FFPF08S60SNTU [ONSEMI]
8A，600V，STEALTH™ II 二极管;
| 型号： | FFPF08S60SNTU |
| 厂家： | 
ONSEMI |
| 描述： | 8A，600V，STEALTH™ II 二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：752K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2014
FFPF08S60SN
8 A, 600 V, STEALTHTM II Diode
Features
Description
•
•
•
•
•
Stealth Recovery trr = 25 ns (@ IF = 8 A)
Max Forward Voltage, VF = 3.4 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
The FFPF08S60SN is a STEALTH™ II diode with soft recovery
characteristics. It is silicon nitride passivated ion-implanted
epitaxial planar construction. This device is intended for use as
freewheeling of boost diode in switching power supplies and
other power swithching applications. Their low stored charge
and hyperfast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
RoHS Compliant
Applications
•
•
•
General Purpose
SMPS, Power Switching Circuits
Boost Diode in Continuous Mode Power Factor Corrections
TO-220F-2L
1. Cathode
2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Parameter
Ratings
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
600
8
VRWM
VR
V
V
IF(AV)
Average Rectified Forward Current
@ TC = 60oC
A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
IFSM
60
A
TJ, TSTG
Operating and Storage Temperature Range
-65 to +175
oC
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
Unit
oC/W
RθJC
6.8
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size
Tape Width Quantity
FFPF08S60SNTU
FFPF08S60SN
TO-220F-2L
Tube
N/A
N/A
50
©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. C2
1
www.fairchildsemi.com
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
IF = 8 A
IF = 8 A
TC = 25oC
T
-
-
2.7
2.1
3.4
-
VF1
V
C = 125oC
C = 25oC
VR = 600 V
VR = 600 V
T
-
-
-
-
100
500
IR1
μA
TC = 125oC
TC = 25oC
trr
IF = 1 A, diF/dt = 100 A/μs, VR = 30 V
-
13
-
ns
trr
Irr
-
-
-
-
15
2.5
0.4
19
25
-
-
ns
A
IF = 8 A, diF/dt = 200 A/μs, VR = 390 V
TC = 25oC
S factor
Qrr
-
nC
trr
Irr
-
-
-
-
32
3.8
0.7
62
-
-
-
-
ns
A
IF = 8 A, diF/dt = 200 A/μs, VR = 390 V
TC = 125oC
S factor
Qrr
nC
mJ
WAVL
Avalanche Energy ( L = 40 mH)
10
-
-
Notes:
1: Pulse: Test Pulse width = 300 μs, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. C2
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 4. Typical Reverse Current vs.
Figure 3. Typical Forward Voltage Drop
Reverse Voltage
vs. Forward Current
20
40
10
10
TC = 125oC
TC = 125oC
1
TC = 75oC
TC = 75oC
1
TC = 25oC
0.1
0.01
TC = 25oC
0.1
0.001
0
1
2
3
4
5
10
100
200
300
400
500
600
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 5.Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
vs. di/dt
50
40
IF = 8A
Typical Capacitance
at 0V = 43 pF
40
TC = 125oC
30
30
20
10
0
TC = 75oC
20
TC = 25oC
10
100
200
300
400
500
600
0.1
1
10
100
Reverse Voltage, VR [V]
diF/dt [A/μs]
Figure 8. Forward Current Derating Curve
Figure 7. Typical Reverse Recovery
Current vs. di/dt
10
12
8
9
6
3
0
T
= 125oC
6
4
2
0
C
TC = 75oC
T
= 25oC
C
IF = 8A
500 600
100
200
300
400
25
50
75
100
125
150
Case temperature, TC [oC]
diF/dt [A/μs]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. C2
3
Mechanical Dimensions
Figure 9. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. C2
4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
FRFET
®*
®
®
®
Awinda
AX-CAP *
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
BitSiC™
®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
TinyCalc™
®
Green FPS™ e-Series™
Gmax™
GTO™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
IntelliMAX™
Current Transfer Logic™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
®
DEUXPEED
TranSiC™
Dual Cool™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
®
EcoSPARK
®
EfficentMax™
ESBC™
SerDes™
SMART START™
MicroPak™
MicroPak2™
MillerDrive™
Solutions for Your Success™
SPM
®
®
®
®
STEALTH™
UHC
Fairchild
®
®
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SuperFET
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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XS™
Fairchild Semiconductor
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®
MotionGrid
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
®
MTi
MTx
MVN
FACT
FAST
®
®
®
®
SupreMOS
FastvCore™
FETBench™
FPS™
®
mWSaver
SyncFET™
Sync-Lock™
OptoHiT™
Xsens™
仙童 ™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I71
©2008 Fairchild Semiconductor Corporation
FFP008S60SN Rev. C2
www.fairchildsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
FFPF08S60ST
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220, ROHS COMPLIANT, TO-220F, 2 PIN
FAIRCHILD
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