FGH60N60SFDTU-F085 [ONSEMI]
IGBT，600V，60A，2.2V，TO-247，高速场截止;
| 型号： | FGH60N60SFDTU-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，60A，2.2V，TO-247，高速场截止 双极性晶体管 |
| 文件： | 总9页 (文件大小：472K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 60 A
FGH60N60SFDTU-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where low
conduction and switching losses are essential.
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C
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 2.2 V @ I = 60 A
C
CE(sat)
G
E
E
• Qualified to Automotive Requirements of AEC−Q101
• This Device is Pb−Free and is RoHS Compliant
C
G
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SFDTU
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH60N60SFDTU = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
FGH60N60SFDTU−F085/D
February, 2020 − Rev. 3
FGH60N60SFDTU−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Description
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
600
20
30
V
Transient Gate−to−Emitter Voltage
V
Collector Current
T
T
T
T
T
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
I
120
A
C
C
C
C
C
C
60
A
Pulsed Collector Current
I
(Note 1)
180
A
CM
Maximum Power Dissipation
P
378
W
W
°C
°C
°C
D
151
Operating Junction Temperature
Storage Temperature Range
T
−55 to +150
−55 to +150
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive test, Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case
Symbol
(IGBT)
Typ
0.33
1.1
Unit
°C/W
°C/W
°C/W
R
R
ꢀ
JC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Diode)
ꢀ
JC
R
40
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Tube
Reel Size
Tape Width
Quantity
FGH60N60SFDTU−F085
FGH60N60SFDTU
TO−247
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢁ A
600
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
= 0 V, I = 250 ꢁ A
−
0.4
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢁ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢁ A, V = V
GE
4.0
−
5.1
2.2
2.4
6.6
2.9
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 60 A, V = 15 V
GE
CE(sat)
= 60 A, V = 15 V, T = 125°C
−
GE
C
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2
FGH60N60SFDTU−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2940
310
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
100
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 60 A,
−
−
−
−
−
−
26
54
−
−
−
62
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 5 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
134
18
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1.97
0.57
2.54
26
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 60 A,
−
−
−
−
−
−
−
−
−
−
d(on)
CC
C
R
= 5 ꢃ ꢄ V = 15 V,
G
GE
t
r
50
ns
Inductive Load, T = 125°C
C
Turn−Off Delay Time
Fall Time
142
24
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
2.5
0.8
3.2
188
21
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 400 V, I = 60 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
98
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
−
Typ
1.9
1.7
55
Max
2.6
−
Unit
V
FM
Diode Forward Voltage
I = 30 A
T
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
V
F
C
C
C
C
C
C
T
T
T
T
T
−
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I = 30 A, di /dt = 200 A/ꢁ s
−
−
ns
F
F
−
204
125
895
−
Q
−
−
nC
rr
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH60N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS
180
150
180
T
C
= 25°C
T
C
= 125°C
15 V
15 V
20 V
20 V
150
120
90
12 V
12 V
10 V
120
90
60
30
0
10 V
60
30
0
V
GE
= 8 V
V
= 8 V
GE
0
2
4
6
8
2
4
6
8
0
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
180
180
150
120
90
Common Emitter
Common Emitter
V
= 20 V
CE
V
= 15 V
GE
150
120
90
60
30
0
T
T
= 25°C
C
C
T
T
= 25°C
C
C
= 125°C
= 125°C
60
30
0
3
6
9
12
15
4
5
2
3
0
0
1
Collector−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
CE
GE
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
16
12
8
Common Emitter
GE
Common Emitter
C
V
= 15 V
T
= −40°C
120 A
60 A
120 A
12
I
= 30 A
C
4
0
60 A
= 30 A
I
C
125
25
50
75
100
8
16
20
0
4
Collector−Emitter Case Temperature, T [°C]
Gate−Emitter Voltage, V [V]
C
GE
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
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4
FGH60N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
16
12
8
20
Common Emitter
C
Common Emitter
= 125°C
T
= 25°C
T
C
16
12
8
120 A
120A
12
4
0
4
0
60A
= 30 A
60 A
= 30 A
I
I
C
C
16
20
4
8
20
0
16
Gate−Emitter Voltage, V [V]
0
4
8
12
Gate−Emitter Voltage, V [V]
GE
GE
Figure 8. Saturation Voltage vs. VGE
Figure 7. Saturation Voltage vs. VGE
15
12
9
6000
5000
4000
3000
2000
Common Emitter
C
Common Emitter
T
= 25°C
V
= 0 V, f = 1 MHz
GE
T
= 25°C
C
C
300 V
ies
V
CC
= 100 V
200 V
6
C
oes
3
1000
0
C
res
0
50
100
150
200
0
30
1
10
Collector−Emitter Voltage, V [V]
Gate Charge, Q [nC]
g
CE
Figure 10. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
500
100
300
10 ꢁ s
100 ꢁ s
1 ms
100
10
1
10
1
10 ms
DC
Single Nonrepetitive
Pulse T = 25°C
C
0.1
0.01
Curves must be derated
linearly with increase
in temperature.
