FGH40N60UFTU [ONSEMI]
600V，40A，场截止 IGBT;
| 型号： | FGH40N60UFTU |
| 厂家： | 
ONSEMI |
| 描述： | 600V，40A，场截止 IGBT 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总8页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT - Field Stop
600 V, 40 A
FGH40N60UF
Description
Using novel field stop IGBT technology, onsemi’s field stop IGBTs
offer the optimum performance for solar inverter, UPS, welder and
PFC applications where low conduction and switch−ing losses are
essential.
E
C
G
COLLECTOR
(FLANGE)
Features
• High Current Capability
TO−247−3LD
CASE 340CK
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.8 V @ I = 40 A
C
CE(sat)
MARKING DIAGRAMS
• These Device is Pb−Free and is RoHS Compliant
Applications
$Y&Z&3&K
FGH40N60
UF
• Solar Inverter, UPS, Welder, PFC
ABSOLUTE MAXIMUM RATINGS
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
Value
600
20
Unit
V
V
CES
V
GES
V
Transient Gate to Emitter Voltage
30
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
Collector Current
Collector Current
T
T
T
= 25°C
= 100°C
= 25°C
I
80
A
A
A
C
C
C
C
40
FGH40N60UF
Pulsed Collector Current
(Note 1)
I
120
CM
Maximum Power Dissipation
Maximum Power Dissipation
T
T
= 25°C
P
290
116
W
W
°C
C
D
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
= 100°C
C
Operating Junction Temperature
T
−55 to
+150
J
Storage Temperature Range
T
−55to
°C
°C
stg
+150
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
T
300
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2022 − Rev. 4
FGH40N60UF/D
FGH40N60UF
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
−
Max
0.43
40
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
(IGBT)
JC
ꢀ
R
−
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FGH40N60UFTU
FGH40N60UF
TO−247−3
Tube
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Off Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢁ A
600
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
= 0 V, I = 250 ꢁ A
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢁ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
On Characteristics
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢁ A, V = V
GE
4.0
−
5.0
1.8
2.0
6.5
2.4
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 125°C
−
GE
C
Dynamic Characteristics
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2110
200
60
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Switching Characteristics
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
44
−
−
−
60
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
112
30
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1.19
0.46
1.65
24
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 40 A,
= 10 ꢃ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
45
ns
Inductive Load, T = 125°C
C
Turn−Off Delay Time
Fall Time
120
40
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
1.2
0.69
1.89
120
14
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 400 V, I = 40 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
58
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGH40N60UF
TYPICAL PERFORMANCE CHARACTERISTICS
120
100
80
60
40
20
0
120
15 V
15 V
12 V
T
C
= 25°C
T
C
= 125°C
12 V
20 V
20 V
100
80
60
40
10 V
10 V
20
0
V
GE
= 8 V
V
= 8 V
GE
6.0
0.0
3.0
4.5
4.5
6.0
1.5
0.0
1.5
3.0
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
120
100
80
120
100
Common Emitter
Common Emitter
V
= 15 V
V
= 20 V
GE
GE
T
T
= 25°C
= 125°C
T
T
= 25°C
= 125°C
C
C
C
C
80
60
40
60
40
20
0
20
0
4
0
1
2
3
5
6
7
8
9
10
11
12
V
CE
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
3.5
20
16
12
8
Common Emitter
GE
Common Emitter
V
= 15 V
T
C
= −40°C
3.0
2.5
2.0
1.5
1.0
80 A
40 A
80 A
40 A
I
= 20 A
C
4
I
C
= 20 A
8
0
4
12
16
20
125
25
50
75
100
V
GE
, Gate−Emitter Voltage (V)
T , Case Temperature (°C)
C
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
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3
FGH40N60UF
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
20
16
12
8
20
Common Emitter
C
Common Emitter
= 125°C
T
= 25°C
T
C
16
12
8
80 A
40 A
40 A
80 A
4
0
4
I
= 20 A
8
C
I
C
= 20 A
8
0
4
12
16
20
4
12
16
20
V
GE
, Gate−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
5000
4000
3000
2000
1000
0
15
Common Emitter
Common Emitter
C
V
T
= 0 V, f = 1 MHz
T
= 25°C
GE
C
= 25°C
C
12
9
iss
200 V
V
CC
= 100°C
300 V
C
oss
6
3
C
rss
0
1
30
0.1
10
150
0
50
100
Q , Gate Charge (nC)
g
V
CE
, Collector−Emitter Voltage (V)
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
400
100
200
100
10 ꢁ s
100 ꢁ s
10
1
1 ms
t
r
10 ms
t
d(on)
DS
Single Nonrepetitive
Common Emitter
= 400 V, V = 15 V
Pulse T = 25°C
C
V
CC
GE
0.1
0.01
Curves must be derated
linearly with increase
in temperature.
I
= 40 A
C
T
C
T
C
= 25°C
= 175°C
10
0
10
100
1000
10
20
30
40
50
1
R , Gate Resistance (ꢃ)
G
V
CE
, Collector−Emitter Voltage (V)
Figure 12. Turn−On Characteristics
Figure 11. SOA Characteristics
vs. Gate Resistance
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4
FGH40N60UF
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
5500
1000
500
Common Emitter
Common Emitter
= 400 V, V = 15 V
V
= 15 V, R = 10 ꢃ
V
GE
G
CC
GE
T
T
= 25°C
= 125°C
I
= 40 A
C
C
C
T
C
T
C
= 25°C
t
r
= 125°C
t
d(off)
100
100
10
t
d(on)
t
f
10
20
40
60
80
0
10
20
30
40
50
R , Gate Resistance (ꢃ)
G
I , Collector Current (A)
C
Figure 13. Turn−Off Characteristics
Figure 14. Turn−On Characteristics
vs. Gate Resistance
vs. Collector Current
10
600
100
Common Emitter
Common Emitter
V
T
= 15 V, R = 10 ꢃ
V
I
= 400 V, V = 15 V
GE
G
CC
C
GE
= 25°C
= 40 A
C
C
T
= 125°C
T
C
T
C
= 25°C
= 125°C
t
d(off)
E
on
t
f
E
off
1
10
0.3
60
I , Collector Current (A)
80
20
40
0
10
20
30
40
50
R , Gate Resistance (ꢃ)
G
C
Figure 16. Switching Loss vs. Gate
Resistance
Figure 15. Turn−Off Characteristics
vs. Collector Current
10
200
100
Common Emitter
V
= 15 V, R = 10 ꢃ
GE
G
T
T
= 25°C
= 125°C
C
C
E
on
E
off
1
10
1
Safe Operating Area
V
= 15 V, T = 125°C
GE
C
0.1
80
40
60
20
1
10
100
1000
I , Collector Current (A)
C
V
CE
, Collector−Emitter Voltage (V)
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Turn−Off Switching SOA
Characteristics
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5
FGH40N60UF
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
1
0.5
0.1
0.01
1E−3
0.2
0.1
0.05
0.02
P
DM
0.01
Single Pulse
t
1
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Z + T
ꢀ
j
jc
C
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 19. Transient Thermal Impedance of IGBT
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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