FDS8840NZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，18.6A，4.5mΩ;
| 型号： | FDS8840NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，18.6A，4.5mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET, N-Channel,
POWERTRENCH)
40 V, 18.6 A, 4.5 mW
FDS8840NZ
General Description
www.onsemi.com
The FDS8840NZ has been designed to minimize losses in power
conversion application. Advancements in both silicon and package
D
technologies have been combined to offer the lowest r
maintaining excellent switching performance.
while
DS(on)
D
D
D
Features
G
S
• Max r
• Max r
= 4.5 mꢀ at V = 10 V, I = 18.6 A
GS D
DS(on)
DS(on)
S
Pin 1
S
= 6.0 mꢀ at V = 4.5 V, I = 14.9 A
GS
D
SOIC8
CASE 751EB
• HBM ESD Protection Level of 6 kV Typical (Note 3)
• High Performance Trench Technology for Extremely Low r
DS(on)
and Fast Switching
PIN ASSIGNMENT
• High Power and Current Handling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
D
D
D
G
S
S
Compliant
Applications
• Synchronous Buck for Vcore and Server
• Notebook Battery Pack
• Load Switch
D
S
MARKING DIAGRAM
8
$Y&Z&2&K
FDS
8840NZ
1
$Y
&Z
&2
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDS8840NZ
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2019 − Rev. 0
FDS8840NZ/D
FDS8840NZ
ORDERING INFORMATION
Part Number
†
Device Marking
Package
Shipping
FDS8840NZ
FDS8840NZ
SOIC8
(Pb-Free / Halogen Free)
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
40
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Drain Current Pulsed
20
V
I
D
18.6
63
A
E
Single Pulse Avalanche Energy (Note 4)
600
mJ
W
AS
P
Power Dissipation, T = 25°C (Note 1a)
2.5
D
A
Power Dissipation, T = 25°C (Note 1b)
1.0
A
T , T
Operating and Storage Junction Temperature Range
−55 to 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
Value
25
Unit
R
°C/W
°C/W
ꢁ
JC
JA
R
50
ꢁ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Test Conditions
Symbol
Parameter
Min
Typ
Max
Unit
Off Characteristics
I
I
= 250 ꢂ A, V = 0 V
BV
Drain to Source Breakdown Voltage
40
V
D
GS
DSS
ΔBVDSS
ΔTJ
= 250 ꢂ A, referenced to 25°C
Breakdown Voltage Temperature Coefficient
31
mV/°C
D
V
V
= 32 V, V = 0 V
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
1
ꢂ A
ꢂ A
DS
GS
DSS
=
20 V, V = 0 V
I
10
GS
DS
GSS
On Characteristics
VGS = VDS, ID = 250 ꢂ A
VGS(th)
Gate to Source Threshold Voltage
1.0
1.8
−6
3.0
V
ΔVGS(th)
ΔTJ
ID = 250 ꢂ A, referenced to 25°C
Gate to Source Threshold Voltage Temperature
Coefficient
mV/°C
r
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10 V, ID = 18.6 A
3.9
4.6
5.9
83
4.5
6.0
7.0
DS(on)
VGS = 4.5 V, ID = 14.9 A
VGS = 10 V, ID = 18.6 A, TJ = 125°C
VDS = 5 V, ID = 18.6 A
g
FS
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
5665
650
445
1.2
7535
865
pF
pF
pF
Ω
VDS = 20 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
670
www.onsemi.com
2
FDS8840NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Test Conditions
Symbol
Parameter
Min
Typ
Max
Unit
Switching Characteristics
td(on)
tr
Turn−On Delay Time
Rise Time
18
13
57
11
32
23
ns
ns
VDD = 20 V, ID = 18.6 A, VGS = 10 V,
R
GEN = 6 Ω
td(off)
tf
Turn−Off Delay Time
Fall Time
103
20
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
103
54
16
19
144
76
nC
nC
nC
nC
VDD = 20 V,
ID = 18.6 A
Qg
Qgs
Qgd
Drain−Source Diode Characteristics
VGS = 0 V, IS = 18.6 A
VGS = 0 V, IS = 2.1 A
0.8
0.7
33
1.2
1.2
53
VSD
Source to Drain Diode Forward Voltage
V
trr
Reverse Recovery Time
ns
IF = 18.6 A, di/dt = 100 A/ꢂ s
Qrr
Reverse Recovery Charge
21
34
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by
JC
ꢁ
ꢁ
JA
design while R
is determined by the user’s board design.
ꢁ
CA
a.) 50°C/W when mounted on a
b.) 125°C/W when mounted on a
minimum pad
2
1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T = 25°C, L = 3 mH, I = 20 A, V = 40 V, V = 10 V.
J
AS
DD
GS
www.onsemi.com
3
FDS8840NZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
60
50
40
30
20
10
0
5
4
3
VGS = 4.5 V
GS = 4 V
V
GS = 10 V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
VGS = 3.5 V
VGS = 3 V
V
GS = 3 V
2
1
0
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
0
0.2
0.4
0.6
0.8
0
10
20
30
40
50
60
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs Drain
Current and Gate Voltage
1.8
12
ID = 18.6 A
VGS = 10 V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
9
ID = 18.6 A
TJ = 125 oC
6
3
TJ = 25oC
0
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATUREoC( )
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs Junction
Temperature
Figure 4. On−Resistance vs Gate to Source Voltage
100
60
PULSE DURATION = 80μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
50
VDS = 5 V
40
TJ = 150 oC
10
TJ = 150 o
C
30
20
10
0
T C
J = 25 o
1
TJ = 25 o
C
TJ = −55oC
1.0
TJ = −55oC
0.1
0.2
0.4
0.6
0.8
1.2
01234
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs
Source Current
www.onsemi.com
4
FDS8840NZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
8
10000
ID = 18.6 A
Ciss
VDD = 15 V
6
V
DD = 20 V
1000
100
Coss
4
V
DD = 25 V
Crss
2
f = 1 MHz
VGS = 0 V
0
0
30
60
90
120
0.1
1
10
40
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10−3
30
VGS = 0 V
10−4
TJ = 25 o
C
10−5
TJ = 125 oC
TJ = 100 o
C
10
10−6
TJ = 25 o
C
10−7
10−8
10−9
TJ = 125 o
C
1
0.001 0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
tAV, TIME IN AVALANCHE (ms)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching Capability
Figure 10. IGSS vs VGS
2000
100
1000
100
10
VGS = 10 V
1 ms
10
SINGLE PULSE
ꢁ JA = 125oC/W
A = 25oC
10 ms
R
T
100 ms
1
0.1
THIS AREA IS
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
TJ = MAX RATED
R
ꢁ JA = 125oC/W
A = 25oC
10 s
DC
1
T
0.3
0.01
10−3
10−2
10−1
t, PULSE WIDTH (sec)
1
10
100
1000
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
www.onsemi.com
5
FDS8840NZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
ꢁ JA = 125 oC/W
NOTES:
DUTY FACTOR: D = t /t
R
1
2
0.001
PEAK T = P x Z
x R + T
J
DM
ꢁ JA
ꢁ JA
A
0.0003
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDS8858CZ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明