FGB3440G2-F085 [ONSEMI]
IGBT，400V，25A，1.30V，335mJ，EcoSPARK® II，N 沟道点火;
| 型号： | FGB3440G2-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，400V，25A，1.30V，335mJ，EcoSPARK® II，N 沟道点火 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：1260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGB3440G2-F085 / FGD3440G2-F085
FGP3440G2-F085
®
EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT
Features
Applications
Automotive lgnition Coil Driver Circuits
SCIS Energy = 335mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Coil On Plug Applications
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AB
E
D²-Pak
C
G
COLLECTOR
G
E
R1
GATE
JEDEC TO-252AA
D-Pak
R2
G
EMITTER
COLLECTOR
(FLANGE)
E
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
400
28
V
335
mJ
mJ
A
195
IC25
Collector Current Continuous, at VGE = 4.0V, TC = 25°C
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
Gate to Emitter Voltage Continuous
26.9
25
IC110
VGEM
A
±10
V
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
166
W
PD
1.1
W/oC
oC
oC
oC
oC
kV
TJ
Operating Junction Temperature Range
-40 to +175
-40 to +175
300
TSTG
TL
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Max. Lead Temp. for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at100pF, 1500Ω
TPKG
ESD
260
4
Publication Order Number:
@2014 Semiconductor Components Industries, LLC.
August-2017, Rev.3
FGB3440G2-F085/D
Package Marking and Ordering Information
Device Marking
FGB3440G2
FGD3440G2
FGP3440G2
Device
Package
Reel Size
330mm
330mm
Tube
Tape Width
Quantity
FGB3440G2-F085
FGD3440G2-F085
FGP3440G2-F085
TO-263AB
TO-252AA
TO-220AB
24mm
16mm
N/A
800
2500
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
I
CE = 2mA, VGE = 0,
BVCER Collector to Emitter Breakdown Voltage RGE = 1KΩ,
TJ = -40 to 150oC
CE = 10mA, VGE = 0V,
BVCES Collector to Emitter Breakdown Voltage RGE = 0,
TJ = -40 to 150oC
370 400 430
390 420 450
V
I
V
V
ICE = -20mA, VGE = 0V,
TJ = 25°C
BVECS Emitter to Collector Breakdown Voltage
BVGES Gate to Emitter Breakdown Voltage
28
-
-
IGES = ±2mA
±12 ±14
-
25
1
V
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
-
-
-
μA
mA
V
CE = 250V, RGE=1KΩ
ICER
IECS
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
-
-
-
1
V
EC = 24V,
mA
-
-
-
120
-
40
-
R1
R2
Series Gate Resistance
Ω
Ω
Gate to Emitter Resistance
10K
30K
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,
L = 3.0 mHy, VGE = 5V
TJ = 25oC
TJ = 150oC
TJ = 150oC
-
-
-
1. 1
1. 2
V
V
V
1.3 1.45
1.6 1.75
ESCIS
Self Clamped Inductive Switching
TJ = 25oC
-
-
335
mJ
RG = 1KΩ, (Note 1)
Notes:
1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting
TJ=25 oC; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp
.
2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting
TJ=150 oC; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp.
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2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Dynamic Characteristics
ICE = 10A, VCE = 12V,
GE = 5V
QG(ON) Gate Charge
-
24
-
nC
V
TJ = 25oC
TJ = 150oC
1.3
1.7
2.2
1.8
-
VGE(TH) Gate to Emitter Threshold Voltage
ICE = 1mA, VCE = VGE,
VCE = 12V, ICE = 1 0 A
V
V
0.75 1.2
VGEP
Gate to Emitter Plateau Voltage
-
2 . 8
Switching Characteristics
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
GE = 5V, RG = 1KΩ
TJ = 25oC,
-
-
-
-
1.0
2.0
5 . 3
2.3
4
7
μs
μs
μs
μs
V
trR
Current Rise Time-Resistive
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH,
1 5
15
VGE = 5V, RG = 1KΩ
I
tfL
Current Fall Time-Inductive
CE =6.5A, TJ = 25oC,
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
0.9 oC/W
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3
Typical Performance Curves
100
30
20
10
0
RG = 1KΩ, VGE = 5V, VCE = 100V
RG = 1KΩ, VGE = 5V, VCE = 100V
TJ = 25oC
TJ = 25oC
10
TJ = 150oC
TJ = 150oC
SCIS Curves valid for V
clamp
Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
1
10
100
tCLP, TIME IN CLAMP (μS)
1000
0
3
6
9
12
15
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.50
ICE = 6A
ICE = 10A
VGE = 3.7V
1.45
VGE = 4.0V
VGE = 4.0V
1.15
1.40
1.35
1.30
1.25
1.20
1.15
1.10
VGE = 3.7V
1.10
VGE = 8V
VGE = 5V
VGE = 4.5V
VGE = 5V
1.05
VGE = 8V
VGE = 4.5V
1.00
-75 -50 -25
0
25 50 75 100 125 150 175
-75 -50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
TJ, JUNCTION TEMPERTURE (oC)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
30
30
VGE = 8.0V
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
20
20
VGE = 3.7V
VGE = 3.7V
10
10
TJ = -40oC
TJ = 25oC
0
0
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
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4
(Continued)
Typical Performance Curves
30
30
20
10
0
VGE = 8.0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VCE = 5V
20
VGE = 3.7V
TJ = 175oC
10
0
TJ = 25oC
TJ = -40oC
3
TJ = 175oC
3 4
0
1
2
1
2
4
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
30
2.0
1.8
1.6
1.4
1.2
1.0
VGE = 4.0V
VCE = VGE
= 1mA
I
CE
20
10
0
25
50
75
100
125
150
175
-50 -25
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
10000
12
Resistive tOFF
Inductive tOFF
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
10
8
1000
100
10
6
VCES = 300V
4
1
2
Resistive tON
VCES = 250V
0.1
-50 -25
0
25
0
25 50 75 100 125 150 175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Leakage Current vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
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5
(Continued)
Typical Performance Curves
2000
1600
10
8
ICE = 10A, TJ = 25oC
f = 1MHz
VGE = 0V
VCE = 6V
CIES
1200
6
VCE = 12V
800
4
CRES
400
2
COES
0
0
5
10
15
20
25
0
10
20
30
40
50
60
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
Figure 14. Gate Charge
440
ICER = 10mA
420
TJ = -40oC
TJ = 25oC
400
380
TJ = 175oC
10
100
1000
6000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Break down Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.2
P
DM
0.1
0.05
0.02
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
0.01
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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6
Test Circuit and Waveforms
L
VCC
R
or
L
LOAD
C
C
RG
G
RG = 1KΩ
PULSE
GEN
+
-
G
DUT
E
VCC
DUT
5V
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
SCIS
C
V
CC
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
SCIS
V
G
CC
DUT
V
GE
E
t
P
I
0V
SCIS
0
0.01Ω
t
AV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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