FFSP0465A [ONSEMI]
SiC 二极管，650V，4A，TO-220-2;
| 型号： | FFSP0465A |
| 厂家： | 
ONSEMI |
| 描述： | SiC 二极管，650V，4A，TO-220-2 二极管 |
| 文件： | 总6页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
4 A, 650 V, D1, TO-220-2L
ELECTRICAL CONNECTION
FFSP0465A
Description
1. Cathode
2. Anode
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
Features
TO−220−2LD
CASE 340BB
• Max Junction Temperature 175°C
• Avalanche Rated 25 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
MARKING DIAGRAM
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
AXYYKK
FFSP
0465A
A
= Assembly Plant Code
XYY
KK
FFSP0465A
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2023 − Rev. 5
FFSP0465A/D
FFSP0465A
ABSOLUTE MAXIMUM RATINGS
(T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
FFSP0465A Unit
V
Peak Repetitive Reverse Voltage
650
25
4
V
mJ
A
RRM
E
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
AS
I
F
@ T < 163°C
C
Continuous Rectified Forward Current
8.6
@ T < 135°C
C
I
Non−Repetitive Peak Forward Surge Current
360
330
38
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
I
Non−Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half−Sine Pulse,
A
A
F, SM
t = 8.3 ms
p
I
Half−Sine Pulse,
18
F, RM
t = 8.3 ms
p
P
tot
T
C
T
C
= 25°C
75
12.5
W
= 150°C
T , T
Operating and Storage Temperature Range
−55 to +175
J
STG
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 25 mJ is based on starting T = 25°C, L = 0.5 mH, I = 10 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Unit
Ratings
°C/W
R
Thermal Resistance, Junction to Case, Max.
2.0
θ
JC
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
I = 4 A, T = 25°C
Min.
−
Typ.
1.50
1.6
1.72
−
Max.
Unit
V
F
Forward Voltage
Reverse Current
1.75
2.0
2.4
200
400
600
−
V
F
C
I = 4 A, T = 125°C
−
F
C
I = 4 A, T = 175°C
−
F
C
I
R
mA
V
R
= 650 V, T = 25°C
−
C
V
R
V
R
= 650 V, T = 125°C
−
−
C
= 650 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
16
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
258
29
−
−
−
−
21
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FFSP0465A
TO−220−2LD
Tube
N/A
N/A
50 Units
FFSP0465A
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2
FFSP0465A
TYPICAL CHARACTERISTICS T = 25°C UNLESS OTHERWISE NOTED
J
10−6
4
3
2
1
0
10−7
TJ = 175 oC
TJ = −55oC
TJ = 25 o
10−8
TJ = 75 o
C
C
TJ = 75 o
C
T
J = 125 o
C
TJ = 25 o
C
T
J = 125 oC
TJ = 175 o
C
TJ = −55oC
10−9
0.0
0.5
1.0
1.5
2.0
200
300
400
500
600 650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
80
60
40
20
0
80
60
40
20
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
C
T , CASE TEMPERATURE (5C)
C
Figure 3. Current Derating
Figure 4. Power Derating
25
20
15
10
5
1000
100
10
0
0
100
200
300
400 500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP0465A
TYPICAL CHARACTERISTICS T = 25°C UNLESS OTHERWISE NOTED (CONTINUED)
J
5
4
3
2
1
0
0
100
200
300 400
500 600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
PDM
0.1
0.01
t1
0.5
t2
0.2
0.1
NOTES:
0.05
Z
(t) = r(t) x R
o
qJC
qJC
0.02
R
= 2.0 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
0.01
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.001
10−6
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
4.09
3.50
M
M
B A
0.36
10.67
9.65
B
A
8.89
6.86
3.43
2.54
1.40
0.51
6.86
5.84
7°
3°
13.40
12.19
16.51
14.22
16.15
15.75
9.40
8.38
5°
3°
5°
3°
6.35 MAX
1
2
0.60 MAX
C
14.73
13.60
1.65
1.25
1.91
0.61
0.33
2.54
5.08
2.92
2.03
1.02
0.38
M
0.36
C
A
B
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.80
4.30
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13832G
TO−220−2LD
PAGE 1 OF 1
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