FGH60N60SMD-F085 [ONSEMI]
IGBT，600V，60A，1.8V，TO-247 场截止;
| 型号： | FGH60N60SMD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，60A，1.8V，TO-247 场截止 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 60 A
FGH60N60SMD-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop Trench IGBTs offer the optimum
performance for Automotive chargers, Solar Inverter, UPS and Digital
Power Generator where low conduction and switching losses are
essential.
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V
I
C
CES
600 V
60 A
Features
• Maximum Junction Temperature: T = 175°C
C
E
J
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
= 1.8 V (Typ.) @ I = 60 A
C
CE(sat)
G
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
E
• Qualified to Automotive Requirements of AEC−Q101
C
G
Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Solar Inverters, UPS, SMPS, PFC
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SMD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH60N60SMD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
FGH60N60SMD−F085/D
January, 2020 − Rev. 4
FGH60N60SMD−F085
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
V
20
120
V
I
C
T
T
= 25°C
A
C
= 100°C
60
A
C
I
(Note 1)
Pulsed Collector Current
Diode Forward Current
180
A
CM
I
F
T
T
= 25°C
60
A
C
= 100°C
30
A
C
I
(Note 1)
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
180
A
FM
P
D
T
T
= 25°C
600
W
W
°C
°C
°C
C
= 100°C
300
C
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Max.
Unit
R
R
(IGBT)
0.25
_C/W
q
JC
(Note 2)
(Diode)
Thermal Resistance, Junction to Case
1.1
45
_C/W
_C/W
q
JC
R
Thermal Resistance, Junction to Ambient (PCB Mount) (Note 2)
q
JA
2. Rthjc for TO−247 : according to Mil standard 883−1012 test method. Rthja for TO−247 : according to JESD51−2, test method environmental
condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective
Thermal Conductivity Test Board for Leaded Surface Mount Package.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Packing Method
Qty per Tube
FGH60N60SMD
FGH60N60SMD−F085
TO−247
Tube
30ea
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2
FGH60N60SMD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.22
V/°C
mA
CES
J
GE
C
I
Collector Cut−Off Current
V
CE
= V
, V = 0 V
GE
−
−
250
CES
CES
I
at 80 % *BVCES, 175 °C
−
−
−
−
1100
400
CES
I
G−E Leakage Current
V
= V
, V = 0 V
CE
nA
GES
GE
GES
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
3.5
4.7
1.8
6.0
2.5
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 60 A, V = 15 V,
−
CE(sat)
GE
= 60 A, V = 15 V,
GE
−
2.14
−
V
T
= 175°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
2780
260
80
3700
345
110
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 60 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
22
46
29
60
ns
ns
d(on)
R
= 3 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
116
14
151
18
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.59
0.39
1.98
2.23
0.55
2.78
mJ
mJ
mJ
on
off
E
E
ts
V
= 400 V, I = 60 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
22
44
28
58
ns
ns
d(on)
R
= 3 W, V = 15 V,
GE
T
r
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
124
15
161
20
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
2.41
1.08
3.49
3.13
1.42
4.55
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 60 A,
Q
Total Gate Charge
−
−
−
187
20
280
29
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
92
138
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH60N60SMD−F085
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
2.1
1.48
33
Max
2.7
−
Unit
I = 30 A
T
C
= 25°C
V
V
FM
Diode Forward Voltage
F
T
= 175°C
= 25°C
−
C
C
C
I = 30 A,
T
ns
T
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
−
42
−
F
C
dI /dt = 200 A/ms
F
T
= 175°C
= 25°C
−
115
53
T
nC
Q
−
69
−
C
rr
T
= 175°C
−
606
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGH60N60SMD−F085
TYPICAL PERFORMANCE CHARACTERISTICS
180
180
120
