FGAF40N60SMD [ONSEMI]
IGBT，600V，40A，场截止;
| 型号： | FGAF40N60SMD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，40A，场截止 局域网 电动机控制 栅 双极性晶体管 |
| 文件： | 总11页 (文件大小：508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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December 2016
FGAF40N60SMD
600 V, 40 A Field Stop IGBT
Features
General Description
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 175oC
Positive Temperaure Co-efficient for easy Parallel Operating
High Current Capability
Using novel field stop IGBT technology, ON semiconductor’s
new series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder and PFC applica-
tions where low conduction and switching losses are essential.
Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
High Input Impedance
Fast Swiching: EOFF = 6.5 uJ/A
Tightened Parameter Distribution
RoHS Compliant
Applications
•
Sewing Machine, CNC
•
Home Appliances, Motor-Control
C
G
E
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Unit
V
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
20
V
Collector Current
@ TC = 25oC
@ TC = 100oC
80*
A
IC
ICM (1)
IF
IFM (1)
PD
Collector Current
40*
A
Pulsed Collector Current
Diode Forward Current
120*
A
@ TC = 25oC
@ TC = 100oC
40*
A
Diode Forward Current
20*
A
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
120*
A
@ TC = 25oC
@ TC = 100oC
115
W
W
oC
oC
58
TJ
-55 to +175
-55 to +175
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
*Drain current limited by maximum junction temperature
1: Repetitive rating: Pulse width limited by max. junction temperature
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
1
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
1.3
Unit
oC/W
oC/W
oC/W
RJC(IGBT)
RJC(Diode)
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
-
3.27
40
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGAF40N60SMD
FGAF40N60SMD
TO-3PF
-
-
30
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
600
-
-
-
-
V
BVCES
TJ
Temperature Coefficient of Breakdown
0.6
V/oC
V
GE = 0V, IC = 250A
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
-
-
250
A
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250A, VCE = VGE
3.5
-
4.5
1.9
6.0
-
V
V
I
C = 40A, VGE = 15V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
TC = 175oC
-
2.1
-
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
1880
180
50
-
-
-
pF
pF
pF
VCE = 30V, VGE = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
20
-
ns
ns
Rise Time
-
Turn-Off Delay Time
Fall Time
92
-
ns
V
CC = 400V, IC = 40A,
RG = 6, VGE = 15V,
13
17
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.87
0.26
1.13
15
-
mJ
mJ
mJ
ns
0.34
-
-
-
-
-
-
-
-
22
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
116
16
ns
V
R
CC = 400V, IC = 40A,
G = 6, VGE = 15V,
ns
Inductive Load, TC = 175oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
0.97
0.60
1.57
mJ
mJ
mJ
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
2
Electrical Characteristics of the IGBT (Continued)
Symbol
Qg
Parameter
Test Conditions
Min.
Typ.
