FGH60T65SHD-F155 [ONSEMI]
IGBT，650V，60A，场截止沟槽;
| 型号： | FGH60T65SHD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，60A，场截止沟槽 双极性晶体管 |
| 文件： | 总10页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年 3 月
FGH60T65SHD
650 V， 60 A 场截止沟槽 IGBT
特性
概述
•
•
•
•
•
•
•
•
•
最大结温：TJ =175°C
正温度系数，易于并联运行
高电流能力
Fairchild 场截止第三代 IGBT 新系列采用创新型场截止 IGBT 技
术，为光伏逆变器、 UPS、焊机、通讯、 ESS 和 PFC 等低导通
和开关损耗至关重要的应用提供最佳性能。
低饱和电压：VCE(sat) =1.6 V( 典型值 )@ IC = 60 A
器件 100% 经过 ILM(1) 测试
高输入阻抗
应用
•
太阳能逆变器、 UPS、电焊机、电信、 ESS 、 PFC
快速开关
紧密的参数分布
符合 RoHS 标准
C
G
G
TO-247
长引脚
C
E
E
绝对最大额定值 TC = 25°C 除非另有说明
符号 描述
FGH60T65SHD_F155
单位
VCES
650
± 20
± 30
120
60
V
V
V
A
A
A
集电极－发射极之间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
VGES
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
IC
集电极电流
ILM (1)
ICM (2)
180
180
60
集电极脉冲电流
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
@ TC = 25°C
@ TC = 100°C
A
A
IF
30
IFM
PD
180
349
174
A
@ TC = 25°C
@ TC = 100°C
W
W
°C
°C
°C
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
注：
1. V = 400 V, V = 15 V, I =180 A, R = 20 Ω, 感性负载
CC
GE
C
G
2. 重复额定值：脉宽受最大结温限制
©2014 飞兆半导体公司
1
www.fairchildsemi.com
FGH60T65SHD Rev. C0
热性能
FGH60T65SHD_F155
符号
RθJC(IGBT)
RθJC(Diode)
RθJA
参数
单位
°C/W
°C/W
°C/W
0.43
1.25
40
结至外壳热阻最大值
结至外壳热阻最大值
结至环境热阻最大值
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
每管数量
FGH60T65SHD_F155 FGH60T65SHD TO-247 G03
30
塑料管
不适用
不适用
IGBT 电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0V, IC = 1 mA
650
-
-
-
-
V
集电极－发射极击穿电压
击穿电压温度系数电压
ΔBVCES
/
I
C = 1 mA, 参考 25°C 数值
0.6
V/°C
ΔTJ
ICES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
μA
集电极切断电流
IGES
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 60 mA, VCE = VGE
4.0
-
5.5
1.6
7.5
2.1
V
V
G-E 阈值电压
I
C = 60 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
C = 175°C
VCE(sat)
集电极－发射极间饱和电压
-
2.14
-
V
T
动态特性
Cies
-
-
-
2980
110
36
-
-
-
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
26
48
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
td(off)
tf
87
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 60 A,
R
G = 6 Ω, VGE = 15 V,
47
ns
感性负载 , TC = 25°C
Eon
Eoff
Ets
1.69
0.63
2.32
25
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
td(on)
tr
td(off)
tf
60
ns
93
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 60 A,
R
G = 6 Ω, VGE = 15 V,
72
ns
感性负载 , C = 175°C
T
Eon
Eoff
Ets
2.54
1.04
3.58
mJ
mJ
mJ
导通开关损耗
关断开关损耗
总开关损耗
©2014 飞兆半导体公司
2
www.fairchildsemi.com
FGH60T65SHD Rev. C0
IGBT 电气特性 ( 接上页 )
符号 参数
测试条件
最小值 典型值 最大值 单位
Qg
-
-
-
102
18.4
37.5
-
-
-
nC
nC
nC
总栅极电荷
VCE = 400 V, IC = 60 A,
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
V
GE = 15 V
二极管电气特性
TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
T
C = 25°C
TC = 175°C
C = 175°C
-
-
-
-
-
-
-
2.3
1.9
2.7
VFM
IF = 30 A
V
二极管正向电压
-
-
-
-
-
-
Erec
trr
T
50
uJ
ns
反向恢复电能
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
34.6
197
58.6
810
二极管反向恢复时间
IF =30 A, dIF/dt = 200 A/μs
Qrr
nC
二极管反向恢复电荷
©2014 飞兆半导体公司
3
www.fairchildsemi.com
FGH60T65SHD Rev. C0
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
180
180
TC = 25oC
20V
TC = 175oC
20V
15V
12V
10V
15V
12V
10V
150
120
90
60
30
0
150
120
90
60
30
0
VGE = 8V
VGE = 8V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
180
3.5
