FDS8984-F085 [ONSEMI]
30 V、7.0 A、19 mΩ、SO-8、逻辑电平双通道 N 沟道 PowerTrench®;
| 型号： | FDS8984-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 30 V、7.0 A、19 mΩ、SO-8、逻辑电平双通道 N 沟道 PowerTrench® 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：479K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS8984-F085
N-Channel PowerTrench® MOSFET
30V, 7A, 23mΩ
General Description
Features
Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
Low gate charge
100% RG tested
Qualified to AEC Q101
RoHS Compliant
D2
D2
5
6
7
8
4
3
2
1
D1
D1
Q2
Q1
G2
SO-8
S2
G1
S1
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
30
V
V
±20
(Note 1a)
(Note 2)
7
30
A
ID
A
EAS
PD
Single Pulse Avalache Energy
32
mJ
W
Power Dissipation for Single Operation
Derate above 25°C
1.6
13
mW/°C
°C
TJ, TSTG
Operating and Storage Temperature
-55 to 150
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDS8984
FDS8984-F085
SO-8
330mm
2500 units
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
1
Publication Order Number:
FDS8984-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
∆BVDSS
∆TJ
23
mV/°C
1
V
DS = 24V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
VGS = 0V
TJ = 125°C
250
±100
VGS = ±20V,VDS = 0V
nA
On Characteristics (Note 3)
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
1.2
1.7
2.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
- 4.3
mV/°C
VGS = 10V, ID = 7A
19
24
23
30
V
GS = 4.5V, ID = 6A
rDS(on)
Drain to Source On Resistance
mΩ
VGS = 10V, ID = 7A,
TJ = 125°C
26
32
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
475
100
65
635
135
100
1.6
pF
pF
pF
Ω
V
DS = 15V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0MHz
f = 1MHz
0.9
Switching Characteristics (Note 3)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
5
9
10
18
68
34
ns
ns
ns
ns
VDD = 15V, ID = 7A
VGS = 10V, RGS = 33Ω
Turn-Off Delay Time
Fall Time
42
21
V
DS = 15V, VGS = 10V,
Qg
Total Gate Charge
9.2
13
7
nC
ID = 7A
Qg
Total Gate Charge
5.0
1.5
2.0
nC
nC
nC
V
DS = 15V, VGS = 5V,
Qgs
Qgd
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
ID = 7A
Drain-Source Diode Characteristics
I
SD = 7A
0.9
0.8
1.25
1.0
33
V
V
VSD
Source to Drain Diode Voltage
ISD = 2.1A
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
nC
IF = 7A, di/dt = 100A/µs
Qrr
20
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R is determined by the user’s board design.
θCA
θJC
c) 135°C/W when
mounted on a
minimun pad
b) 125°C/W when
mounted on a 0.02 in
pad of oz copper
a) 78°C/W when
mounted on a 0.5in
pad of 2 oz copper
2
2
Scale 1 : 1 on letter size paper
2: Starting T = 25°C, L = 1mH, I = 8A, V = 27V, V = 10V.
J
AS
DD
GS
3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.
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2
Typical Characteristics TJ = 25°C unless otherwise noted
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
VGS=10V PULSE DURATION =80µS
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
DUTY CYCLE =0.5% MAX
VGS=5.0V
VGS=3.5V
VGS=3.0V
VGS=4.5V
VGS=4.0V
VGS=3.5V
VGS=4.5V
VGS=4.0V
VGS=3.0V
VGS=10V
25
VGS=5.0V
20
0.0
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5
10
15
30
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance vs Drain Current and
Gate Voltage
60
1.6
ID = 7A
GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 7A
55
50
45
40
35
30
25
20
15
V
1.4
1.2
1.0
0.8
0.6
TJ = 125oC
TJ = 25oC
2
4
6
8
10
-80
-40
0
40
80
120
160
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On Resistance vs Temperature
Figure 4. On-Resistance vs Gate to Source
Votlage
30
30
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
VGS = 0V
10
25
20
15
10
5
VDD = 5V
TJ = 150oC
TJ = 150OC
TJ = 25oC
1
0.1
TJ = -55oC
TJ = 25OC
0.01
TJ = - 55OC
1E-3
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
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3
Typical Characteristics TJ = 25°C unless otherwise noted
700
600
10
CISS
8
500
f = 1MHz
GS = 0V
VDD = 15V
V
VDD = 10V
6
400
300
200
100
COSS
4
2
0
VDD = 20V
CRSS
0
2
4
6
8
10
0.1
1
10
30
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
8
7
20
10
6
VGS=10V
STARTING TJ = 25OC
5
4
VGS=4.5V
3
2
1
0
STARTING TJ = 125OC
1
0.01
25
50
75
100
125
150
0.1
1
10 20
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (mS)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
3000
o
T
= 25 C
A
10us
1000
100
10
FOR TEMPERATURES
o
100us
ABOVE 25 C DERATE PEAK
10
1
CURRENT AS FOLLOWS:
150 – T
A
I = I
1ms
25
-----------------------
125
VGS=10V
OPERATION IN THIS
AREA MAY BE
10ms
100ms
1s
LIMITED BY r
DS(on)
0.1
SINGLE PULSE
DC
TJ = MAX RATED
SINGLE PULSE
TA = 25oC
0.01
1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
1E-3
1E-4
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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