FGA50N100BNTD2 [ONSEMI]
IGBT，1000V，NPT 沟槽;
| 型号： | FGA50N100BNTD2 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1000V，NPT 沟槽 双极性晶体管 |
| 文件： | 总11页 (文件大小：455K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2013
FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
General Description
•
•
•
•
•
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
High Input Impedance
Built-in Fast Recovery Diode
RoHS Compliant
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
Applications
•
UPS, Welder
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
1000
± 25
50
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
IF
IFM
PD
Collector Current
35
Pulsed Collector Current
200
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
30
15
A
A
A
150
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 25oC
@ TC = 100oC
156
63
W
W
oC
oC
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.8
Unit
oC/W
oC/W
oC/W
-
-
-
1.2
40.0
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size
Tape Width Quantity
FGA50N100BNTD2 FGA50N100BNTD2
TO-3P
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
1000
-
-
-
-
V
Collector Cut-Off Current
G-E Leakage Current
VCE = 1000 V, VGE = 0 V
VGE = ±25 V, VCE = 0 V
-
-
1.0
mA
nA
IGES
±500
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 60 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
4.0
-
5.5
1.5
2.5
7.0
1.8
2.9
V
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
3.3
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
6000
260
-
-
-
pF
pF
pF
V
CE = 10 V VGE = 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
200
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
34
68
-
ns
ns
V
R
CC = 600 V, IC = 60 A,
G = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
Rise Time
-
Turn-Off Delay Time
Fall Time
243
65
-
100
350
-
ns
ns
Qg
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
257
45
nC
nC
nC
V
V
CE = 600 V, IC = 60 A,
GE = 15 V, TC = 25oC
Qge
Qgc
95
-
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
IF = 15 A
IF = 60 A
-
-
2.9
4.0
3.2
4.7
V
V
VFM
Diode Forward Voltage
trr
IR
Diode Reverse Recovery Time
Instantaneous Reverse Current
IF = 60 A, diF/dt = 100 A/us
VRRM = 1000 V
-
-
60
-
75
2
ns
A
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
200
TC = 25oC
20V
TC = 125oC
20V
10V
9V
15V
10V
15V
160
120
80
160
120
80
40
0
9V
8V
8V
7V
7V
40
VGE = 6V
VGE = 6V
8 10
0
0
2
4
6
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
200
200
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
160
160
120
120
80
40
0
80
40
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4.5
20
Common Emitter
VGE = 15V
90A
Common Emitter
TC = -40oC
16
12
8
60A
3.0
30A
60A
IC = 10A
30A
4
90A
1.5
1.0
IC = 10A
0
25
50
75
100
125
0
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
60A
60A
90A
30A
90A
30A
4
4
IC = 10A
IC = 10A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
8000
Common Emitter
TC = 25oC
12
6000
VCC = 200V
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
9
400V
4000
2000
0
600V
6
3
0
Cres
Coes
0
55
110
165
220
275
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Load Current vs. Frequency
500
100
10
10s
100s
1ms
1
10 ms
DC
*Notes:
1. TC = 25oC
0.1
2. TJ = 150oC
3. Single Pulse
0.01
3000
1000
1
10
100
Collector-Emitter Voltage, VCE [V]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
2000
1000
td(off)
100
tr
100
tf
td(on)
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
IC = 60A
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
10
10
10
10
20
30
40
50
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs.
Collector Current
Figure 16. Turn-off Characteristics vs.
Collector Current
200
1000
100
td(off)
tr
Common Emitter
VGE = 15V, RG = 10
td(on)
TC = 25oC
100
tf
TC = 125oC
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
10
10
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Fig 18. Switching Loss vs. Collector Current
50
30
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
10
TC = 25oC
Eon
TC = 125oC
Eon
10
Eoff
1
Common Emitter
Eoff
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
1
10
0.1
20
30
40
50
10 20 30 40 50 60 70 80 90 100
Collector Current, IC [A]
Gate Resistance, RG []
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
F i g u r e 1 9 . T u r n o f f S w i t c h i n g S O A C h a r a c t e r i s i c s
F i g u r e 2 0 . F o r w a r d C h a r a c t e r i s t i c s
200
100
250
100
TJ = 125oC
10
TJ = 25oC
10
1
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 125oC
1
0.1
3000
1000
1
10
100
0
1
2
3
4
5
6
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
Figure 21. Reverse Current
Figure 22. Reverse Recovery Characteristics vs.
di /dt
F
300
100
80
60
40
20
0
10
Trr
TJ = 125oC
8
10
Irr
6
1
4
0.1
2
0.01
TJ = 25oC
IF = 60A
TC = 25oC
0
1E-3
20 40 60 80 100 120 140 160 180 200
50
200
400
600
800
1000
Reverse Voltage, VR [V]
diF/dt[A/s]
Figure 23. Reverse Recovery Characteristics vs.
Forward Current
80
70
60
6
4
2
Trr
Irr
diF/dt = 100A/s
C = 25oC
T
10
20
30
40
50
60
Forward Current,IF[A]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 24.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
PDM
0.01
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
7
www.fairchildsemi.com
FGA50N100BNTD2 Rev. C1
Mechanical Dimensions
Figure 25. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
8
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
9
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FGA50N100BNTDTU
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-3P, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明