FGH60T65SQD-F155 [ONSEMI]
IGBT，650V，60A，场截止沟槽;
| 型号： | FGH60T65SQD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，60A，场截止沟槽 双极性晶体管 |
| 文件： | 总10页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 60 A
FGH60T65SQD-F155
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
th
series of field stop 4 generation IGBTs offer the optimum
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performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
V
I
C
CES
Features
650 V
60 A
• Max Junction Temperature 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
E
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 60 A
C
CE(sat)
G
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
E
C
G
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FGH60T65
SQD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH60T65SQD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
FGH60T65SQD−F155/D
November, 2019 − Rev. 3
FGH60T65SQD−F155
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGH60T65SQD−F155
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
20
V
V
Transient Gate to Emitter Voltage
Collector Current
30
V
I
@ TC < 25°C
@ TC < 100°C
@ TC < 25°C
120
60
A
C
I
Pulsed Collector Current
Pulsed Collector Current
240
A
A
LM
(Note 1)
I
240
CM
(Note 2)
I
Diode Forward Current
@ TC < 25°C
@ TC < 100°C
60
30
A
A
A
F
Diode Forward Current
I
Repetitive Forward Surge Current
240
FM
(Note 2)
P
D
Maximum Power Dissipation
@ TC < 25°C
@ TC < 100°C
333
167
W
W
T
Operating Junction Temperature Range
−55 to +175
−55 to +175
300
°C
°C
°C
J
T
Storage Temperature Range
STG
T
L
Maximum Lead Temp. For soldering Purposes, 18” from case for 5 sec
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 240 A, R = 21 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
FGH60T65SQD−F155
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.45
1.25
40
_C/W
_C/W
_C/W
q
JC
(Diode)
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH60T65SQD−F155
FGH60T65SQD
TO−247−3LD
Tube
−
−
30
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2
FGH60T65SQD−F155
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
= 0 V, I = 1 mA
650
−
−
−
V
V/°C
mA
CES
GE
C
DBV
I = 1 mA, Reference to 25°C
C
−
0.6
CES
J
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 60 mA, V = V
GE
2.6
4.5
1.6
6.4
2.1
V
V
GE(th)
C
C
C
CE
= 60 A V = 15 V
−
,
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 60 A V = 15 V,
,
GE
−
1.92
−
V
T
= 175°C
C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
−
3813
90
−
−
−
pF
pF
pF
ies
V
= 30 V V = 0 V,
, GE
CE
C
Output Capacitance
oes
f = 1MHz
C
Reverse Transfer Capacitance
13
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 15 A,
C
t
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
20.8
8
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
R
= 4.7 W, V = 15 V,
GE
t
r
Inductive Load, T = 25°C
C
t
Turn−Off Delay Time
Fall Time
102
11.2
227
100
327
d(off)
t
f
E
on
E
off
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ts
V
= 400 V, I = 30 A,
C
t
t
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
21.6
14.4
97.6
4.8
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
R
= 4.7 W, V = 15 V,
GE
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
d(off)
t
f
E
on
E
off
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
585
167
752
E
ts
V
= 400 V, I = 15 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
19.2
9.6
−
−
−
−
ns
ns
ns
ns
mJ
d(on)
R
= 4.7 W, V = 15 V,
GE
T
r
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
115
11.2
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
−
−
−
448
199
647
−
−
−
on
off
mJ
mJ
E
E
ts
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3
FGH60T65SQD−F155
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
V
= 400 V, I = 30 A,
C
T
Turn−On Delay Time
CC
G
−
−
−
−
20.8
16
−
−
−
−
ns
ns
ns
ns
mJ
d(on)
R
= 4.7 W, V = 15 V,
GE
T
r
Rise Time
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
106
8.8
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
−
−
−
942
386
−
−
−
on
off
mJ
mJ
E
E
1328
ts
V
CE
V
GE
= 400 V, I = 60 A,
Q
Total Gate Charge
−
−
−
79
22
27
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
= 25°C
Min
−
Typ
2.3
Max
2.7
−
Unit
I = 30 A
T
C
V
V
