FDY301NZ [ONSEMI]
N 沟道 2.5V 指定 PowerTrench® MOSFET 20V，0.2A，5Ω;
| 型号： | FDY301NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 2.5V 指定 PowerTrench® MOSFET 20V，0.2A，5Ω |
| 文件： | 总8页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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January 2006
FDY301NZ
Single N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v.
• 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V
DS(ON) = 7 Ω @ VGS = 2.5 V
R
Applications
• ESD protection diode (note 3)
• RoHS Compliant
• Li-Ion Battery Pack
S
G
S
1
2
G
3
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
20
Units
V
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
± 12
200
ID
(Note 1a) 1a)
mA
1000
PD
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1b) 1
625
mW
446
TJ, TSTG
Operating and Storage Junction Temperature
Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
200
280
RθJA
°C/W
Thermal Resistance, Junction-to-Ambient (Note 1b) 1
RθJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
D
FDY301NZ
7’’
8 mm
3000units
www.fairchildsemi.com
2006 Fairchild Semiconductor Corporation
FDY301NZ Rev A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
20
V
VGS = 0 V,
ID = 250 µA
Voltage
Breakdown Voltage Temperature
Coefficient
14
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 16 V,
Gate–Body Leakage,
VGS = 0 V
1
µA
µA
µA
IGSS
VGS = ± 12 V, VDS = 0 V
± 10
± 1
VGS = ± 4.5 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.6
-
1.5
V
V
DS = VGS
,
ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
2.8
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25
C
mV/°C
Static Drain–Source
On–Resistance
VGS = 4.5 V,
VGS = 2.5 V,
ID = 200 mA
ID = 175 mA
ID = 150 mA
ID = 20 mA
5
7
9
10
7
Ω
VGS = 1.8 V,
VGS = 1.5 V
V
GS = 4.5 V, ID=200mA, TJ = 125°C
gFS
Forward Transconductance
VDS = 5 V,
ID = 200 mA
1.1
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
60
20
10
pF
pF
pF
VDS = 10 V,
f = 1.0 MHz
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
ns
ns
VDD = 10 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 4.5 V,
8
16
ns
2.4
0.8
0.16
0.26
4.8
1.1
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 10 V,
GS = 4.5 V
ID = 200 mA,
V
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
IF = 200 mA,
dIF/dt = 100 A/µs
12
3
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
200°C/W when
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
mounted on a 1in2 pad
of 2 oz copper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY301NZ Rev A
www.fairchildsemi.com
Typical Characteristics
1
3.4
3.2
3
VGS = 4.5V
3.5V
3.0V
2.5V
VGS = 1.8V
0.8
0.6
0.4
0.2
0
2.8
2.6
2.4
2.2
2
2.0V
2.0V
1.8V
1.8
1.6
1.4
1.2
1
2.5V
3.0V
3.5V
0.8
1.5V
4.5V
0.8
0
0.2
0.4
0.6
1
0
0.25
0.5
0.75
1
ID, DRAIN CURRENT (A)
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1
1.6
1.4
1.2
1
ID = 200mA
VGS = 4.5V
ID = 100mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1.5
1
25oC
TA = -55oC
VGS = 0V
VDS = 5V
1.2
0.9
0.6
0.3
0
0.1
125oC
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY301NZ Rev A
www.fairchildsemi.com
Typical Characteristics
5
100
90
80
70
60
50
40
30
20
10
0
f = 1MHz
VGS = 0 V
ID = 600mA
4
Ciss
VDS = 5V
10V
3
2
1
0
15V
Coss
Crss
0
0.2
0.4
0.6
0.8
1
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
10
SINGLE PULSE
RθJA = 280°C/W
T
A = 25°C
RDS(ON) LIMIT
1ms
1
0.1
10ms
100ms
10s
1s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 280oC/W
T
A = 25oC
0
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
0.2
P(pk)
0.1
0.1
0.05
t1
t2
0.02
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY301NZ Rev A
www.fairchildsemi.com
Dimensional Outline and Pad Layout
1.70
1.50
0.35
0.25
0.50
0.50
3
1.70
1.50
0.98
0.78
1.14
1.80
1
2
(0.15)
0.50
0.66
0.50
1.00
LAND PATTERN RECOMMENDATION
0.78
0.58
0.20
0.04
SEE DETAIL A
0.43
0.28
0.54
0.34
DETAIL A
0.10
0.00
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY301NZ Rev A
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
PowerTrench
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
QFET
QS™
®
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
MSXPro™
OCX™
®
UltraFET
i-Lo™
ImpliedDisconnect™
IntelliMAX™
UniFET™
VCX™
Wire™
OCXPro™
OPTOLOGIC
®
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Across the board. Around the world.™
®
The Power Franchise
SuperFET™
SuperSOT™-3
Programmable Active Droop™
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FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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