FDWS9510L-F085 [ONSEMI]

P 沟道逻辑电平 Power Trench® MOSFET-40V,-50A,13.5mΩ;
FDWS9510L-F085
型号: FDWS9510L-F085
厂家: ONSEMI    ONSEMI
描述:

P 沟道逻辑电平 Power Trench® MOSFET-40V,-50A,13.5mΩ

文件: 总7页 (文件大小:337K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
MOSFET – P-Channel, Logic  
Level, POWERTRENCH)  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
40 V  
13.5 mW @ 10 V  
50 A  
-40 V, -50 A, 13.5 mW  
D (5,6,7,8)  
FDWS9510L-F085  
Features  
Typ R  
Typ Q  
= 11 mW at V = 10 V; I = 50 A  
GS D  
DS(on)  
G (4)  
= 28 nC at V = 10 V; I = 50 A  
g(tot)  
GS  
D
UIS Capability  
S (1,2,3)  
PChannel MOSFET  
Wettable Flanks for Automatic Optical Inspection (AOI)  
AECQ101 Qualified  
These Devices are PbFree and are RoHS Compliant  
Top  
Bottom  
Applications  
D
D
D
D
Automotive Engine Control  
Powertrain Management  
Solenoid and Motor Drivers  
Electronic Steering  
Integrated Starter/Alternator  
Distributed Power Architectures and VRM  
Primary Switch for 12 V Systems  
G
S
S
S
Pin 1  
DFNW8  
CASE 507AU  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
16  
Unit  
V
V
DSS  
ON  
AYWWWL  
GatetoSource Voltage  
V
GS  
V
FDWS  
9510L  
Continuous Drain Current  
GS  
T
T
= 25°C  
= 25°C  
I
D
50  
A
C
(V = 10 V) (Note 1)  
Pulsed Drain Current  
See  
Figure 4  
C
A
Y
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot  
= Device Code  
= Device Code  
Single Pulse Avalanche Energy (Note 2)  
Power Dissipation  
E
32  
75  
mJ  
W
AS  
P
D
WW  
WL  
FDWS  
9510L  
Derate above 25°C  
0.5  
W/°C  
°C  
Operating and Storage Temperature  
T , T  
55 to  
+175  
J
STG  
(Note: Microdot may be in either location)  
Thermal Resistance (JunctiontoCase)  
R
2
°C/W  
°C/W  
q
JC  
JA  
Maximum Thermal Resistance  
(JunctiontoAmbient) (Note 3)  
R
50  
q
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Current is limited by wirebond configuration  
Device  
Package  
Shipping  
FDWS9510LF085  
DFNW8  
(Power56)  
(PbFree)  
3000 /  
Tape & Reel  
2. Starting Tj = 25°C, L = 40 mH, I = 40 A, V  
= 40 V during inductor  
AS  
DD  
charging and V = 0 V during time in avalanche  
DD  
3. R  
is the sum of the junctiontocase and casetoambient thermal  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
resistance where the case thermal reference is defined as the solder  
mounting surface of the drain pins. R  
is guaranteed by design while R  
q
JA  
q
JC  
is determined by the user’s board design. The maximum rating presented  
2
here is based on mounting on a 1 in pad of 2 oz copper.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
October, 2021 Rev. 2  
FDWS9510LF085/D  
 
