FDS86267P [ONSEMI]
P 沟道，屏蔽门极 PowerTrench® MOSFET，-150V，-2.2A，255mΩ;
| 型号： | FDS86267P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，屏蔽门极 PowerTrench® MOSFET，-150V，-2.2A，255mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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May 2015
FDS86267P
P-Channel Shielded Gate PowerTrench® MOSFET
-150 V, -2.2 A, 255 mΩ
Features
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates shielded gate technology. The process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Shielded Gate MOSFET Technology
Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A
Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A
Very Low rDS(on) Mid Voltage P-channel Silicon Technology
Optimised for Low Qg
This Product is Optimised for Fast Switching Applications as
well as Load Switch Applications
Applications
Active Clamp Switch
Load Switch
100% UIL Tested
RoHS Compliant
D
D
D
D
D
D
G
S
S
5
6
7
8
4
3
2
1
D
D
G
SO-8
S
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
-150
±25
-2.2
-34
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
ID
A
mJ
W
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
54
TA = 25 °C
TA = 25 °C
2.5
Power Dissipation
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
50
°C/W
(Note 1b)
125
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS86267P
FDS86267P
SO-8
13 ’’
2500 units
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
-150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 μA, referenced to 25 °C
-121
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -120 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
-1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-2
-3
5
-4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
mV/°C
V
GS = -10 V, ID = -2.2 A
191
214
342
6.8
255
290
448
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = -6 V, ID = -2 A
mΩ
VGS = -10 V, ID = -2.2 A,TJ = 125 °C
VDS = -10 V, ID = -2.2 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
806
54
1.6
3
1130
75
pF
pF
pF
Ω
V
DS = -75 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1 MHz
2.3
6
0.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9.7
2.5
17
5.7
11
20
10
30
12
16
10
ns
ns
VDD = -75 V, ID = -2.2 A,
VGS = -10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to -10 V
nC
nC
nC
nC
Qg
VGS = 0 V to -6 V
7
VDD = -75 V,
ID = -2.2 A
Qgs
Qgd
3.2
1.9
Drain-Source Diode Characteristics
V
GS = 0 V, IS = -2.2 A
(Note 2)
(Note 2)
-0.8
-0.8
65
-1.3
-1.2
104
251
VSD
Source-Drain Diode Forward Voltage
V
VGS = 0 V, IS = -2 A
trr
Reverse Recovery Time
ns
IF = -2.2 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
157
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 3 mH, I = -6 A, V = -150 V, V = -10 V. 100% tested at L = 0.3 mH, I = -13 A.
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
40
30
20
10
0
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
VGS = -10 V
8
VGS = -6 V
VGS = -5 V
VGS = -5 V
6
VGS = -5.5 V
4
VGS = -4.5 V
VGS = -10 V
VGS = -6 V
VGS = -5.5 V
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
2
4
6
8
10
0
1
2
3
4
5
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1500
2.2
ID = -2.2 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = -10 V
ID = -2.2 A
1000
500
0
TJ = 125 o
C
TJ = 25 o
C
4
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
10
10
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
1
0.1
VDS = -5 V
TJ = 25 o
C
6
TJ = 150 o
C
TJ = 150 o
C
4
2
0
TJ = 25 o
C
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
2
3
4
5
6
7
0.0
0.3
0.6
0.9
1.2
1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
1000
100
10
ID = -2.2 A
Ciss
8
VDD = -75 V
Coss
6
VDD = -50 V
VDD = -100 V
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
1
0.1
0
3
6
9
12
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0.0
50
VGS = -10 V
TJ = 25 o
C
10
TJ = 100 o
C
VGS = -6 V
TJ = 125 o
C
RθJA = 50 oC/W
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maxi mum Co nti nu o us Dra in
Current vs Ambient Temperature
1000
100
THIS AREA IS
SINGLE PULSE
RθJA = 125 oC/W
LIMITED BY rDS(on)
10
1
TA = 25 o
C
100
10
1
100 μs
1 ms
10 ms
100 ms
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
1 s
10 s
DC
0.01
CURVE BENT TO
MEASURED DATA
TA = 25 o
C
0.1
0.001
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
100 1000
0.01
0.1
1
10
100
1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
www.fairchildsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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