FDWS9510L-F085 [ONSEMI]
P 沟道逻辑电平 Power Trench® MOSFET-40V，-50A，13.5mΩ;
| 型号： | FDWS9510L-F085 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道逻辑电平 Power Trench® MOSFET-40V，-50A，13.5mΩ |
| 文件： | 总7页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel, Logic
Level, POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
−40 V
13.5 mW @ −10 V
−50 A
-40 V, -50 A, 13.5 mW
D (5,6,7,8)
FDWS9510L-F085
Features
• Typ R
• Typ Q
= 11 mW at V = −10 V; I = −50 A
GS D
DS(on)
G (4)
= 28 nC at V = −10 V; I = −50 A
g(tot)
GS
D
• UIS Capability
S (1,2,3)
P−Channel MOSFET
• Wettable Flanks for Automatic Optical Inspection (AOI)
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
Top
Bottom
Applications
D
D
D
D
• Automotive Engine Control
• Powertrain Management
• Solenoid and Motor Drivers
• Electronic Steering
• Integrated Starter/Alternator
• Distributed Power Architectures and VRM
• Primary Switch for 12 V Systems
G
S
S
S
Pin 1
DFNW8
CASE 507AU
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
16
Unit
V
V
DSS
ON
AYWWWL
Gate−to−Source Voltage
V
GS
V
FDWS
9510L
Continuous Drain Current
GS
T
T
= 25°C
= 25°C
I
D
−50
A
C
(V = 10 V) (Note 1)
Pulsed Drain Current
See
Figure 4
C
A
Y
= Assembly Location
= Year
= Work Week
= Assembly Lot
= Device Code
= Device Code
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
E
32
75
mJ
W
AS
P
D
WW
WL
FDWS
9510L
Derate above 25°C
0.5
W/°C
°C
Operating and Storage Temperature
T , T
−55 to
+175
J
STG
(Note: Microdot may be in either location)
Thermal Resistance (Junction−to−Case)
R
2
°C/W
°C/W
q
JC
JA
Maximum Thermal Resistance
(Junction−to−Ambient) (Note 3)
R
50
q
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by wirebond configuration
†
Device
Package
Shipping
FDWS9510L−F085
DFNW8
(Power56)
(Pb−Free)
3000 /
Tape & Reel
2. Starting Tj = 25°C, L = 40 mH, I = −40 A, V
= −40 V during inductor
AS
DD
charging and V = 0 V during time in avalanche
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
is guaranteed by design while R
q
JA
q
JC
is determined by the user’s board design. The maximum rating presented
2
here is based on mounting on a 1 in pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2021 − Rev. 2
FDWS9510L−F085/D
FDWS9510L−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
I
= −250 mA, V = 0 V
−40
−
−
−
−
−
−
1
V
VDSS
D
GS
I
V
= −40 V,
= 0 V
T = 25°C
J
mA
mA
nA
DSS
DS
GS
V
T = 175°C (Note 4)
J
−
1
I
Gate−to−Source Leakage Current
V
GS
=
16 V
−
100
GSS
ON CHARACTERISTICS
V
R
Gate−to−Source Threshold Voltage
Drain−to−Source On−Resistance
V
I
= V , I = −250 mA
−1
−
−1.8
18
−3
23
V
GS(th)
GS
DS
D
= −25 A, V = −4.5 V
mW
mW
DS(on)
D
GS
I
= −50 A
= −10 V
T = 25°C
J
−
11
13.5
23
D
V
GS
T = 175°C (Note 4)
J
−
18.8
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −20 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
2320
811
38
23
28
4
−
−
pF
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
R
V
GS
= 0.5 V, f = 1 MHz
−
W
g
Q
Total Gate Charge
V
= 0 to −10 V
= 0 to −1 V
37
−
nC
g(tot)
GS
Q
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
V
GS
g(th)
Q
V
= −20 V,
= −50 A
7
−
gs
DD
D
I
Q
4
−
gd
SWITCHING CHARACTERISTICS
t
Turn−On Time
V
GS
= −20 V, I = −50 A,
−
−
−
−
−
−
−
10
4
20
−
ns
on
DD
D
V
= −10 V, R
= 6 W
GEN
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Turn−Off Time
d(on)
