FDPF390N15A [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，15A，40mΩ;
| 型号： | FDPF390N15A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，15A，40mΩ |
| 文件： | 总10页 (文件大小：1002K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2013
FDPF390N15A
N-Channel PowerTrench® MOSFET
150 V, 15 A, 40 mΩ
Features
Description
•
•
•
•
RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been tailored to minimize the on-state resistance while
maintain-ing superior switching performance.
Fast Switching Speed
Low Gate Charge, QG = 14.3 nC (Typ.)
High Performance Trench Technology for Extremely Low
RDS(on)
Applications
•
•
•
•
•
Consumer Appliances
•
•
High Power and Current Handling Capability
RoHS Compliant
LED TV
Synchronous Rectification
Uninterruptible Power Supply
Motor Solar Inverter
D
G
G
D
S
TO-220F
S
T
C
= 25°C unless otherwise noted.
Absolute Maximum Ratings
Symbol
VDSS
VGSS
Parameter
FDPF390N15A
Unit
V
Drain to Source Voltage
Gate to Source Voltage
150
±20
V
- Continuous (TC = 25oC,Silicon Limited)
- Continuous (TC = 100oC,Silicon Limited)
15
ID
Drain Current
Drain Current
A
10
IDM
- Pulsed
(Note 1)
60
78
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
22
PD
Power Dissipation
0.18
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +175
300
oC
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds.
Thermal Characteristics
Symbol
Parameter
Unit
FDPF390N15A
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
5.7
oC/W
62.5
www.fairchildsemi.com
1
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF390N15A
TO-220F
Tube
N/A
N/A
50 units
FDPF390N15A
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
150
-
-
-
-
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
0.1
V/oC
ID = 250 µA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µA
500
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 µA
VGS = 10 V, ID = 15A
VDS = 10 V, ID = 15 A
2.0
-
4.0
40
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
31
32
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
965
96
1285
pF
pF
pF
pF
nC
nC
nC
nC
Ω
VDS = 75 V, VGS = 0 V
f = 1 MHz
Coss
Crss
Output Capacitance
130
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
5.8
169
14.3
5.0
2.0
3.5
1.4
-
Coss(er)
Qg(tot)
Qgs
VDS = 75 V,VGS = 0 V
-
-
18.6
VDS = 75 V,ID = 27 A
VGS = 10 V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
-
-
-
-
Qgs2
Qgd
-
-
-
(Note 4)
ESR
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
14
10
20
5
38
30
50
20
ns
ns
ns
ns
VDD = 75 V, ID = 27 A
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
15
64
1.25
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 15 A
-
V
63
131
ns
nC
VGS = 0 V, ISD = 27 A
dIF/dt = 100 A/µs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting T = 25°C, L = 3 mH, I = 7.2 A
J
SD
3. I ≤ 15 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
2
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
VGS = 15.0V
*Notes:
1. VDS = 10V
10.0V
100
100
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
2. 250ꢀs Pulse Test
10
10
25oC
150oC
-55oC
*Notes:
1. 250ꢀs Pulse Test
2. TC = 25oC
1
1
0.1
1
5
2
3
4
5
6
7
8
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
80
60
40
20
200
100
VGS = 10V
25oC
150oC
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250ꢀs Pulse Test
1
0.4
0
20
40
60
80
100
0.6
0.8
1.0
1.2 1.3
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
10
1000
Ciss
VDS = 30V
VDS = 75V
8
VDS = 120V
100
6
Coss
*Note:
1. VGS = 0V
4
2
10
2. f = 1MHz
Crss
C
iss
= C + C (C = shorted)
gs gd ds
C
oss
= C + C
ds
gd
C
rss
= C
gd
*Note: ID = 27A
12
1
0
0.1
1
10
100 200
0
4
8
16
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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3
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.10
1.08
2.6
2.4
2.0
1.6
1.2
1.04
1.00
0.96
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.8
2. ID = 250ꢀA
2. ID = 15A
0.92
0.4
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
300
100
16
VGS= 10V
100ꢀs
10
12
8
1ms
10ms
100ms
1
Operation in This Area
DC
is Limited by R DS(on)
0.1
*Notes:
1. TC = 25oC
4
0.01
2. TJ = 150oC
3. Single Pulse
0.001
R
θJC =5.7oC/W
0
1
10
100 200
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Volatage
Figure 12. Unclamped Inductive
Switching Capability
1.2
1.0
0.8
0.6
0.4
0.2
0.0
12
If R = 0
10
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0
30
60
90
120
150
0.1
1
10 20
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
www.fairchildsemi.com
4
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
8
1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.1
*Notes:
1. ZθJC(t) = 5.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
10
100
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
5
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
G
= const.
Charge
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
VGS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VGS
VDD
VDS (t)
DUT
t p
t p
Time
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
6
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
7
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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