FFSH30120ADN-F155 [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, TO-247-3L;型号: | FFSH30120ADN-F155 |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, TO-247-3L 局域网 功效 测试 光电二极管 |
文件: | 总6页 (文件大小:327K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
30 A, 1200 V, D1, TO-247-3L
1. Anode
3. Anode
2. Cathode/
Case
Schottky Diode
FFSH30120ADN-F155
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
3
TO−247−3LD
CASE 340CH
Features
• Max Junction Temperature 175°C
• Avalanche Rated 145 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
MARKING DIAGRAM
FFSH
30120ADN
AYWWG
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
FFSH30120ADN
A
YWW
G
= Specific Device Code
= Assembly Plant Code
= Date Code (Year & Week)
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
FFSH30120ADN−F155/D
January, 2023 − Rev. 4
FFSH30120ADN−F155
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (per leg)
C
Symbol
Parameter
Value
1200
145
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 148°C
E
AS
mJ
A
I
F
15* / 30**
1030
990
C
I
Non-Repetitive Peak Forward Surge Current
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F,Max
A
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half−Sine Pulse, t = 8.3 ms
125
A
F,SM
p
I
Half−Sine Pulse, t = 8.3 ms
50
A
F,RM
p
P
T
= 25°C
195
W
W
°C
Ncm
TOT
C
C
T
= 150°C
32
T , T
J
Operating and Storage Temperature Range
−55 to +175
60
STG
TO−247 Mounting Torque, M3 Screw
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: * Per leg, ** Per Device.
1. E of 145 mJ is based on starting T = 25°C, L = 0.5 mH, I = 24 A, V = 150 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.77* / 0.32**
°C/W
q
JC
NOTE: * Per leg, ** Per Device.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (per leg)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 15 A, T = 25°C
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
V
F
C
I = 15 A, T = 125°C
−
F
C
I = 15 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25°C
−
mA
C
= 1200 V, T = 125°C
−
−
C
= 1200 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
95
936
86
68
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Quantity
FFSH30120ADN−F155
FFSH30120ADN
TO−247−3LD
Tube
30 Units
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2
FFSH30120ADN−F155
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED (PER LEG))
J
1
30
20
10
T = −55°C
J
T = 25°C
T = 175°C
J
J
0
10
T = 75°C
J
T = 125°C
J
T = 125°C
J
−1
10
10
10
T = 175°C
J
10
0
−2
−3
T = 75°C
J
T = 25°C
J
T = −55°C
J
0
1
2
3
4
200
400
600
800
1000
1200
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
1.0
0.8
0.6
0.4
0.2
0.0
D = 0.1
T = −55°C
J
J
T = 25°C
T = 75°C
J
150
100
50
T = 125°C
J
T = 175°C
J
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
0
1000
1100
1200
1300
1400
1500
25
50
75
100
125
150
175
V , Reverse Voltage (V)
R
T , Case Temperature (5C)
C
Figure 3. Reverse Characteristics
Figure 4. Current Derating
200
150
100
120
100
80
60
40
20
0
50
0
0
200
400
600
800
1000
25
50
75
100
125
150
175
V , Reverse Voltage (V)
T , Case Temperature (5C)
R
C
Figure 5. Power Derating
Figure 6. Capacitive Charge vs. Reverse
Voltage
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3
FFSH30120ADN−F155
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED (PER LEG))
J
5000
1000
40
30
20
100
10
10
0
0.1
1
10
100
1000
0
200
400
600
800
1000
V , Reverse Voltage (V)
R
V , Reverse Voltage (V)
R
Figure 7. Capacitance vs. Reverse Voltage
Figure 8. Capacitance Stored Energy
2
1
0.5
P
DM
0.2
t
1
0.1
t
2
0.05
0.02
0.01
NOTES:
(t) = r(t) × R
Z
q
JC
q
JC
R
= 0.77°C/W
0.1
q
JC
Peak T = P
× Z (t) + T
q
JC C
J
DM
SINGLE PULSE
0.05
Duty Cycle, D = t / t
1
2
−4
−3
−2
−1
10
10
10
t, Rectangular Pulse Duration (s)
10
1
Figure 9. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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相关型号:
FFSH40120ADN-F155
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, TO-247-3L
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