FGH40N65UFDTU [ONSEMI]
IGBT，650V，40A，1.8V，TO-247，低 VCE(ON) 场截止;
| 型号： | FGH40N65UFDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，40A，1.8V，TO-247，低 VCE(ON) 场截止 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
650 V, 40 A
FGH40N65UFDTU,
FGH40N65UFDTU-F085
Description
www.onsemi.com
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for Automotive Chargers,
Inverter, and other applications where low conduction and switching
losses are essential.
V
I
C
CES
650 V
40 A
Features
• High Current Capability
C
E
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.8 V @ I = 40 A
C
CE(sat)
G
• Qualified to Automotive Requirements of AEC−Q101
(FGH40N65UFDTU−F085)
• These Devices are Pb−Free and are RoHS Compliant
E
C
Applications
G
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N65
UFD
$Y&Z&3&K
FGH40N65
UFDTU
Industrial
Automotive
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40N65UFD /
FGH40N65UFDTU = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
FGH40N65UFD−F085/D
January, 2020 − Rev. 3
FGH40N65UFDTU, FGH40N65UFDTU−F085
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
650
CES
GES
V
20
80
V
I
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 25°C
A
40
A
I
(Note 1)
Pulsed Collector Current
120
A
CM
P
D
Maximum Power Dissipation
290
W
W
°C
°C
°C
= 100°C
116
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Typ.
0.43
1.45
40
Unit
R
R
_C/W
_C/W
_C/W
q
JC
(Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGH40N65UFDTU
Top Mark
Package
TO−247
TO−247
Packing Method
Tube
Qty per Tube
FGH40N65UFD
FGH40N65UFDTU
30
30
FGH40N65UFDTU−F085*
Tube
*Qualified to Automotive Requirements of AEC−Q101.
www.onsemi.com
2
FGH40N65UFDTU, FGH40N65UFDTU−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
650
−
−
−
V
V/°C
mA
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.6
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
4.0
5.0
1.8
6.5
2.4
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 40 A, V = 15 V,
−
CE(sat)
GE
= 40 A, V = 15 V,
GE
−
2.0
−
V
T
= 125°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
1860
200
65
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
23
35
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
126
26
−
ns
d(off)
T
f
60
−
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.28
0.50
1.78
mJ
mJ
mJ
on
off
E
−
E
−
ts
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
21
39
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 125°C
C
T
Turn−Off Delay Time
Fall Time
131
72
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.62
0.79
2.41
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 40 A,
Q
Total Gate Charge
−
−
−
119
14
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
64
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH40N65UFDTU, FGH40N65UFDTU−F085
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
= 25°C
Min
−
Typ
1.80
1.71
65
Max
2.6
−
Unit
I = 20 A
T
C
V
V
FM
Diode Forward Voltage
F
T
= 125°C
T = 25°C
C
−
C
I = 20 A,
ns
T
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
−
−
F
di /dt = 200 A/ms
F
T
= 125°C
= 25°C
−
215
145
775
−
C
T
nC
Q
−
−
C
rr
T
C
= 125°C
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
FGH40N65UFDTU, FGH40N65UFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS
120
100
80
60
40
20
0
120
TC = 25oC
TC = 125oC
20V
15V
15V
12V
20V
12V
100
80
10V
60
40
20
0
10V
VGE = 8V
VGE = 8V
0.0
1.5
3.0
4.5
6.0
0.0
1.5
3.0
4.5
6.0
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
100
100
80
60
40
20
0
80
60
40
20
0
0
2
4
6
8
10
12
0
1
2
3
4
Collector−Emitter Voltage, V (V)
CE
Gate−Emitter Voltage,V (V)
GE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
3.5
20
16
12
8
Common Emitter
VGE = 15V
Common Emitter
TC = −40oC
3.0
2.5
2.0
1.5
1.0
0.5
80A
40A
IC = 20A
80A
4
40A
IC = 20A
0
4
8
12
16
GE
20
25
50
75
100
125
Gate−Emitter Voltage, V (V)
Collector−Emitter Case Temperature, T (5C)
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
www.onsemi.com
5
FGH40N65UFDTU, FGH40N65UFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
80A
40A
80A
12
4
0
4
40A
IC = 20A
IC = 20A
0
4
8
16
20
4
8
12
16
20
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
GE
Figure 7. Saturation Voltage vs VGE
Figure 8. Saturation Voltage vs VGE
5000
4000
3000
2000
1000
0
15
12
9
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
200V
VCC = 100V
300V
Coes
6
Cres
3
0
0.1
1
10
30
0
50
100
150
Collector−Emitter Voltage, V (V)
Gate Charge, Qg(nC)
CE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
400
100
200
10ms
100
ms
100
10
1
1ms
10 ms
tr
DC
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
*Notes: Single Nonrepetitive
Pulse TC= 25OC
td(on)
0.1
0.01
Curves must be derated linearly
with increase in temperature
10
1
10
100
1000
0
10
20
30
40
50
Collector−Emitter Voltage, V (V)
CE
Gate Resistance, R (W)
G
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics
vs. Gate Resistance
www.onsemi.com
6
FGH40N65UFDTU, FGH40N65UFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
5500
1000
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V, RG = 10 W
TC = 25oC
TC = 125oC
tr
td(off)
100
100
10
tf
td(on)
10
0
10
20
30
40
50
20
40
60
80
Gate Resistance, R (W)
G
Collector Current, I (A)
C
Figure 14. Turn−on Characteristics
Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance
10
600
100
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
Common Emitter
VCC = 400V, VGE = 15V
W
IC = 40A
TC = 25oC
TC = 125oC
td(off)
Eon
tf
1
Eoff
0.3
10
20
40
60
80
0
10
20
30
40
50
Collector Current, I (A)
C
Gate Resistance, R (W)
G
Figure 15. Turn−off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
200
100
20
10
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
W
Eon
1
10
Eoff
Safe Operating Area
VGE = 15V, TC = 125oC
0.1
20
1
30
40
50
60
70
80
1
10
100
1000
Collector Current, I (A)
C
Collector−Emitter Voltage, V (V)
CE
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn Off Switching SOA Characteristics
www.onsemi.com
7
FGH40N65UFDTU, FGH40N65UFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
200
100
80
TJ = 125oC
TJ = 125oC
10
10
TJ = 75oC
TJ = 25oC
1
0.1
TJ = 75oC
1
TJ = 25oC
TC = 25oC
TC = 125oC
T
C = 75oC
0.1
0
0.01
150
300
450
600
1
2
3
4
50
Forward Voltage, V (V)
Reverse Voltage, V (V)
F
R
Figure 19. Forward Characteristics
Figure 20. Reverse Current
200
150
100
50
90
60
30
200A/
ms
ms
200A/
di/dt = 100A/
ms
di/dt = 100A/
ms
0
10
20
30
40
5
10
20
30
40
5
Forward Current, I (A)
Forward Current, I (A)
F
F
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
1
0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
PDM
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
10−5
10−4
10−3
10−2
10−1
11
0
Rectangular Pulse Duration (sec)
Figure 23. Transient Thermal Impedance of IGBT
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FGH40N6S2D_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, LEAD FREE PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明