FGY60T120SWD [ONSEMI]
1200V, 60A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging;![FGY60T120SWD](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/FGY60T120SWD_2239192_icpdf.jpg)
型号: | FGY60T120SWD |
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描述: | 1200V, 60A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging 双极性晶体管 |
文件: | 总8页 (文件大小:286K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
www.onsemi.com
IGBT - Power, Co-PAK
N-Channel, Field Stop VII
BV
V
I
C
CES
CE(SAT)
1200 V
1.7 V
60 A
(FS7), Non-SCR, TO247-3L
1200 V, 1.7 V, 60 A
PIN CONNECTIONS
C
FGY60T120SWD
Description
Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 3−lead package, FGY60T120SWD offers the
optimum performance with low switching and conduction losses for
high−efficiency operations in various applications like Solar, UPS,
and ESS.
G
E
Features
• Maximum Junction Temperature T = 175°C
J
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Smooth and Optimized Switching
• Low Switching Loss
• RoHS Compliant
G
C
Applications
E
• Boost and Inverter in Solar System
TO247−3LD
CASE 340CD
• UPS
• Energy Storage System
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
MARKING DIAGRAM
J
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol
Value
1200
20
Unit
V
V
CES
V
GES
V
$Y&Z&3&K
FGY60T
Transient Gate−to−Emitter Voltage
30
V
120SWD
Collector Current
T
= 25°C
I
C
105
A
C
(Note 1)
T
= 100°C
= 25°C
60
C
Power Dissipation
T
P
635
317
240
W
A
C
D
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
T
T
= 100°C
C
Pulsed Collector Current
= 25°C,
= 10 ms
(Note 2)
I
CM
C
P
= 2−Digit Lot Traceability Code
t
FGY60T120SWD = Specific Device Code
Diode Forward Current
T
= 25°C
I
120
600
240
A
A
C
F
T
C
= 100°C
ORDERING INFORMATION
Pulsed Diode Maximum
Forward Current
T
P
= 25°C,
= 10 ms
I
FM
C
Device
Package
Shipping
t
(Note 2)
FGY60T120SWD TO−247−3LD
(Pb−Free)
30 Units /
Tube
Operating Junction and Storage
Temperature Range
T , T
−55 to
°C
°C
J
STG
+175
Lead Temperature for Soldering Purposes
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. Repetitive rating: Pulse width limited by max. Junction temperature
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
March, 2023 − Rev. 0
FGY60T120SWD/D
FGY60T120SWD
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.24
0.41
40
Unit
Thermal Resistance, Junction−to−Case for IGBT
Thermal Resistance, Junction−to−Case for Diode
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS OF IGBT (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−to−Emitter Breakdown Voltage
BV
V
GE
= 0 V, I = 5 mA
1200
V
CES
C
Collector−to−Emitter Breakdown Voltage
DBV
/
1.5
V/°C
CES
Temperature Coefficient
DT
J
CES
GES
Zero Gate Voltage Collector Current
Gate−to−Emitter Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = V
CES
40
mA
GE
CE
I
V
= 20 V, V = 0 V
400
nA
GE
CE
Gate Threshold Voltage
V
V
= V , I = 60 mA
5.6
6.55
1.68
2.25
7.4
2.0
V
GE(TH)
GE
CE
C
Collector−to−Emitter Saturation Voltage
V
V
= 15 V, I = 60 A, T = 25°C
1.35
CE(SAT)
GE
C
J
V
GE
= 15 V, I = 60 A, T = 175°C
C J
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 0 V, V = 30 V, f = 1 MHz
5093
193
pF
nC
IES
GE
CE
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OES
C
RES
25.2
174
Q
V
= 600 V, V = 15 V, I = 60 A
G
CE GE C
Gate−to−Emitter Charge
Gate−to−Collector Charge
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
Q
43.4
65.1
GE
GC
Q
t
t
V
CE
= 600 V, V = 0/15 V, I = 30 A,
30.4
146.4
15.2
68
ns
d(on)
GE
C
R
= 4.7 W, T = 25°C
G
J
d(off)
t
r
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
