FDS6673BZ-F085 [ONSEMI]
P 沟道，PowerTrench® MOSFET，-30V，-14.5A，7.8mΩ;
| 型号： | FDS6673BZ-F085 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-30V，-14.5A，7.8mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：583K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6673BZ-F085
P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8mΩ
Features
General Description
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
This P-Channel MOSFET is produced using ON
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6.5kV typical (note 3)
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS compliant
Qualified to AEC Q101
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
-30
±25
V
V
A
A
(Note1a)
-14.5
-75
ID
Power Dissipation for Single Operation
(Note1a)
(Note1b)
(Note1c)
2.5
PD
1.2
W
1.0
TJ, TSTG
Operating and Storage Temperature
-55 to 150
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
50
25
°C/W
°C/W
Thermal Resistance , Junction to Case (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
12mm
Quantity
2500 units
FDS6673BZ
FDS6673BZ-F085
13’’
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
1
Publication Order Number:
FDS6673BZ-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25°C
-20
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -24V, VGS = 0V
VGS = ±25V, VDS = 0V
-1
µA
µA
±10
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-1.9
8.1
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to
25°C
mV/°C
V
GS = -10V , ID = -14.5A
6.5
9.6
7.8
12
VGS = -4.5V, ID = -12A
rDS(on)
Drain to Source On Resistance
mΩ
VGS = -10V, ID = -14.5A
TJ = 125oC
9.7
60
12
gFS
Forward Transconductance
VDS = -5V, ID = -14.5A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
3500
600
4700
800
pF
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
600
900
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
14
26
29
ns
ns
ns
ns
VDD = -15V, ID = -1A
16
V
GS = -10V, RGS = 6Ω
Turn-Off Delay Time
Fall Time
225
105
306
167
V
DS = -15V, VGS = -10V,
Qg
Total Gate Charge
88
124
65
nC
ID = -14.5A
Qg
Total Gate Charge
46
8
nC
nC
nC
VDS = -15V, VGS = -5V,
Qgs
Qgd
Gate to Source Gate Charge
Gate to Drain Charge
I
D = -14.5A
23.5
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
-0.7
-1.2
45
V
Reverse Recovery Time
Reverse Recovery Charge
IF = 14.5A, di/dt = 100A/µs
IF = 14.5A, di/dt = 100A/µs
ns
nC
Qrr
34
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
o
o
o
a) 50 C/W (10 sec)
when mounted on a 1 in
pad of 2 oz copper
b) 105 C/W when mounted
c) 125 C/W when mounted
2
2
on a .04 in pad of 2 oz
copper
on a minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
80
70
60
50
40
30
20
10
0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
VGS = -4V
VGS = -10V
VGS = -5V
VGS = -4V
VGS = -4.5V
VGS = -4.5V
VGS = -3.5V
VGS = -5V
VGS = -3V
VGS = -10V
10
20
30
40
50
60
70
80
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
25
1.5
ID = -14.5A
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = -7A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
15
10
5
TJ = 150oC
TJ = 25oC
0
2
4
6
8
10
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
80
1
00
10
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 0V
VDS = -6V
60
40
20
0
TJ = 150oC
TJ = 150oC
TJ = 25oC
TJ = 25oC
TJ = -55oC
0.1
0.01
1E-3
TJ = -55oC
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
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3
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
6000
Ciss
Coss
VDD = -10V
VDD = -15V
VDD = -20V
6
1000
Crss
4
2
f = 1MHz
VGS = 0V
0
100
0
20
40
60
80
100
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
1000
40
100
10
TJ = 150oC
10
1
TJ = 25oC
0.1
TJ = 25oC
TJ = 125oC
0.01
1E-3
1E-4
1
10-2
10-1
tAV, TIME IN AVALANCHE(ms)
100
101
102
103
0
5
10
15
20
25
30
35
-VGS(V)
Figure 9. Ig vs VGS
Figure 10. Unclamped Inductive Switching
Capability
100
16
12
8
100μs
10
1
1ms
VGS = -10V
10 ms
100 ms
1s
THIS AREA IS
LIMITED BY rDS(on)
VGS = -4.5V
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
0.1
4
10s
DC
T
C = 25oC
0.01
0
25
0.01
0.1
1
10
100
500
50
75
100
125
oC
150
-VDS, DRAIN to SOURCE VOLTAGE (V)
TA, AMBIENT TEMPERATURE
(
)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
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4
Typical Characteristics TJ = 25 °C unless otherwise noted
104
VGS = -10V
103
102
10
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
1
0.5
10-4
10-3
10-2
10-1
1
10
102
103
t, PULSE WIDTH (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
RθJA = 125oC/W
NOTES:
DUTY FACTOR: D = t /t
1E-3
1E-4
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
102
103
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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