FFPF08H60STU [ONSEMI]

8A,600V,极快速 II 二极管;
FFPF08H60STU
型号: FFPF08H60STU
厂家: ONSEMI    ONSEMI
描述:

8A,600V,极快速 II 二极管

局域网 PC 二极管
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
November 2014  
FFPF08H60S  
8 A, 600 V, Hyperfast II Diode  
Features  
Description  
Hyperfast Recovery trr = 45 ns (@ IF = 8 A)  
Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)  
600 V Reverse Voltage and High Reliability  
The FFPF08H60S is a hyperfast II diode with soft recovery  
characteristics. It has the half recovery time of ultrafast diodes  
and is silicon nitride passivated ionimplanted epitaxial planar  
construction. These devices are intended to be used as  
freewheeling/ clamping diodes and diodes in a variety of  
switching power supplies and other power switching  
Avalanche Energy Rated  
RoHS Compliant  
applications. Their low stored charge and hyperfast soft recovery  
minimize ringing and electrical noise in many power switching  
circuits reducing power loss in the switching transistors.  
Applications  
General Purpose  
Switching Mode Power Supply  
Free-Wheeling Diode for Motor Application  
Power Switching Circuits  
Pin Assignments  
1
2
TO-220F-2L  
1. Cathode 2. Anode  
1. Cathode  
2. Anode  
T
= 25°C unless otherwise noted  
Absolute Maximum Ratings  
C
Symbol  
Parameter  
Unit  
Ratings  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
600  
600  
600  
8
V
V
V
A
A
Working Peak Reverse Voltage  
DC Blocking Voltage  
IF(AV)  
IFSM  
Average Rectified Forward Current  
@ TC = 105 °C  
Non-repetitive Peak Surge Current  
60Hz Single Half-Sine Wave  
60  
TJ, TSTG  
Operating Junction and Storage Temperature  
- 65 to +175  
°C  
T
= 25°C unless otherwise noted  
Thermal Characteristics  
C
Symbol  
Parameter  
Max.  
Unit  
RθJC  
Maximum Thermal Resistance, Junction to Case  
3.4  
°C/W  
Package Marking and Ordering Information  
Part Number  
Top Mark  
Package  
Packing Method Reel Size  
Tape Width  
Quantity  
FFPF08H60STU  
FFPF08H60S  
TO-220F-2L  
Tube  
N/A  
N/A  
60  
1
www.fairchildsemi.com  
©2007 Fairchild Semiconductor Corporation  
FFPF08H60S Rev. C2  
Electrical Characteristics  
T
= 25°C unless otherwise noted  
C
Parameter  
Conditions  
Min.  
Typ.  
Max  
Unit  
1
IF = 8 A  
IF = 8 A  
T
C = 25 °C  
-
-
-
-
2.1  
1.7  
V
V
VF  
TC = 125 °C  
1
VR = 600 V  
VR = 600 V  
T
C = 25 °C  
-
-
-
-
100  
200  
µA  
µA  
IR  
TC = 125 °C  
IF =1 A, diF/dt = 100 A/µs, VR = 30 V  
IF =8 A, diF/dt = 100 A/µs, VR = 390 V  
trr  
T
C = 25 °C  
-
-
-
-
35  
45  
ns  
ns  
TC = 25 °C  
ta  
tb  
Qrr  
IF =8 A, diF/dt = 100 A/µs, VR = 390 V  
TC = 25 °C  
TC = 25 °C  
TC = 25 °C  
-
-
-
15  
16  
18.6  
-
-
-
ns  
ns  
nC  
WAVL  
Avalanche Energy (L = 40 mH)  
20  
-
-
mJ  
Notes:  
1. Pulse : Test Pulse width = 300 µs, Duty Cycle = 2%  
Test Circuit and Waveforms  
Figure 1. Diode Reverse Recovery Test Circuit & Waveform  
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform  
©2007 Fairchild Semiconductor Corporation  
2
www.fairchildsemi.com  
FFPF08H60S Rev. C2  
Typical Performance Characteristics  
T = 25°C unless otherwise noted  
C
Figure 3. Typical Forward Voltage Drop  
Figure 4. Typical Reverse Current  
100  
100  
TC=100oC  
10  
TC=125oC  
10  
1
TC=150oC  
TC=25oC  
0.1  
TC=25oC  
1
0.01  
1E-3  
0.1  
0
1
2
3
4
5
0
100  
200  