Safe Operating Area
V
GE
= 15 V, T = 125°C
C
1
10
100
1000
100
1000
10
1
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 11. SOA Characteristics
Figure 12. Turn−Off Switching SOA Characteristics
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5
FGH60N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
6000
Common Emitter
V
= 400 V, V = 15 V
CC
GE
I
T
T
= 60 A
C
= 25°C
C
C
1000
100
10
= 125°C
t
r
t
d(off)
Common Emitter
= 400 V, V = 15 V
t
d(on)
V
CC
GE
t
f
I
= 60 A
C
T
C
T
C
= 25°C
= 125°C
10
50
10
20
30
40
0
10
20
30
40
50
0
Gate Resistance, R [ꢃ]
G
Gate Resistance, R [ꢃ]
G
Figure 14. Turn−Off Characteristics
Figure 13. Turn−On Characteristics
vs. Gate Resistance
vs. Gate Resistance
200
100
1000
100
10
Common Emitter
Common Emitter
V
T
C
= 15 V, R = 5 ꢃ
V
T
C
= 15 V, R = 5 ꢃ
GE
G
GE
G
= 25°C
= 25°C
C
C
T
= 125°C
T
= 125°C
t
d(off)
t
r
t
d(on)
t
f
10
2
20
40
60
80
100 120
0
20
40
60
80
120
100
Collector Current, I [A]
Collector Current, I [A]
C
C
Figure 16. Turn−Off Characteristics
Figure 15. Turn−On Characteristics
vs. Collector Current
vs. Collector Current
20
10
Common Emitter
Common Emitter
E
V
I
= 400 V, V = ꢅ ꢆ V
V
T
= 15 V, R = 5 ꢃ
G
on
CC
GE
GE
= 60 A
= 25°C
10
C
C
T
T
C
T
C
= 25°C
= 125°C
C
= 125°C
E
on
1
E
off
E
off
1
0.1
0.5
0
10
20
30
40
50
0
20
40
60
80
100 120
Gate Resistance, R [ꢃ]
Collector Current, I [A]
G
C
Figure 18. Switching Loss vs. Collector Current
Figure 17. Switching Loss vs. Gate Resistance
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6
FGH60N60SFDTU−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
100
200
100
T
= 125°C
= 75°C
T = 125°C
J
C
T = 25°C
J
10
1
10
T = 75°C
J
T
C
1
T
C
= 25°C
0.1
0.01
0.1
50
200
400
600
1
2
3
4
0
Reverse Voltage, V [V]
Forward Voltage, V [V]
R
F
Figure 20. Reverse Current
Figure 19. Forward Characteristics
200
150
80
70
60
200 A/ꢁ s
200 A/ꢁ s
100
50
0
di/dt = 100 A/ꢁ s
di/dt = 100 A/ꢁ s
50
40
T
C
= 25°C
T
C
= 25°C
60
0
10
20
30
40
50
60
0
10
20
30
40
F
50
Forward Current, I [A]
Forward Current, I [A]
F
Figure 22. Reverse Recovery Time
Figure 21. Stored Charge
1
0.5
0.1
0.01
1E−3
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
Single Pulse
t
2
Duty Factor, D = t1/t2
Peak T = Pdm x Zꢀ jc + T
j
C
1
1E−5
1E−4
1E−3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 23. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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