FGH60N60SMD [ONSEMI]
IGBT，600V，60A，场截止;
| 型号： | FGH60N60SMD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，60A，场截止 局域网 PC 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 60 A
FGH60N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
nd
series of field stop 2 generation IGBTs offer the optimum
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performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
V
I
C
CES
Features
600 V
60 A
• Maximum Junction Temperature: T = 175°C
J
C
E
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
= 1.9 V (Typ.) @ I = 60 A
C
CE(sat)
G
• Fast Switching: E
= 7.5 uJ/A
OFF
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
E
C
Applications
G
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SMD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH60N60SMD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2020 − Rev. 3
FGH60N60SMD/D
FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
600
V
20
V
Transient Gate to Emitter Voltage
Collector Current
30
120
V
I
C
T
T
= 25°C
A
C
= 100°C
60
A
C
I
(Note 1)
Pulsed Collector Current
Diode Forward Current
180
A
CM
I
F
T
T
= 25°C
60
A
C
= 100°C
30
A
C
I
(Note 1)
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
180
A
FM
P
D
T
T
= 25°C
600
W
W
°C
°C
°C
C
= 100°C
300
C
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
−
Max.
0.25
1.1
Unit
R
R
_C/W
_C/W
_C/W
q
JC
(Diode)
−
q
JC
R
−
40
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Qty per
Tube
Part Number
Top Mark
Package
Reel Size
Tape Width
FGH60N60SMD
FGH60N60SMD
TO−247
Tube
N/A
N/A
30
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2
FGH60N60SMD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
V/°C
mA
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.6
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
3.5
4.5
1.9
6.0
2.5
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 60 A, V = 15 V,
−
CE(sat)
GE
= 60 A, V = 15 V,
GE
−
2.1
−
V
T
= 175°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
2915
270
85
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 60 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
18
47
27
70
ns
ns
d(on)
R
= 3 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
104
50
146
68
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.26
0.45
1.71
1.94
0.6
2.54
mJ
mJ
mJ
on
off
E
E
ts
V
= 400 V, I = 60 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
18
41
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 3 W, V = 15 V,
GE
T
r
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
115
48
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
2.1
0.78
2.88
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 60 A,
Q
Total Gate Charge
−
−
−
189
20
284
30
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
91
137
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH60N60SMD
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
2.1
1.7
79
Max
2.7
−
Unit
I = 30 A
T
C
= 25°C
V
V
FM
Diode Forward Voltage
F
T
T
= 175°C
= 175°C
= 25°C
−
C
C
I = 30 A,
uJ
ns
E
rec
Reverse Recovery Energy
F
−
−
di /dt = 200 A/ms
F
T
T
rr
Diode Reverse Recovery Time
−
30
39
−
C
T
= 175°C
= 25°C
−
72
C
T
nC
Q
Diode Reverse Recovery Charge
−
44
62
−
C
rr
T
C
= 175°C
−
238
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGH60N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS
180
180
150
120
90
20V
15V
12V
TC = 175oC
20V
15V
TC = 25oC
12V
10V
150
10V
120
90
VGE = 8V
60
60
VGE = 8V
30
0
30
0
0
2
4
6
0
2
4
6
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
150
150
120
90
60
30
0
TC = 175o
C
120
90
60
30
0
2
4
6
8
10
12
0
1
2
3
4
5
Collector−Emitter Voltage, V (V)
CE
Gate−Emitter Voltage,V (V)
GE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
20
16
12
8
Common Emitter
TC = −40oC
Common Emitter
VGE = 15V
120A
60A
60A
IC = 30A
120A
4
IC = 30A
0
25
50
75
100
125
150
175
4
8
12
16
GE
20
Gate−Emitter Voltage, V (V)
Case Temperature, T (5C)
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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5
FGH60N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
12
8
60A
60A
120A
120A
4
4
IC = 30A
IC = 30A
0
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
GE
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
7000
6000
5000
4000
3000
2000
1000
0
15
12
9
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
VCC = 200V
300V
400V
Cies
6
Coes
Cres
3
0
0.1
1
10
0
40
80
120
160
200
30
Collector−Emitter Voltage, V (V)
Gate Charge, Qg(nC)
CE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
300
100
100
ms
10
80
tr
ms
100
1ms
10 ms
DC
60
10
1
40
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
20
10
*Notes:
0.1
0.01
1.T = 25 5C
C
2.T = 175 5C
J
3. Single Pulse
1
10
100
1000
0
10
20
30
40
50
Collector−Emitter Voltage, V (V)
Gate Resistance, R (W)
CE
G
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics
vs. Gate Resistance
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6
FGH60N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
6000
1000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
Common Emitter
VGE = 15V, RG = 3 W
TC = 25oC
TC = 175oC
tr
100
td(off)
td(on)
100
10
10
tf
1
0
30
60
90
120
0
10
20
30
40
50
Gate Resistance, R (W)
G
Collector Current, I (A)
C
Figure 14. Turn−on Characteristics
Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance
1000
100
10
5
1
Eon
td(off)
tf
Eoff
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 3
IC = 60A
W
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
1
0.1
0
10
20
30
40
50
0
30
60
90
120
Collector Current, I (A)
C
Gate Resistance, R (W)
G
Figure 15. Turn−off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
10
1
300
100
10
1
Eon
Eoff
Common Emitter
VGE = 15V, RG = 3 W
TC = 25oC
TC = 175oC
0.1
0.01
Safe Operating Area
VGE = 15V, TC = 175oC
0
30
60
90
120
1
10
100
1000
Collector Current, I (A)
C
Collector−Emitter Voltage, V (V)
CE
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn Off Switching SOA Characteristics
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7
FGH60N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
130
120
110
100
90
180
Square Wave
Common Emitter
VGE = 15V
TJ < 175oC,D = 0.5,VCE = 400V
160
140
120
100
80
VGE = 15/0V, RG = 3 W
80
Tc = 75oC
70
60
o
50
Tc = 100 C
60
40
30
40
20
20
10
0
1k
10k
100k
1M
25
50
75
100
125 o 150
175
Case Temperature, T (5C)
Switching Frequency, f (Hz)
C
Figure 19. Current Derating
Figure 20. Load Current vs. Frequency
200
10000
1000
TC = 175oC
100
10
1
TC = 175oC
TC = 125oC
TC = 75oC
100
10
TC = 125oC
TC = 75oC
TC = 25oC
1
TC = 25oC
TC = 75oC −−−−
TC = 125 oC −−−−
TC = 25oC
0.1
0.01
TC = 175 oC
0
1
2
3
4
0
100
200
300
400
500
600
Forward Voltage, V (V)
Reverse Voltage, V (V)
F
R
Figure 21. Forward Characteristics
Figure 22. Reverse Current
350
100
90
80
70
60
50
40
30
20
TC = 25oC
TC = 25oC
TC = 175oC −−−−
300 TC = 175oC −−−−
250
200
150
100
diF/dt = 100A/ms
ms
diF/dt = 200A/
ms
diF/dt = 100A/
ms
diF/dt = 200A/
50
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Forward Current, I (A)
Forward Current, I (A)
F
F
Figure 23. Stored Charge
Figure 24. Reverse Recovery Time
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8
FGH60N60SMD
0.5
0.1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + T
j
C
1E−3
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 25. Transient Thermal Impedance of IGBT
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
1E−3
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 26. Transient Thermal Impedance of Diode
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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