概述
规格参数
数据手册FGH40N60UFDTU 概述
IGBT，600V，40A，场截止 IGBT晶体管 IGBT
FGH40N60UFDTU 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 包装说明： | ROHS COMPLIANT PACKAGE-3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.29.00.95 |
| Factory Lead Time： | 1 week | 风险等级： | 0.79 |
| 其他特性： | LOW CONDUCTION LOSS | 外壳连接： | COLLECTOR |
| 最大集电极电流 (IC)： | 80 A | 集电极-发射极最大电压： | 600 V |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最大降落时间（tf）： | 100 ns |
| 门极发射器阈值电压最大值： | 6.5 V | 门极-发射极最大电压： | 20 V |
| JEDEC-95代码： | TO-247AB | JESD-30 代码： | R-PSFM-T3 |
| JESD-609代码： | e3 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 290 W |
| 认证状态： | Not Qualified | 子类别： | Insulated Gate BIP Transistors |
| 表面贴装： | NO | 端子面层： | Tin (Sn) |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | POWER CONTROL |
| 晶体管元件材料： | SILICON | 标称断开时间 (toff)： | 190 ns |
| 标称接通时间 (ton)： | 110 ns | Base Number Matches： | 1 |
FGH40N60UFDTU 数据手册
通过下载FGH40N60UFDTU数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载IGBT - Field Stop
600 V, 40 A
FGH40N60UFD
Description
Using novel Field Stop IGBT technology, ON Semiconductor’s
field stop IGBTs offer the optimum performance for solar inverter,
UPS, welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
www.onsemi.com
V
I
C
CES
Features
600 V
40 A
• High Current Capability
C
E
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.8 V @ I = 40 A
C
CE(sat)
• This Device is Pb−Free and is RoHS Compliant
G
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
UFD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40N60UFD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
January, 2020 − Rev. 2
FGH40N60UFD/D
FGH40N60UFD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
600
V
20
V
Transient Gate−to−Emitter Voltage
30
80
V
I
C
Collector Current
T
C
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 25°C
A
40
A
I
(Note 1)
Pulsed Collector Current
120
A
CM
P
D
Maximum Power Dissipation
290
W
W
°C
°C
°C
= 100°C
116
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
−
Max.
0.43
1.45
40
Unit
R
R
_C/W
_C/W
_C/W
q
JC
(Diode)
−
q
JC
R
−
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Qty per Tube
FGH40N60UFDTU
FGH40N60UFD
TO−247
Tube
N/A
N/A
30
www.onsemi.com
2
FGH40N60UFD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
V/°C
mA
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.6
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
4.0
5.0
1.8
6.5
2.4
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 40 A, V = 15 V,
−
CE(sat)
GE
= 40 A, V = 15 V,
GE
−
2.0
−
V
T
= 125°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
2110
200
60
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
24
44
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
112
30
−
ns
d(off)
T
f
60
−
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.19
0.46
1.65
mJ
mJ
mJ
on
off
E
−
E
−
ts
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
24
45
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 125°C
C
T
Turn−Off Delay Time
Fall Time
120
40
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.2
0.69
1.89
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 40 A,
Q
Total Gate Charge
−
−
−
120
14
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
58
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH40N60UFD
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
= 25°C
Min
−
Typ
1.95
1.85
45
Max
2.6
−
Unit
I = 20 A
T
C
V
V
FM
Diode Forward Voltage
F
T
= 125°C
T = 25°C
C
−
C
I = 20 A,
ns
T
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
−
−
F
di /dt = 200 A/ms
F
T
= 125°C
= 25°C
−
140
75
−
C
T
nC
Q
−
−
C
rr
T
C
= 125°C
−
375
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Collector−Emitter Voltage, V (V)
CE
Gate−Emitter Voltage,V (V)
GE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
Gate−Emitter Voltage, V (V)
Case Temperature T (5C)
GE
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
www.onsemi.com
5
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
GE
Figure 7. Saturation Voltage vs VGE
Figure 8. Saturation Voltage vs VGE
Collector−Emitter Voltage, V (V)
Gate Charge, Qg(nC)
CE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Collector−Emitter Voltage, V (V)
CE
Gate Resistance, R (W)
G
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics
vs. Gate Resistance
www.onsemi.com
6
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gate Resistance, R (W)
G
Collector Current, I (A)
C
Figure 14. Turn−on Characteristics
Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance
Collector Current, I (A)
C
Gate Resistance, R (W)
G
Figure 15. Turn−off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
Collector Current, I (A)
C
Collector−Emitter Voltage, V (V)
CE
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn Off Switching SOA Characteristics
www.onsemi.com
7
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Forward Voltage, V (V)
Reverse Voltage, V (V)
F
R
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Forward Current, I (A)
Forward Current, I (A)
F
F
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
PDM
t1
t2
Rectangular Pulse Duration (sec)
Figure 23. Transient Thermal Impedance of IGBT
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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FGH40N60UFDTU 相关器件
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| FGH40N60UFDTU-SN00006 | FAIRCHILD | DESIGN/PROCESS CHANGE NOTIFICATION | 获取价格 |
|
| FGH40N60UFTU | FAIRCHILD | 600 V, 40 A Field Stop IGBT | 获取价格 |
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| FGH40N60UFTU | ONSEMI | 600V，40A，场截止 IGBT | 获取价格 |
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| FGH40N60UFTU-SN00007 | FAIRCHILD | DESIGN/PROCESS CHANGE NOTIFICATION | 获取价格 |
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| FGH40N65UFD | FAIRCHILD | 650V, 40A Field Stop IGBT | 获取价格 |
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| FGH40N65UFDTU | FAIRCHILD | 650V, 40A Field Stop IGBT | 获取价格 |
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| FGH40N65UFDTU | ONSEMI | IGBT，650V，40A，1.8V，TO-247，低 VCE(ON) 场截止 | 获取价格 |
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| FGH40N65UFDTU-F085 | ONSEMI | IGBT，650V，40A，1.8V，TO-247，场截止 | 获取价格 |
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| FGH40N6S2 | FAIRCHILD | 600V, SMPS II Series N-Channel IGBT | 获取价格 |
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