FDS86242 [ONSEMI]
150V N沟道PowerTrench® MOSFET;
| 型号： | FDS86242 |
| 厂家： | 
ONSEMI |
| 描述： | 150V N沟道PowerTrench® MOSFET PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：455K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Sept 2017
FDS86242
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
General Description
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
This N -Channel MOSFET
is produ ced using ON
Semiconductor‘s advanced Power T rench® process that has
Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
been optimized for
ruggedness.
rDS(on), switching per formance and
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
100% UIL Tested
RoHS Compliant
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
150
±20
4.1
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
ID
A
20
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1)
40
mJ
W
TC = 25 °C
TA = 25 °C
5.0
Power Dissipation
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS86242
FDS86242
SO-8
13 ’’
2500 units
©2010 Semiconductor Components Industries, LLC.
FDS86242 Rev. 1
1
www.onsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperatur
Coefficient
I
D = 250 μA, referenced to 25 °C
104
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
3.5
-10
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 4.1 A
56.3
73.8
107
11
67
98
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 3.3 A
mΩ
VGS = 10 V, ID = 4.1 A, TJ = 125 °C
VDS = 10 V, ID = 4.1 A
126
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
570
64
760
85
5
pF
pF
pF
Ω
VDS = 75 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2.9
0.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7.9
1.5
13
16
10
23
10
13
7
ns
ns
V
DD = 75 V, ID = 4.1 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
2.8
8.9
4.9
3.0
2.0
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
nC
nC
nC
nC
VGS = 0 V to 5 V
V
DD = 75 V,
ID = 4.1 A
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 4.1 A
(Note 2)
(Note 2)
0.81
0.77
61
1.3
1.2
98
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2 A
trr
Reverse Recovery Time
ns
IF = 4.1 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
71
114
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θCA
θJA
θJC
the user's board design.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 1 mH, I = 9 A, V = 135 V, V = 10 V.
J
AS
DD
GS
©2010 Semiconductor Components Industries, LLC.
FDS86242 Rev. 1
www.onsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
20
5
4
3
2
1
0
VGS = 10 V
VGS = 5 V
VGS = 5.5 V
VGS = 7 V
VGS = 6 V
15
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
VGS = 5.5 V
VGS = 7 V
5
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
0
0
1
2
3
4
5
0
5
10
15
20
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
300
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 4.1 A
GS = 10 V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
250
200
150
100
50
ID = 4.1 A
TJ = 125 o
C
TJ = 25 o
C
0
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
30
VGS = 0 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 150 o
C
15
10
5
1
0.1
VDS = 5 V
TJ = 25 oC
TJ = 25 o
C
TJ = 150 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Semiconductor Components Industries, LLC.
FDS86242 Rev. 1
www.onsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
1000
100
10
ID = 4.1 A
8
Ciss
VDD = 75 V
VDD = 50 V
6
4
2
0
Coss
VDD = 100 V
Crss
f = 1 MHz
= 0 V
V
GS
1
0.1
1
10
100
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
5
4
3
2
1
0
30
20
TJ = 25 o
C
10
TJ = 100 o
C
VGS = 10 V
VGS = 6 V
TJ = 125 o
C
RθJA = 50 oC/W
50
1
0.001
0.01
0.1
1
10
25
75
100
125
150
TC, Ambient TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
100
10
2000
THIS AREA IS
LIMITED BY rDS(on)
1000
100
10
100us
1 ms
1
10 ms
100 ms
0.1
SINGLE PULSE
TJ = MAX RATED
1 s
SINGLE PULSE
RθJA = 125 oC/W
R
θJA = 125oC/W
A = 25 oC
10 s
DC
0.01
0.001
T
T
A = 25 oC
1
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100
800
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2010 Semiconductor Components Industries, LLC.
FDS86242 Rev. 1
www.onsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
RθJA = 125 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
0.0005
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Semiconductor Components Industries, LLC.
FDS86242 Rev. 1
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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