FGH40T100SMD-F155 [ONSEMI]
IGBT，1000 V，40A，场截止沟槽;
| 型号： | FGH40T100SMD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1000 V，40A，场截止沟槽 双极性晶体管 |
| 文件： | 总11页 (文件大小：573K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年 2 月
FGH40T100SMD
1000 V、 40 A 场截止沟道 IGBT
特性
概述
•
•
•
•
•
高电流能力
飞兆半导体新型系列场截止沟道 IGBT 采用创新的场截止沟道
IGBT 技术，可针对诸如 UPS、焊 机 和 PFC 等硬开关应用提供最
佳性能。
低饱和电压：VCE(sat) = 1.9 V （典型值） @ IC = 40 A
高输入阻抗
快速开关
符合 RoHS 标准
应用
•
UPS、焊接机、 PFC
C
E
C
G
G
集电极
(FLANGE)
E
绝对最大额定值
符号
说明
额定值
1000
±25
±30
80
单位
V
VCES
集电极 - 发射极之间电压
栅极 - 发射极间电压
瞬态栅极 - 发射极间电压
集电极电流
V
VGES
V
@ TC = 25°C
@ TC = 100°C
A
IC
40
A
集电极电流
ICM (1)
IF
IFM (1)
PD
120
80
A
脉冲集电极电流
二极管正向电流
二极管正向电流
脉冲二极管正向电流
最大功耗
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
A
40
A
120
333
166
A
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
W
W
°C
°C
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
°C
注意：
1: 重复额定值：脉宽受最大结温限制
热性能
符号
参数
典型值
最大值
0.45
0.8
单位
°C/W
°C/W
°C/W
RJC(IGBT)
RJC（二极管）
RJA
-
-
-
结点 - 壳体的热阻
结点 - 壳体的热阻
结至环境热阻
40
©2012 飞兆半导体公司
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FGH40T100SMD 修订版 C4
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGH40T100SMD
FGH40T100SMD
TO-247
-
-
30ea
IGBT 的电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V， IC = 1 mA
GE = 0 V， IC = 250 μA
1000
-
-
-
-
V
集电极 - 发射极击穿电压
BVCES
TJ
击穿温度系数电压
V
0.6
V/°C
ICES
IGES
VCE = VCES， VGE = 0 V
VGE = VGES， VCE = 0 V
-
-
-
-
1000
±500
A
集电极切断电流
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250 μA，VCE = VGE
4.2
-
5.3
1.9
6.5
2.3
V
V
G-E 阈值电压
I
C = 40 A，VGE = 15 V
IC = 40 A， VGE = 15 V，
C = 175°C
VCE(sat)
集电极 - 发射极间饱和电压
-
2.4
-
V
T
动态特性
Cies
-
-
-
3980
124
76
5295
165
115
pF
pF
pF
输入电容
VCE = 30 V， VGE = 0 V，
f = 1 MHz
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
29
42
38
55
ns
ns
导通延迟时间
上升时间
td(off)
tf
285
23
371
30
ns
关断延迟时间
下降时间
VCC = 600 V， IC = 40 A，
R
G = 10 ， VGE = 15 V，
ns
感性负载， TC = 25°C
Eon
Eoff
Ets
2.35
1.15
3.5
27
3.1
1.5
4.6
36
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
49
64
ns
285
20
371
26
ns
关断延迟时间
下降时间
VCC = 600 V， IC = 40 A，
R
G = 10 ， VGE = 15 V，
ns
感性负载， TC = 175°C
Eon
Eoff
Ets
4.4
1.9
6.3
265
32
5.7
2.5
8.2
398
48
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
VCE = 600 V， IC = 40 A，
Qge
Qgc
栅极－发射极间电荷
栅极－发射极间电荷
V
GE = 15 V
135
203
©2012 飞兆半导体公司
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FGH40T100SMD 修订版 C4
二极管电气特性
T = 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
T
C = 25°C
-
-
-
-
-
-
3.4
2.6
4.4
VFM
IF=40 A
V
二极管正向电压
TC = 175°C
-
78
-
T
T
C = 25°C
60
trr
ns
nC
二极管反向恢复时间
二极管反向恢复电荷
C = 175°C
256
185
1512
IF=40 A， dIF/dt=200 A/s
TC = 25°C
260
-
Qrr
TC = 175°C
©2012 飞兆半导体公司
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FGH40T100SMD 修订版 C4
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
120
20V
120
TC = 25oC
TC = 175oC
15V
12V
20V
12V
100
80
60
40
20
0
15V
90
60
30
10V
10V
VGE = 8V
VGE = 8V
0
0
0
2
4
6
8
10
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 典型饱和电压与壳温的关系
（可变电流强度下）
4
120
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
90
80A
3
2
1
60
40A
30
0
IC = 20A
25
50
75
100
125
150
175
0
1
2
3
4
5
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
8
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
80A
40A
40A
80A
4
0
4
IC = 20A
IC = 20A
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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FGH40T100SMD 修订版 C4
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
10000
Cies
12
9
400V
VCC = 600V
200V
1000
100
Coes
6
Cres
Common Emitter
3
VGE = 0V, f = 1MHz
TC = 25oC
Common Emitter
TC = 25oC
10
0.1
0
1
10
0
50
100
150
200
250
300
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
200
2000
1000
100
td(off)
100
tr
tf
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VCC = 600V, VGE = 15V
td(on)
10
1
IC = 40A
IC = 40A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
10
1000
Eon
Common Emitter
VGE = 15V, RG =10
TC = 25oC
TC = 175oC
tr
Eoff
1
100
Common Emitter
VCC = 600V, VGE = 15V
td(on)
IC = 40A
TC = 25oC
TC = 175oC
0.1
10
20
0
10
20
30
40
50
30
40
50
60
70
80
Gate Resistance, RG []
Collector Current, IC [A]
©2012 飞兆半导体公司
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FGH40T100SMD 修订版 C4
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
15
1000
10
Eon
td(off)
100
1
Eoff
tf
Common Emitter
10
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
TC = 175oC
0.1
1
20
20
30
40
50
60
70
80
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
100
100
VCC = 600V
10s
load Current : peak of square wave
100s
1ms
10 ms
DC
10
1
50
*Notes:
0.1
1. TC = 25oC
2. TJ = 175oC
Duty cycle : 50%
TC = 125oC
3. Single Pulse
Powe Dissipation = 111 W
0.01
0
1k
1
10
100
1000
2000
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
图 17. 正向特性
图 18. 反向恢复电流
80
21
TC = 25oC
TC = 175oC
18
Tc = 175oC
diF/dt = 200A/s
diF/dt = 100A/s
15
12
9
Tc = 75oC
10
Tc = 25oC
diF/dt = 200A/s
diF/dt = 100A/s
6
Tc = 25oC
Tc = 75oC ---
Tc = 175oC
3
1
0
0
1
2
3
4
5
0
20
40
60
80
Forward Voltage, VF [V]
Forward Current, IF [A]
©2012 飞兆半导体公司
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FGH40T100SMD 修订版 C4
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
360
2500
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC ---
300
240
180
2000
1500
1000
diF/dt = 100A/s
diF/dt = 200A/s
diF/dt = 200A/s
diF/dt = 100A/s
120
60
0
500
0
0
20
40
60
80
0
20
40
60
80
Forward Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 瞬态热阻抗
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
PDM
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
0.001
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
©2012 飞兆半导体公司
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FGH40T100SMD 修订版 C4
机械尺寸
图 23. TO-247，模塑， 3 引脚， JEDEC 变量 AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
尺寸单位为毫米
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修订版 I66
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