FM
Diode Forward Voltage
F
T
= 175°C
= 175°C
= 25°C
−
1.9
C
C
I = 30 A,
dI /dt = 200 A/ms
T
mJ
E
rec
Reverse Recovery Energy
F
−
50
−
F
T
ns
T
rr
Diode Reverse Recovery Time
−
34.6
197
58.6
810
−
C
T
= 175°C
= 25°C
−
−
C
T
nC
Q
Diode Reverse Recovery Charge
−
−
C
rr
T
C
= 175°C
−
−
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4
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS
240
180
120
60
240
20 V
15 V
12 V
20 V
15 V
12 V
T
C
= 25°C
T
C
= 175°C
180
120
60
10 V
= 8 V
10 V
= 8 V
V
GE
V
GE
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
240
180
120
60
3
Common Emitter
Common Emitter
V
GE
= 15 V
V
GE
= 1.5 V
T
C
T
C
= 25°C
= 175°C
120 A
60 A
2
1
I
= 30 A
50
C
0
0
1
2
3
4
5
−100
−50
0
100
150
200
Collector−Emitter Case Temperature, T [5C]
Collector−Emitter Voltage, V [V]
C
CE
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
Common Emitter
T
C
= 25°C
T
C
= 175°C
16
12
8
I
C
= 30 A
60 A
I
C
= 30 A
60 A
120 A
120 A
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
GE
GE
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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5
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS (Continued)
10000
1000
100
10
15
Common Emitter
= 25°C
T
C
C
ies
12
9
300 V
400 V
V
= 200 V
CC
C
oes
6
C
res
Common Emitter
= 0 V, f = 1 MHz
3
0
V
GE
T
C
= 25°C
1
10
30
1
0
25
50
75
100
Collector−Emitter Voltage, V [V]
Gate Charge, Q [nC]
CE
q
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
200
100
1000
t
d(off)
t
r
t
f
100
t
d(on)
Common Emitter
= 400 V, V = 15 V
Common Emitter
= 400 V, V = 15 V
V
CC
GE
V
CC
GE
I
C
= 60 A
I
C
= 60 A
T
C
T
C
= 25°C
= 175°C
T
C
T
C
= 25°C
= 175°C
10
5
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, R [W]
Gate Resistance, R [W]
G
G
Figure 9. Turn−on Characteristics vs.
Figure 10. Turn−off Characteristics
Gate Resistance
vs. Gate Resistance
5000
1000
E
on
t
r
E
off
t
d(on)
Common Emitter
= 400 V, V = 15 V
V
CC
GE
Common Emitter
= 15 V, R = 4.7 W
I
C
= 60 A
V
GE
G
T
C
T
C
= 25°C
= 175°C
T
C
T
C
= 25°C
= 175°C
100
0
10
20
30
40
50
0
25
50
75
100
125
150
Gate Resistance, R [W]
G
Collector Current, I [A]
C
Figure 11. Switching Loos vs.
Gate Resistance
Figure 12. Turn−on Characteristics vs.
Collector Current
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6
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS (Continued)
500
100
10000
1000
E
on
t
d(off)
t
f
E
off
10
1
Common Emitter
Common Emitter
V
T
= 15 V, R = 4.7 W
= 25°C
V
T
= 15 V, R = 4.7 W
= 25°C
GE
G
GE
G
C
C
C
100
50
T
C
= 175°C
T
= 175°C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Collector Current, I [A]
Collector Current, I [A]
C
C
Figure 13. Turn−off Characteristics vs.
Figure 14. Switching Loos vs.
Collector Current
Collector Current
300
250
200
150
100
50
400
100
Square Wave
T
≤ 175°C, D = 0.5,
J
V
= 400 V, V = 15/0 V, R = 4.7 W
CE
GE
G
10 ms
DC
ms
100
T
C
= 25°C
1 ms
10 ms
T
C
= 75°C
10
1
T
C
= 100°C
Notes:
1. T = 25°C
2. T = 175°C
C
J
3. Single Pulse
0
0.1
1k
10k
100k
1M
1
10
100
1000
Switching Frequency, f[Hz]
Collector−Emitter Voltage, V [V]
CE
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
180
100
12
9
T
T
= 25°C
= 175°C
C
C
di/dt = 200 A/ms
T
C
= 25°C
T
C
= 175°C
T
C
= 75°C
6
3
0
di/dt = 100 A/ms
di/dt = 200 A/ms
di/dt = 100 A/ms
10
1
0
1
2
3
4
5
6
0
20
40
60
80
Forward Voltage, V [V]
F
Forward Current, I [A]
F
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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7
FGH60T65SQD−F155
TYPICAL CHARACTERISTICS (Continued)
400
300
200
100
0
1000
T
C
T
C
= 25°C
= 175°C
T
C
T
C
= 25°C
= 175°C
800
600
400
200
di/dt = 200 A/ms di/dt = 100 A/ms
di/dt = 100 A/ms
di/dt = 200 A/ms
0
0
20
40
60
80
0
20
40
60
80
Forward Current, I [A]
Forward Current, I [A]
F
F
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
0.6
0.5
0.1 0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
single pulse
0.01
Duty Factor, D = t1/t2
Peak T = P
× Z
+ T
J
DM
THJC
C
0.005
−5
−4
−3
−2
−1
0
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
single pulse
Peak T = P
× Z
+ T
J
DM
THJC
C
0.01
−5
−4
−3
−2
−1
0
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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