60
V
=20V
V
=20V
GE
GE
15V
12V
12V
15V
10V
120
60
0
10V
8V
8V
o
o
T
= 175 C
T
= 25 C
C
C
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
120
Common Emitter
V
= 20V
CE
o
T
C
= 25 C
o
90
60
30
0
T
= 175 C
C
120
60
Common Emitter
V
T
T
= 15V
o
GE
= 25 C
C
C
o
= 175 C
0
0
1
2
3
4
5
0
4
8
12
Gate−Emitter Voltage,V (V)
Collector−Emitter Voltage, V (V)
GE
CE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
20
16
12
8
4
3
2
1
Common Emitter
Common Emitter
o
V
= 15V
GE
T
= −40 C
C
120A
120A
60A
60A
I
= 30A
C
4
I
C
= 30A
0
25
50
75
100
125
150
175
4
8
12
16
20
Gate−Emitter Voltage, V (V)
Collector−Emitter Case Temperature, T (5C)
GE
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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5
FGH60N60SMD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
16
12
8
20
Common Emitter
o
Common Emitter
o
T
= 25 C
T
= 175 C
C
C
16
12
8
120A
120A
60A
60A
I
C
= 30A
I
= 30A
C
4
4
0
0
4
8
12
16
GE
20
4
8
12
16
20
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
10000
1000
15
12
9
C
ies
V
= 100V
CC
300V
200V
C
6
oes
Common Emitter
3
C
res
V
= 0V, f = 1MHz
o
Common Emitter
o
GE
100
50
T
= 25 C
T
= 25 C
C
C
0
11
0
0
50
100
150
200
30
Collector−Emitter Voltage, V (V)
CE
Gate Charge, Qg(nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
300
1000
Common Emitter
= 400V, V = 15V
V
CC
10ms
GE
100
10
1
I
C
= 60A
o
T
= 25 C
C
100ms
o
T
= 175 C
C
10 ms
t
1ms
r
100
DC
*Notes:
t
o
d(on)
1. T = 25 C
C
o
2. T v175 C
J
3. Single Pulse
0.1
10
1
10
100
1000
0
10
20
30
40
50
Collector−Emitter Voltage, V (V)
CE
Gate Resistance, R (W)
G
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics
vs. Gate Resistance
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6
FGH60N60SMD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10000
1000
100
500
Common Emitter
= 400V, V = 15V
V
CC
GE
I
= 60A
C
o
100
T
C
= 25 C
t
t
r
o
d(off)
T
C
= 175 C
t
d(on)
t
10
1
f
Common Emitter
V
= 15V, R = 3W
GE
G
o
T
= 25 C
C
o
T
= 175 C
C
10
0
10
20
30
40
50
0
30
60
90
120
150
Collector Current, I (A)
Gate Resistance, R (W)
C
G
Figure 14. Turn−on Characteristics
Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance
1000
100
10
10
t
d(off)
E
on
t
f
1
E
off
Common Emitter
V
= 400V, V = 15V
Common Emitter
CC
GE
I
= 60A
W
V
= 15V, R = 3
GE
G
C
o
o
T
= 25 C
T
= 25 C
C
C
o
o
T
= 175 C
T
= 175 C
C
C
0.1
1
0
30
60
90
120
150
0
10
20
30
40
50
Gate Resistance, R (W)
Collector Current, I (A)
G
C
Figure 15. Turn−off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
300
100
50
10
Common Emitter
W
V
= 15V, R = 3
GE
G
o
T
= 25 C
C
o
T
= 175 C
C
E
on
10
1
1
E
off
Safe Operating Area
o
V
= 15V, T v175 C
GE
C
0.1
1
10
100
1000
0
30
60
90
120
150
Collector−Emitter Voltage, V (V)
Collector Current, I (A)
CE
C
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn Off Switching SOA Characteristics
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7
FGH60N60SMD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
15
200
100
o
T
= 25 C
C
o
T
= 175 C
C
12
9
ms
di/dt = 200A/
o
T
C
= 175 C
ms
100A/
10
o
6
T
= 125 C
C
di/dt = 200A/
ms
o
T
= 75 C
o
C
3
T
C
= 25 C
ms
100A/
60
0
1
0
60
60
0
1
2
3
4
Forward Current, I (A)
Forward Voltage, V (V)
F
F
Figure 19. Forward Characteristics
Figure 20. Reverse Recovery Current
800
600
400
200
0
200
150
100
o
o
T
T
= 25 C
T
= 25 C
C
C
C
o
o
200A/
ms
= 175 C
di/dt = 100A/ ms
200A/ms
T
= 175 C
C
di/dt = 100A/
ms
ms
ms
di/dt = 100A/
200A/
50
0
ms
200A/
20
ms
di/dt = 100A/
40
0
60
0
20
40
60
Forward Current, I (A)
Forward Current, I (A)
F
F
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
0.5
0.5
0.1
0.2
0.1
0.05
0.02
PDM
0.01
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + T
j
C
1E−3
1E−5
1E−4
1E−3
0.01
0.1
Rectangular Pulse Duration (sec)
Figure 23. Transient Thermal Impedance of IGBT
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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