300  
400  
500  
600  
FORWARD VOLTAGE, VF [V]  
REVERSE VOLTAGE, VR [V]  
Figure 5. Typical Junction Capacitance  
Figure 6. Typical Reverse Recovery Time  
80  
100  
IF=8A  
f=1MHz  
90  
80  
70  
60  
40  
20  
0
TC=125oC  
60  
50  
40  
TC=25oC  
30  
20  
10  
1
10  
100  
100  
200  
300  
400  
500  
600  
REVERSE VOLTAGE, VR [V]  
diF/dt [A/µs]  
Figure 7. Typical Reverse Recovery Current  
Figure 8. Forward Current Deration Curve  
14  
10  
8
IF=8A  
12  
10  
8
6
TC=125oC  
DC  
6
4
4
TC=25oC  
2
2
0
100  
200  
300  
400  
500  
600  
0
80  
90  
100  
110  
120  
130  
140  
150  
diF/dt [A/µs]  
CASE TEMPERATURE, TC [oC]  
3
www.fairchildsemi.com  
©2007 Fairchild Semiconductor Corporation  
FFPF08H60S Rev. C2  
Mechanical Dimensions  
Figure 9. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
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ically the warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002.  
©2007 Fairchild Semiconductor Corporation  
4
www.fairchildsemi.com  
FFPF08H60S Rev. C2  
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FRFET  
®*  
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®
®
Awinda  
AX-CAP *  
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®
Global Power ResourceSM  
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Green FPS™  
PowerTrench  
PowerXS™  
Programmable Active Droop™  
QFET  
QS™  
Quiet Series™  
RapidConfigure™  
®
TinyBoost  
TinyBuck  
BitSiC™  
®
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
TinyCalc™  
®
Green FPS™ e-Series™  
Gmax™  
GTO™  
®
TinyLogic  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
IntelliMAX™  
Current Transfer Logic™  
ISOPLANAR™  
Marking Small Speakers Sound Louder  
and Better™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
®
DEUXPEED  
TranSiC™  
Dual Cool™  
Saving our world, 1mW/W/kW at a time™  
SignalWise™  
SmartMax™  
TriFault Detect™  
TRUECURRENT *  
®
EcoSPARK  
®
EfficentMax™  
ESBC™  
SerDes™  
SMART START™  
MicroPak™  
MicroPak2™  
MillerDrive™  
Solutions for Your Success™  
SPM  
®
®
®
®
STEALTH™  
UHC  
Fairchild  
®
®
MotionMax™  
SuperFET  
Ultra FRFET™  
UniFET™  
VCX™  
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VoltagePlus™  
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Fairchild Semiconductor  
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®
MotionGrid  
SuperSOT™-3  
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SuperSOT™-8  
®
®
MTi  
MTx  
MVN  
FACT  
FAST  
®
®
®
®
SupreMOS  
FastvCore™  
FETBench™  
FPS™  
®
mWSaver  
SyncFET™  
Sync-Lock™  
OptoHiT™  
Xsens™  
仙童 ™  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications  
may change in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later  
date. Fairchild Semiconductor reserves the right to make changes at any time without  
notice to improve design.  
Preliminary  
First Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Full Production  
Datasheet contains specifications on a product that is discontinued by Fairchild  
Semiconductor. The datasheet is for reference information only.  
Not In Production  
Rev. I71  
5
www.fairchildsemi.com  
©2007 Fairchild Semiconductor Corporation  
FFPF08H60S Rev. C2  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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