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
150
3.0
TC = 175oC
120
120A
2.5
90
60
30
0
2.0
60A
IC = 30A
1.5
1.0
-50
0
1
2
3
4
0
50
100
150
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
20
16
12
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
12
60A
60A
IC = 30A
8
8
120A
120A
IC = 30A
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2014 飞兆半导体公司
4
www.fairchildsemi.com
FGH60T65SHD Rev. C0
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
10000
Common Emitter
TC = 25oC
12
Cies
300V
1000
100
VCC = 200V
400V
9
6
3
0
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
0
20
40
60
80
100
120
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
1000
200
td(off)
100
tr
tf
100
td(on)
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V
VCC = 400V, VGE = 15V
IC = 60A
IC = 60A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
10
5
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
10
400
tr
100
Eon
1
Eoff
td(on)
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
IC = 60A
TC = 25oC
TC = 175oC
10
4
0.1
0
10
20
30
40
50
20
40
60
80
100 120 140 160
Gate Resistance, RG [Ω]
Collector Current, IC [A]
©2014 飞兆半导体公司
5
www.fairchildsemi.com
FGH60T65SHD Rev. C0
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
500
20
10
td(off)
Eon
100
Eoff
1
tf
Common Emitter
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
10
4
0.1
20
40
60
80
100
120
20
40
60
80
100
120
1M
6
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
300
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
100
10μs
VGE = 15/0V, RG = 6Ω
100μs
1ms
10 ms
200
100
0
TC = 25oC
TC = 75oC
10
DC
1
TC = 100oC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
1
10
100
1000
1k
10k
100k
Switching Frequency, f[Hz]
Collector-Emitter Voltage, VCE [V]
图 17. 正向特性
图 18. 反向恢复电流
12
180
TC = 25oC
TC = 175oC ---
100
9
6
3
0
di/dt = 200A/μs
TJ = 175oC
TJ = 25oC
TJ = 75oC
di/dt = 100A/μs
di/dt = 200A/μs
di/dt = 100A/μs
10
TC = 25oC
TC = 75oC
TC = 175oC
5
1
0
20
40
60
80
0
1
2
3
4
Forward Voltage, VF [V]
Forward Current, IF [A]
©2014 飞兆半导体公司
6
www.fairchildsemi.com
FGH60T65SHD Rev. C0
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
1000
400
TC = 25oC
TC = 25oC
TC = 175oC ---
800
TC = 175oC ---
300
600
400
200
di/dt = 100A/μs
di/dt = 200A/μs
100
0
di/dt = 200A/μs
di/dt = 100A/μs
200
0
0
20
40
60
80
0
20
40
60
80
Forward Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 的瞬态热阻
0.6
0.5
0.1
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
Duty Factor, D = t1/t2
0.01
Peak Tj = Pdm x Zthjc + TC
single pulse
0.005
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2014 飞兆半导体公司
7
www.fairchildsemi.com
FGH60T65SHD Rev. C0
4.82
4.58
E
15.87
15.37
B
E
A
E
12.81
4.13
3.53
6.85
6.61
3.65
3.51
E
M
M
B A
0.254
5.58
5.34
E
1.35
0.51
5.20
4.96
13.08 MIN
20.82
20.32
E
1
3
3
1
1.87
1.53
(2X)
3.93
3.69
E
1.60
20.25
19.75
E
2.77
2.43
0.71
0.51
5.56
2.66
2.29
11.12
1.35
1.17
M
M
B A
0.254
NOTES: UNLESS OTHERW ISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAW ING CONFORMS TO ASME Y14.5 - 1994
E
DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAW ING FILENAME: MKT-TO247G03_REV02
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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