119
13
Max Unit
Total Gate Charge
-
-
-
-
-
-
nC
nC
nC
V
CE = 400V, IC = 40A,
VGE = 15V
Qge
Gate to Emitter Charge
Gate to Collector Charge
Qgc
58
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
2.3
Max Unit
T
C = 25oC
-
-
-
-
-
-
-
-
VFM
Diode Forward Voltage
IF = 20A
V
TC = 175oC
1.67
48.9
36
-
Erec
trr
Reverse Recovery Energy
T
T
C = 175oC
C = 25oC
-
-
-
-
-
uJ
ns
Diode Reverse Recovery Time
IF =20A, dIF/dt = 200A/s
TC = 175oC
TC = 25oC
TC = 175oC
110
46.8
445
Qrr
Diode Reverse Recovery Charge
nC
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
VGE=20V
VGE=20V
15V
12V
15V
90
60
30
0
90
60
30
0
12V
10V
10V
8V
TC = 25oC
TC = 175oC
8 10
8V
0
2
4
6
8
10
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
TC = 25oC
TC = 175oC
90
90
60
30
0
60
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
30
0
0
3
6
9
12
15
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4
3
2
1
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
80A
80A
40A
40A
IC = 20A
8
IC = 20A
4
0
25
50
75
100
125
150
175
4
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
12
8
16
12
8
80A
80A
40A
40A
4
4
IC = 20A
IC = 20A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
4000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
400V
TC = 25oC
12
VCC = 200V
3000
300V
9
Cies
2000
6
3
0
1000
Coes
Cres
0
0.1
0
40
80
120
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
100
10s
tr
100s
1ms
10 ms
10
td(on)
DC
10
1
0.1
Common Emitter
VCC = 400V, VGE = 15V
*Notes:
1. TC = 25oC
IC = 40A
TC = 25oC
TC = 175oC
2. TJ =175oC
3. Single Pulse
0.01
1
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
5
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
1000
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
td(off)
TC = 175oC
100
10
1
100
tr
tf
Common Emitter
10
td(on)
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
1
20
30
40
50
60
70
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG []
Figure 15. Turn-off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
1000
5
td(off)
100
Eon
1
tf
Eoff
Common Emitter
VCC = 400V, VGE = 15V
10
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
IC = 40A
TC = 25oC
TC = 175oC
1
20
0.1
30
40
50
60
70
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG []
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
200
6
100
10
1
Eon
1
Eoff
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
Safe Operating Area
VGE = 15V, TC = 175oC
0.1
20
1
10
100
1000
30
40
50
60
70
80
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
6
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Power Dissipation
50
120
90
60
30
0
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
40
30
20
10
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Case Temperature, TC [oC]
Case Temperature, TC [oC]
Figure 21. Load Current Vs. Frequency
Figure 22. Forward Characteristics
100
10
1
100
VCC = 400V
90
load Current : peak of square wave
80
70
60
50
40
30
20
10
0
Duty cycle : 50%
TC = 100oC
TC = 175oC
Powe Dissipation = 58 W
Tc = 100oC
TC = 25oC
0
1
2
3
4
1k
10k
100k
1M
Forward Voltage, VF [V]
Switching Frequency, f [Hz]
Figure 23. Reverse Current
Figure 24. Stored Charge
1000
700
600
500
400
300
200
100
0
TC = 25oC
TC = 175oC
TC = 175oC
100
10
1
TC = 100oC
0.1
di/dt = 100A/s
di/dt = 200A/s
TC = 25oC
300
0.01
1E-3
0
100
200
400
500
600
0
5
10 15 20 25 30 35 40 45
Forwad Current, IF [A]
Reverse Voltage, VR [V]
Semiconductor Components Industries, LLC, 2016
FGAF40N60SMD • Rev. 1.4
www.fairchildsemi.com
www.onsemi.com
7
Typical Performance Characteristics
Figure 25. Reverse Recovery Time
200
150
100
50
TC = 25oC
TC = 175oC
di/dt = 100A/s
di/dt = 200A/s
0
0
5
10 15 20 25 30 35 40 45
Forward Current, IF [A]
Figure 26.Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1
0.01
1E-3
0.05
0.02
0.01
PDM
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 27.Transient Thermal Impedance of Diode
4
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10 100
Rectangular Pulse Duration [sec]
Semiconductor Components Industries, LLC, 2016
www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4
www.onsemi.com
8
15.70
15.30
9.90
3.20
2.80
3.80
3.40
4.60
4.40
7.75
10.20
9.80
23.20
22.80
26.70
26.30
16.70
16.30
16.70
16.30
14.70
14.30
2.20
1.80
2.70
2.30
3
2
1
1.93
2.20
1.80
(3X)
15.00
14.60
4.20
3.80
3.50
3.10
0.95
0.65
(3X)
1.10
0.80
5.75
5.15
5.75
5.15
5.70
5.30
3.50
3.10
NOTES:
A. THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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