t
r
−
t
110
37
−
−
d(off)
t
f
−
t
222
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode Voltage
I
= −50 A, V = 0 V
−
−
−
−
−1
−0.9
44
−1.25
−1.2
62
V
SD
SD
GS
I
= −25 A, V = 0 V
GS
SD
T
Reverse Recovery Time
I = −50 A, dI /dt = 100 A/ms
ns
rr
F
SD
Q
Reverse Recovery Charge
31
47
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production
J
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2
FDWS9510L−F085
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
60
50
40
Current Limited
by Package
30
20
V
GS
= 10 V
0.2
0
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
1
50% Duty Cycle
20%
P
DM
10%
5%
0.1
2%
t
1
t
2
1%
DUTY CYCLE, D = t /t
1 2
Peak T = P X Z X R + T
C
Single Pulse
q
q
JC
J
DM
JC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
V
GS
= −10 V
T
C
= 25°C
For temperatures above 25°C
derate peak current as follows:
175 * TC
Ǹ
I + I25
ƪ ƫ
150
100
10
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
FDWS9510L−F085
TYPICAL CHARACTERISTICS
1K
100
10
100
Operation in this area may
be limited by package
Starting T = 25°C
J
100 ms
10
Starting T = 150°C
J
T
C
= 25°C
T = Max Rated
J
1 ms
Single Pulse
If R = 0
=(L)(I )/(1.3*Rated BV
1
10 ms
t
− V
)
AV
AS
DSS
DD
100 ms
Operation in this area may
If R ≠ 0
=(L/R)In[(I *R)/(1.3*Rated BV
be limited by R
DS(on)
t
− V )+1]
AV
AS
DSS
DD
0.1
1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
t , TIME IN AVALANCHE (mS)
AV
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
120
90
100
10
1
V
GS
= 0 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
V
DS
= 5 V
60
T = 25°C
J
0.1
T = 175°C
30
0
J
0.01
T = 175°C
J
T = −55°C
J
T = −55°C
T = 25°C
J
J
0.001
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
150
100
150
100
V
GS
= 10 V
250 ms Pulse Width
T = 25°C
J
250 ms Pulse Width
T = 175°C
J
7.0 V
7.0 V
5.0 V
4.5 V
V
GS
= 10 V
5.0 V
4.5 V
4.0 V
3.5 V
4.0 V
3.5 V
50
0
50
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
FDWS9510L−F085
TYPICAL CHARACTERISTICS
120
1.8
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
I
V
= −50 A
D
1.6
1.4
1.2
1.0
100
80
= −10 V
GS
I
= −50 A
D
60
40
T = 175°C
J
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
20
0
0.8
0.6
T = 25°C
J
3
4
5
6
7
8
9
10
−80
−40
0
40
80
120
160
200
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. RDS(on) vs. Gate Voltage
Figure 12. Normalized RDS(on) vs. Junction
Temperature
1.2
1.0
0.8
1.10
1.05
1.00
V
= V
DS
= −250 mA
GS
I
D
= 5 mA
I
D
0.95
0.90
0.6
0.4
−80
−40
0
40
80
120
160
200
−80
−40
0
40
80
120
160 200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain−to−Source
Breakdown Voltage vs. Junction Temperature
10K
1K
10
8
V
DD
= −16 V
I
D
= −50 A
C
C
ISS
V
DD
= −24 V
6
OSS
V
DD
= −20 V
4
100
10
f = 1 MHz
= 0 V
2
0
V
GS
C
RSS
0
6
12
18
24
30
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 15. Capacitance vs. Drain−to−Source
Figure 16. Gate Charge vs. Gate−to−Source
Voltage
Voltage
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5
FDWS9510L−F085
PACKAGE DIMENSIONS
DFNW8 5.2x6.3, 1.27P
CASE 507AU
ISSUE A
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6
FDWS9510L−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries
in the United States and/or other countries.
onsemi,
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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