FFSD0865B [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK;
| 型号： | FFSD0865B |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, DPAK |
| 文件： | 总6页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
8 A, 650 V, D2, DPAK
1, 3 Cathode
2 Anode
Schottky Diode
FFSD0865B
3
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
DPAK
CASE 369AS
Features
MARKING DIAGRAM
• Max Junction Temperature 175°C
• Avalanche Rated 33 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
FFS
D0865B
AYWWZZ
• No Reverse Recovery/No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
FFSD0865B
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
650
33
Unit
V
Peak Repetitive Reverse Voltage
V
RRM
Single Pulse Avalanche Energy (T = 25°C,
L(pk)
E
AS
mJ
J
I
= 11.5 A, L = 0.5 mH, V = 50 V)
Continuous Rectified Forward
Current
T
T
< 153
< 135
I
8.0
11.6
577
A
A
C
F
C
Non−Repetitive Peak Forward
Surge Current
T
= 25°C,
= 10 ms
I
FM
C
P
t
T
= 150°C,
= 10 ms
538
42
C
P
t
Non−Repetitive Forward Surge
Current (Half−Sine Pulse)
T
= 25°C
I
A
C
FSM
t
P
= 8.3 ms
Power Dissipation
T
= 25°C
P
tot
91
15
W
C
T
C
= 150°C
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2023 − Rev. 3
FFSD0865B/D
FFSD0865B
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
R
1.64
°C/W
q
JC
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ON CHARACTERISTICS
V
Forward Voltage
I = 8.0 A, T = 25°C
−
−
−
−
−
−
1.39
1.55
1.71
0.5
1.7
2.0
2.4
40
V
F
F
J
I = 8.0 A, T = 125°C
F
J
I = 8.0 A, T = 175°C
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
mA
J
= 650 V, T = 125°C
1.0
80
J
= 650 V, T = 175°C
2.0
160
J
CHARGES, CAPACITANCES & GATE RESISTANCE
Q
Total Capacitive Charge
V
C
V
R
V
R
V
R
= 400 V
−
−
−
−
22
336
39
−
−
−
−
nC
pF
C
C
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
tot
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PART MARKING AND ORDERING INFORMATION
†
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FFSD0865B
FFSD0865B
DPAK
Tape & Reel
330 mm
16 mm
2500 units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FFSD0865B
TYPICAL CHARACTERISTICS
10−6
8
6
4
2
0
T = −55o C
J
T = 25oC
J
10−7
T = 75oC
J
T = 125oC
J
T = 175oC
J
T = 175o C
J
T = 125oC
10−8
J
T = 75oC
J
T = 25oC
J
T = −55oC
J
10−9
100
0.0
0.4
0.8
1.2
1.6
2.0
200
300
400
500
600 650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
120
100
75
D = 0.1
90
60
30
0
D = 0.2
50
D = 0.3
D = 0.5
25
D = 0.7
D = 1
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
, CASE TEMPERATURE (oC)
, CASE TEMPERATURE (oC)
T
T
C
C
Figure 3. Current Derating
Figure 4. Power Derating
30
20
10
0
1000
100
10
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
V , REVERSE VOLTAGE (V)
R
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSD0865B
TYPICAL CHARACTERISTICS (CONTINUED)
8
6
4
2
0
0
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
0.01
D=0.01
SINGLE PULSE
10−5
0.001
10−6
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 8. Junction−to−Case Transient Thermal Response
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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