FDT86246 [ONSEMI]
N 沟道 PowerTrench® MOSFET 150V，2A，236mΩ;
| 型号： | FDT86246 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 150V，2A，236mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel
Shielded Gate
POWERTRENCH)
SOT−223
CASE 318H
150 V, 2 A, 236 mW
FDT86246
Description
D
This N−Channel MOSFET is produced using Fairchild onsemi
advanced PowerTrench® Process that has been optimized for
R , switching performance and ruggedness.
DS(on)
G
D
S
Features
• Max R
• Max R
= 236 mW at V = 10 V, I = 2 A
DS(on)
DS(on)
GS
D
= 329 mW at V = 6 V, I = 1.7 A
GS
D
MARKING DIAGRAM
• High Performance Trench Technology for Extremely Low R
DS(on)
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
FSAXY
86246
• Fast Switching Speed
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
1
Z
XY
86246
= Assembly Plan Code
= Date Code (Year & week)
= Specific Device Code
Typical Applications
• Load Switch
• Primary Switch
ORDERING INFORMATION
MOSFET Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Drain to Source Voltage
Ratings
Unit
V
†
Device
Shipping
4000 /
Tape & Reel
Package
V
DS
150
FDT86246
SOT−223
(Pb−Free)
V
GS
Gate to Source Voltage
20
V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
I
A
Drain Current −Continuous (Note 1a)
−Pulsed
2
D
8
E
AS
Single Pulse Avalanche Energy (Note 3)
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
8
2.2
mJ
W
P
D
1.0
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
Value
12
Unit
R
°C/W
θ
JC
JA
R
55
θ
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2022 − Rev 3
FDT86246/D
FDT86246
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
−
−
−
I
I
= 250 mA, V = 0 V
BV
Drain to Source Breakdown Voltage
150
V
D
GS
DSS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
104
mV/°C
DBVDSS(th)
DTJ
D
−
−
−
−
mA
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
1
DSS
GSS
DS
GS
nA
I
=
20 V, V = 0 V
100
GS
DS
On Characteristics
V
GS
= V , I = 250 mA
DS D
V
GS(th)
Gate to Source Threshold Voltage
2.0
3.1
4.0
V
Gate to Source Threshold Voltage
Temperature Coefficient
I = 250 mA, referenced to 25°C
D
−
−9
−
mV/°C
DVGS(th)
DTJ
R
Static Drain to Source On Resistance
Forward Transconductance
−
−
−
−
mW
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2 A
194
231
349
5
236
329
425
−
DS(on)
D
= 6 V, I = 1.7 A
D
= 10 V, I = 2 A, T = 125°C
D
J
g
FS
= 10 V, I = 2 A
S
D
Dynamic Characteristics
V
DS
= 75 V, V = 0 V, f =1 MHz
−
−
−
−
C
Input Capacitance
161
21
215
30
5
pF
pF
pF
W
GS
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
1.6
0.9
rss
−
R
g
Switching Characteristics
V
V
= 75 V, I = 2 A,
−
−
−
−
−
−
−
−
t
Turn−On Delay Time
7.8
2.3
4.6
1.2
2.9
1.7
0.9
0.8
16
10
10
10
4
ns
ns
ns
ns
nC
−
DD
GS
D
d(on)
= 10 V, R
= 6 Ω
GEN
t
r
Rise Time
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
Q
Q
V
GS
V
GS
= 0 V to 10 V,
= 0 V to 5 V
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
g(TOT)
g(TOT)
3
−
V
D
= 75 V,
= 2 A
Q
nC
nC
DD
gs
I
−
Q
gd
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2
FDT86246
ELECTRICAL CHARACTERISTICS (continued) T = 25°C unless otherwise noted
A
Symbol
Drain−Source Diode Characteristics
Source to Drain Diode Forward Voltage V = 0 V, I = 2 A (Note 2)
Parameter
Test Conditions
Min
Typ
Max
Unit
−
−
−
V
SD
0.84
44
1.3
71
49
V
GS
S
I = 2 A, di/dt = 100 A/ms
F
t
rr
Reverse Recovery Time
ns
nC
Q
Reverse Recovery Charge
31
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a)
55 °C/W when mounted on a
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
2
1 in pad of 2 oz copper
2. Pulse Test : Pulse Width < 300 ms, Duty Cycle < 2.0%
3. Starting T = 25 °C; N−ch: L = 1.0 mH, I = 4.0 A, V = 135 V, V = 10 V.
J
AS
DD
GS
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3
FDT86246
TYPICAL CHARACTERISTICS T = 25°C UNLESS OTHERWISE NOTED
J
8
3.0
V
V
= 10 V
= 7 V
GS
GS
V
GS
= 5 V
V
GS
= 6 V
2.5
2.0
1.5
6
4
2
V
= 5.5 V
GS
V
GS
= 5.5 V
V
= 6 V
GS
1.0
0.5
V
6
= 10 V
GS
V
= 7 V
V
4
= 5 V
GS
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
5
0
4
8
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 2. Normalized On−Resistance vs
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
2.4
800
600
400
200
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
= 2 A
GS
D
I
D
= 2 A
V
= 10 V
2.0
1.6
1.2
T = 125°C
J
0.8
0.4
T = 25°C
J
100 125 150
4
6
8
10
−75 −50 −25
0
75
25 50
T , JUNCTION TEMPERATURE (5C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 4. On−Resistance vs Gate to
Figure 3. Normalized On Resistance vs
Junction Temperature
Source Voltage
10
1
8
6
4
2
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
T = 150°C
J
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
0.01
T = −55°C
J
T =−55°C
J
0.001
0
0.0
0.2
0.8
1.0
1.2
0.4
0.6
5
2
3
4
6
7
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
FDT86246
TYPICAL CHARACTERISTICS (CONTINUED) T = 25°C UNLESS OTHERWISE NOTED
J
10
8
500
I
D
= 2 A
V
DD
= 50 V
C
iss
V
DD
= 75 V
100
10
1
6
V
DD
= 100 V
C
oss
4
2
0
f = 1 MHz
= 0 V
V
C
GS
rss
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
7
5
6
5
4
3
2
1
0
V
GS
= 10 V
4
3
T = 25°C
J
V
GS
= 6 V
T = 100°C
J
2
T = 125°C
J
R
= 12 °C/W
q
JC
1
100
125
150
25
50
75
0.001
0.01
0.1
1
t
, TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10
300
SINGLE PULSE
R
= 118°C/W
q
JA
100
T = 25°C
A
100 us
1
1 ms
THIS AREA IS
10
10 ms
100 ms
r
)
LIMITEDBY DS(on
0.1
SINGLE PULSE
T
1 s
R
q
T = 25°C
A
10 s
DC
1
0.01
0.005
0.5
−4
−3
−2
−1
10
100
1000
0.1
1
10
100
500
10
10
10
10
1
t, PULSE WIDTH (sec)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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5
FDT86246
TYPICAL CHARACTERISTICS (CONTINUED) T = 25°C UNLESS OTHERWISE NOTED
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.05
t
1
0.02
0.01
t
2
NOTES: DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
0.01
PEAK T = P
x Z
x
R
T
q
q
J
DM
JA
+
JA + A
R
= 118°C/W
q
JA
0.005
−4
−3
−2
−1
1000
10
10
10
10
1
10
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
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