FFA40UP35STU [ONSEMI]
40A，350V，Ultrafast 二极管;
| 型号： | FFA40UP35STU |
| 厂家： | 
ONSEMI |
| 描述： | 40A，350V，Ultrafast 二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2016
FFA40UP35S
40 A, 350 V Ultrafast Diode
Features
Description
•
•
•
•
•
Ultrafast Recovery, trr < 55 ns (@ IF = 40 A)
Max. Forward Voltage, VF =1.6 V(Tc = 25oC)
Reverse Voltage: VRRM = 350 V
Avalanche Energy Rated
The FFA40UP35S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use
as freewheeling and clamping diodes in a variety of switching
power supplies and other power swithching applications. It is
specially suited for use in switching power supplies and industrial
applicationa as welder and UPS application.
RoHS Compliant
Applications
•
•
•
General Purpose
SMPS, Free-Wheeling Diode for Motor Application
Power Switching Circuits, Welder, UPS
1
2
1
3
TO-3PN
2
3
1. Anode 2. Cathode 3. Anode
1. Anode 2. Cathode 3. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Parameter
Ratings
350
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
350
V
350
V
IF(AV)
Average Rectified Forward Current
@ TC = 125oC
40
A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
IFSM
300
A
TJ, TSTG
Operating and Storage Temperature Range
-65 to +175
oC
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
Unit
oC/W
RθJC
0.8
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size
Tape Width
Quantity
FFA40UP35STU
F40UP35S
TO-3P
Tube
N/A
N/A
30
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
1
www.fairchildsemi.com
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
IF = 40 A
IF = 40 A
T
C = 25oC
TC = 125oC
-
-
-
-
1.6
1.5
VF1
V
V
R = 350 V
T
C = 25oC
-
-
-
-
100
500
IR1
trr
μA
VR = 350 V
TC = 125oC
IF = 1 A, diF/dt = 100 A/μs, VR = 30 V
IF = 40 A, diF/dt = 200 A/μs, VR = 230 V
-
-
26
28
53
55
TC = 25oC
ns
ta
tb
Qrr
-
-
-
17
11
36
-
-
-
ns
ns
nC
IF = 40 A, diF/dt = 200 A/μs, VR = 230V
TC = 25oC
WAVL
Avalanche Energy ( L = 40 mH)
20
-
-
mJ
Notes:
1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 4. Typical Reverse Current vs.
Figure 3. Typical Forward Voltage Drop
Reverse Voltage
vs. Forward Current
100
100
10
TC = 125oC
TC = 125oC
10
1
TC = 75oC
TC = 75oC
TC = 25oC
0.1
1
TC = 25oC
0.01
1E-3
0.2
0.0
10
100
200
300
350
0.5
1.0
1.5
2.0
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
Figure 5.Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
vs. di /dt
F
50
40
30
20
560
IF = 40A
Typical Capacitance
at 0V = 530 pF
480
TC = 125oC
400
320
240
160
80
TC = 75oC
TC = 25oC
100
200
300
diF/dt [A/μs]
400
500
0.1
1
10
100
Reverse Voltage, VR [V]
Figure 8. Forward Current Derating Curve
Figure 7. Typical Reverse Recovery
Current vs. di /dt
F
10
100
80
60
40
20
0
8
T
= 125oC
C
TC = 75oC
6
T
= 25oC
4
C
2
IF = 40A
500
100
200
300
diF/dt [A/μs]
400
25
50
75
100
125
150
175
Case temperature, TC [oC]
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 9. Transient Thermal Response Curve
2
1
0.5
0.2
PDM
0.1
0.1
t1
t2
0.05
*Notes:
0.02
0.01
1. ZθJC(t) = 0.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.005
10-5
10-4
10-3
Rectangular Pulse Duration [sec]
10-2
10-1
1
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
www.fairchildsemi.com
4
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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