FDWS9510LF085  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
B
DraintoSource Breakdown Voltage  
DraintoSource Leakage Current  
I
= 250 mA, V = 0 V  
40  
1
V
VDSS  
D
GS  
I
V
= 40 V,  
= 0 V  
T = 25°C  
J
mA  
mA  
nA  
DSS  
DS  
GS  
V
T = 175°C (Note 4)  
J
1
I
GatetoSource Leakage Current  
V
GS  
=
16 V  
100  
GSS  
ON CHARACTERISTICS  
V
R
GatetoSource Threshold Voltage  
DraintoSource OnResistance  
V
I
= V , I = 250 mA  
1  
1.8  
18  
3  
23  
V
GS(th)  
GS  
DS  
D
= 25 A, V = 4.5 V  
mW  
mW  
DS(on)  
D
GS  
I
= 50 A  
= 10 V  
T = 25°C  
J
11  
13.5  
23  
D
V
GS  
T = 175°C (Note 4)  
J
18.8  
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
= 20 V, V = 0 V, f = 1 MHz  
2320  
811  
38  
23  
28  
4
pF  
iss  
DS  
GS  
C
Output Capacitance  
oss  
C
Reverse Transfer Capacitance  
Gate Resistance  
rss  
R
V
GS  
= 0.5 V, f = 1 MHz  
W
g
Q
Total Gate Charge  
V
= 0 to 10 V  
= 0 to 1 V  
37  
nC  
g(tot)  
GS  
Q
Threshold Gate Charge  
GatetoSource Gate Charge  
GatetoDrain “Miller” Charge  
V
GS  
g(th)  
Q
V
= 20 V,  
= 50 A  
7
gs  
DD  
D
I
Q
4
gd  
SWITCHING CHARACTERISTICS  
t
TurnOn Time  
V
GS  
= 20 V, I = 50 A,  
10  
4
20  
ns  
on  
DD  
D
V
= 10 V, R  
= 6 W  
GEN  
t
TurnOn Delay Time  
TurnOn Rise Time  
TurnOff Delay Time  
TurnOff Fall Time  
TurnOff Time  
d(on)  
t
r
t
110  
37  
d(off)  
t
f
t
222  
off  
DRAINSOURCE DIODE CHARACTERISTICS  
V
SourcetoDrain Diode Voltage  
I
= 50 A, V = 0 V  
1  
0.9  
44  
1.25  
1.2  
62  
V
SD  
SD  
GS  
I
= 25 A, V = 0 V  
GS  
SD  
T
Reverse Recovery Time  
I = 50 A, dI /dt = 100 A/ms  
ns  
rr  
F
SD  
Q
Reverse Recovery Charge  
31  
47  
nC  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production  
J
www.onsemi.com  
2
 
