590
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
35
135
64
56
216
103
95
ns
ns
VDD = 15V, ID = 80A
VGS = 5V, RGEN = 3Ω
Turn-Off Delay Time
Fall Time
ns
59
ns
Qg(TOT)
Qg(5)
Qgs
Qgd
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
158
81
222
114
nC
nC
nC
nC
VDD = 15V
ID = 80A
VGS = 0V to 5V
27
33
Drain-Source Diode Characteristics
VGS = 0V, IS = 80A
VGS = 0V, IS = 40A
0.88
0.81
60
1.25
1.2
90
VSD
Source to Drain Diode Forward Voltage
V
trr
Reverse Recovery Time
ns
IF = 80A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
74
111
nC
Notes:
1: Pulse Test: Pulse Width < 80µs, Duty cycle < 0.5%.
o
2: Starting T =25 C, L= 0.3mH, I = 67A,V = 27V, V = 10V.
J
AS
DD
GS
www.fairchildsemi.com
2
FDP8860 Rev.B
Typical Characteristics TJ = 25°C unless otherwise noted
320
4
3
2
1
0
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
DUTY CYCLE = 0.5%MAX
V
= 4V
VGS = 3V
GS
240
160
80
V
= 4.5V
= 10V
GS
VGS = 3.5V
V
GS
VGS = 4V
V
= 3.5V
GS
VGS = 4.5V
VGS = 10V
V
=3V
GS
0
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
0
80
160
240
320
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.7
10
I
= 80A
D
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
I
= 50A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
D
V
= 10V
GS
8
6
4
2
0
T = 175oC
J
T
J
= 25oC
-75 -50 -25
0
25 50 75 100 125 150 175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
160
300
100
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T = 175oC
J
V
= 5V
DD
120
80
40
0
10
1
T = 175oC
J
T
J
= 25oC
0.1
T
= 25oC
J
0.01
T
J
= -55oC
T
J
= - 55oC
3.5
1E-3
0.0
0.3
0.6
0.9
1.2
1.0
1.5
2.0
2.5
3.0
4.0
V , BODY DIODE FORWARD VOLTAGE (V)
SD
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
FDP8860 Rev.B
Typical Characteristics TJ = 25°C unless otherwise noted
10
20000
10000
f = 1MHz
V = 0V
GS
V
= 12V
DD
8
6
4
2
0
C
iss
V
DD
= 15V
C
oss
V
DD
= 18V
C
rss
1000
500
0
40
80
120
160
0.1
1
10
40
Q , GATE CHARGE(nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
200
100
280
240
200
160
120
80
V =10V
GS
TJ = 25oC
V =4.5V
GS
10
TJ = 175oC
Limited by Package
40
R
θJC
= 0.59oC/W
1
0
25
10-3 10-2
10-1
100
101
102
103
104
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
105
2000
1000
FOR TEMPERATURES
VGS = 10V
10us
o
ABOVE 25 C DERATE PEAK
100us
CURRENT AS FOLLOWS:
104
100
10
1
175 – T
C
I = I
----------------------
25
125
LIMITED BY
PACKAGE
o
T
= 25 C
C
103
102
1ms
10ms
DC
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
= MAX RATED
= 25OC
J
SINGLE PULSE
T
C
0.1
1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
50
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
4
FDP8860 Rev.B
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
www.fairchildsemi.com
5
FDP8860 Rev.B
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Rev. I20
FDP8860 Rev. B
6
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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相关型号：
FDP8870_F085
Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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