FDT458P [ONSEMI]
-30V P沟道PowerTrench® MOSFET;
| 型号： | FDT458P |
| 厂家： | 
ONSEMI |
| 描述： | -30V P沟道PowerTrench® MOSFET |
| 文件： | 总7页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2001
FDT458P
30V P-Channel PowerTrenchÒ MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
· 3.4 A, –30 V. RDS(ON) = 130 mW @ VGS = 10 V
RDS(ON) = 200 mW @ VGS = 4.5 V
· Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
· Low gate charge (2.5 nC typical)
· High performance trench technology for extremely
low RDS(ON)
Applications
· Battery chargers
· Motor drives
· High power and current handling capability in a
widely used surface mount package
D
D
D
D
S
S
D
G
S
G
D
S
SOT-223*
(J23Z)
G
G
SOT-223
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
– 30
Units
V
V
A
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±20
(Note 1a)
3.4
10
PD
W
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
3.0
1.3
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
RqJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
458P
FDT458P
13’’
12mm
2500 units
Ó2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA
–30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
–23
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –24 V, VGS = 0 V
VGS = –25 V, VDS = 0 V
VGS = –25 V, VDS = 0 V
–1
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VDS = VGS, ID = –250 mA
–1
–5
–1.8
4
–3
V
DVGS(th)
DTJ
RDS(on)
ID = –250 mA, Referenced to 25°C
mV/°C
mW
Static Drain–Source
On–Resistance
VGS = –10 V,
ID = –3.4 A
105
157
147
130
200
210
VGS = –4.5 V, ID = –2.7 A
VGS=–10 V, ID =–3.4 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –3.4 A
A
S
Forward Transconductance
3
Dynamic Characteristics
C
Input Capacitance
205
55
pF
pF
pF
iss
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
26
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 W
4.5
12.5
11
9
23
20
4
ns
ns
ns
2
ns
Qg
VDS = –15 V,
VGS = –10 V
ID = –3.4 A,
2.5
0.7
1
3.5
nC
nC
nC
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.5
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –2.5 A (Note 2)
–0.8
Voltage
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
in2 pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDT458P Rev. B(W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
10
VGS = -10V
-6.0V
-5.0V
-4.5V
8
6
4
2
0
VGS=-4.5V
-4.0V
-5.0V
-6.0V
-3.5V
-7.0V
-8.0V
-10V
-3.0V
0.8
0
1
2
3
4
5
0
2
4
6
8
10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.7
1.5
1.3
1.1
0.9
0.7
0.55
ID = -3.4A
VGS = -10V
ID = -1.7A
0.45
0.35
0.25
0.15
0.05
TA = 125oC
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
5
4
3
2
1
0
10
VGS =0V
VDS = -5V
25oC
125oC
TA = -55oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT458P Rev. B(W)
Typical Characteristics
10
300
250
200
150
100
50
ID = -3.4A
VDS = -5V
-10V
f = 1 MHz
VGS = 0 V
8
6
4
2
0
CISS
-15V
COSS
CRSS
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
200
SINGLE PULSE
R
qJA = 110oC/W
TA = 25oC
160
100ms
RDS(ON) LIMIT
1m
10ms
120
80
100ms
1
1s
10s
DC
VGS = -10V
SINGLE PULSE
RqJA = 110oC/W
TA = 25oC
0.1
0.01
40
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA (t) = r(t) + Rq
0.2
JA
Rq = 110 °C/W
JA
0.1
0.01
0.1
0.05
P(pk)
0.02
t1
0.01
t2
TJ - TA = P * RqJA (t)
Single Pulse
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDT458P Rev. B(W)
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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