FDWS9510LF085  
TYPICAL CHARACTERISTICS  
1.2  
1.0  
0.8  
0.6  
0.4  
60  
50  
40  
Current Limited  
by Package  
30  
20  
V
GS  
= 10 V  
0.2  
0
10  
0
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
T , CASE TEMPERATURE (°C)  
C
T , CASE TEMPERATURE (°C)  
C
Figure 1. Normalized Power Dissipation vs.  
Case Temperature  
Figure 2. Maximum Continuous Drain Current  
vs. Case Temperature  
2
1
50% Duty Cycle  
20%  
P
DM  
10%  
5%  
0.1  
2%  
t
1
t
2
1%  
DUTY CYCLE, D = t /t  
1 2  
Peak T = P X Z X R + T  
C
Single Pulse  
q
q
JC  
J
DM  
JC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t, RECTANGULAR PULSE DURATION (s)  
Figure 3. Normalized Maximum Transient Thermal Impedance  
1000  
V
GS  
= 10 V  
T
C
= 25°C  
For temperatures above 25°C  
derate peak current as follows:  
175 * TC  
Ǹ
I + I25  
ƪ ƫ  
150  
100  
10  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t, RECTANGULAR PULSE DURATION (s)  
Figure 4. Peak Current Capability  
www.onsemi.com  
3
FDWS9510LF085  
TYPICAL CHARACTERISTICS  
1K  
100  
10  
100  
Operation in this area may  
be limited by package  
Starting T = 25°C  
J
100 ms  
10  
Starting T = 150°C  
J
T
C
= 25°C  
T = Max Rated  
J
1 ms  
Single Pulse  
If R = 0  
=(L)(I )/(1.3*Rated BV  
1
10 ms  
t
V  
)
AV  
AS  
DSS  
DD  
100 ms  
Operation in this area may  
If R 0  
=(L/R)In[(I *R)/(1.3*Rated BV  
be limited by R  
DS(on)  
t
V )+1]  
AV  
AS  
DSS  
DD  
0.1  
1
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
V , DRAINTOSOURCE VOLTAGE (V)  
DS  
t , TIME IN AVALANCHE (mS)  
AV  
Figure 5. Forward Bias Safe Operating Area  
Figure 6. Unclamped Inductive Switching  
Capability  
120  
90  
100  
10  
1
V
GS  
= 0 V  
Pulse Duration = 250 ms  
Duty Cycle = 0.5% Max  
V
DS  
= 5 V  
60  
T = 25°C  
J
0.1  
T = 175°C  
30  
0
J
0.01  
T = 175°C  
J
T = 55°C  
J
T = 55°C  
T = 25°C  
J
J
0.001  
1
2
3
4
5
6
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
GS  
, GATETOSOURCE VOLTAGE (V)  
V
SD  
, BODY DIODE FORWARD VOLTAGE (V)  
Figure 7. Transfer Characteristics  
Figure 8. Forward Diode Characteristics  
150  
100  
150  
100  
V
GS  
= 10 V  
250 ms Pulse Width  
T = 25°C  
J
250 ms Pulse Width  
T = 175°C  
J
7.0 V  
7.0 V  
5.0 V  
4.5 V  
V
GS  
= 10 V  
5.0 V  
4.5 V  
4.0 V  
3.5 V  
4.0 V  
3.5 V  
50  
0
50  
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS  
, DRAINSOURCE VOLTAGE (V)  
V
DS  
, DRAINSOURCE VOLTAGE (V)  
Figure 9. Saturation Characteristics  
Figure 10. Saturation Characteristics  
www.onsemi.com  
4
FDWS9510LF085  
TYPICAL CHARACTERISTICS  
120  
1.8  
Pulse Duration = 250 ms  
Duty Cycle = 0.5% Max  
I
V
= 50 A  
D
1.6  
1.4  
1.2  
1.0  
100  
80  
= 10 V  
GS  
I
= 50 A  
D
60  
40  
T = 175°C  
J
Pulse Duration = 250 ms  
Duty Cycle = 0.5% Max  
20  
0
0.8  
0.6  
T = 25°C  
J
3
4
5
6
7
8
9
10  
80  
40  
0
40  
80  
120  
160  
200  
V
GS  
, GATETOSOURCE VOLTAGE (V)  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 11. RDS(on) vs. Gate Voltage  
Figure 12. Normalized RDS(on) vs. Junction  
Temperature  
1.2  
1.0  
0.8  
1.10  
1.05  
1.00  
V
= V  
DS  
= 250 mA  
GS  
I
D
= 5 mA  
I
D
0.95  
0.90  
0.6  
0.4  
80  
40  
0
40  
80  
120  
160  
200  
80  
40  
0
40  
80  
120  
160 200  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 13. Normalized Gate Threshold Voltage  
vs. Temperature  
Figure 14. Normalized DraintoSource  
Breakdown Voltage vs. Junction Temperature  
10K  
1K  
10  
8
V
DD  
= 16 V  
I
D
= 50 A  
C
C
ISS  
V
DD  
= 24 V  
6
OSS  
V
DD  
= 20 V  
4
100  
10  
f = 1 MHz  
= 0 V  
2
0
V
GS  
C
RSS  
0
6
12  
18  
24  
30  
0.1  
1
10  
100  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
Q , GATE CHARGE (nC)  
g
Figure 15. Capacitance vs. DraintoSource  
Figure 16. Gate Charge vs. GatetoSource  
Voltage  
Voltage  
www.onsemi.com  
5
FDWS9510LF085  
PACKAGE DIMENSIONS  
DFNW8 5.2x6.3, 1.27P  
CASE 507AU  
ISSUE A  
www.onsemi.com  
6
FDWS9510LF085  
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries  
in the United States and/or other countries.  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
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