E
E
1.6
mJ
ns
on
off
0.9
E
2.6
ts
t
t
V
= 600 V, V = 0/15 V,
31.2
130
40.8
68.8
4
d(on)
d(off)
CE
GE
I
C
= 60 A, R = 4.7 W, T = 25°C
G J
t
r
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
on
E
off
mJ
1.9
E
5.8
ts
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2
FGY60T120SWD
ELECTRICAL CHARACTERISTICS OF IGBT (T = 25°C unless otherwise noted)
J
Parameter
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
27.2
168
16
Max
Unit
t
t
V
GE
= 0/15 V, I = 30 A, V = 600 V,
ns
d(on)
d(off)
C
CE
R
= 4.7 W, T = 175°C
G
J
Turn−Off Delay Time
Rise Time
t
r
Fall Time
t
102.4
2.6
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
E
on
E
off
mJ
ns
1.2
E
ts
3.8
t
t
V
= 0/15 V, I = 60 A,
28.8
153.6
38.4
120
5.7
d(on)
d(off)
GE
C
V
CE
= 600 V, R = 4.7 W, T = 175°C
G J
t
r
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Forward Voltage
E
on
E
off
mJ
V
2.8
E
ts
8.5
V
I = 60 A, T = 25°C
1.62
1.91
2
2.22
F
F
J
I = 60 A, T = 175°C
F
J
DIODE SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Reverse Recovery Time
t
V
= 600 V, I = 30 A,
143
2262
0.7
ns
nC
mJ
A
rr
R
F
dI /dt = 1000 A/ms, T = 25°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
E
rec
I
32
RRM
t
rr
V
R
= 600 V, I = 60 A,
200
3486
1.1
ns
nC
mJ
A
F
dI /dt = 1000 A/ms, T = 25°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
E
rec
I
35
RRM
t
rr
V
= 600 V, I = 30 A,
221
4908
1.7
ns
nC
mJ
A
R
F
dI /dt = 1000 A/ms, T = 175°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
E
rec
I
44
RRM
t
rr
V
= 600 V, I = 60 A,
334
8665
3.1
ns
nC
mJ
A
R
F
dI /dt = 1000 A/ms, T = 175°C
F
J
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Q
rr
E
rec
I
52
RRM
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGY60T120SWD
TYPICAL CHARACTERISTICS
T
T
J=−55°C
J=25°C
V
GE=8V
VGE=8V
200
150
100
50
200
150
100
50
V
=10V
V =10V
GE
GE
V
GE=12V
VGE=12V
VGE=15V
V
GE=15V
VGE=20V
VGE=20V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
100
80
60
40
20
0
T
J=175°C
Common Emitter
VCE=20V
V
GE=8V
200
150
100
50
V
=10V
GE
V
GE=12V
VGE=15V
VGE=20V
T
J=25°C
T
J=175°C
0
0
1
2
3
4
5
0
2
4
6
8
10
12
VCE, Collector to Emitter Voltage (V)
VGE, Gate to Emitter Voltage (V)
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
3
2.5
2
Common Emitter
VGE=15V
Common Emitter
VGE=15V
200
150
100
50
T
J=25°C
T
J=175°C
1.5
1
0.5
0
IC=30A
IC=60A
IC=90A
0
0
1
2
3
4
5
−100
−50
0
50
100
150
200
VCE, Collector to Emitter Voltage (V)
T
J, Collector−Emitter Junction Temperature (°C)
Figure 5. Saturation Characteristics
Figure 6. Saturation Voltage vs. Junction
Temperature
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4
FGY60T120SWD
TYPICAL CHARACTERISTICS
10000
1000
100
10
Common Emitter
IC=60A
14
12
10
8
Common Emitter
VGE=0V
T
J=25°C
f=1MHz
6
4
VCC=200V
CIES
COES
CRES
2
VCC=400V
VCC=600V
1
0
0.1
1
10
0
20
40
60
80 100 120 140 160 180 200
QG, Gate Charge (nC)
VCE, Collector to Emitter Voltage (V)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
Common Emitter
VGE=15V
VCE=600V
IC=60A
*Note:
T
C=25°C,
100
T
J=175°C
10
1
Single Pulse
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
td(on)_T
J=25°C
td(on)_T
J=175°C
t _T
J=25°C
r
t _T
J=175°C
r
0.1
10
1
10
100
1000
0
5
10
15
20
R
G, Gate Resistance (W)
25
30
35
40
45
50
VCE, Collector to Emitter Voltage (V)
Figure 9. SOA Characteristics
Figure 10. Turn−On Switching Time vs. Gate
Resistance
Common Emitter
EON_T
J=25°C
Common Emitter
VGE=15V
VCE=600V
IC=60A
EON_T
J=175°C
VGE=15V
EOFF_T
J=25°C
VCE=600V
IC=60A
EOFF_T
J=175°C
1000
10
100
10
td(off)_T
J=25°C
td(off)_T
J=175°C
t_T
J=25°C
f
t_T
J=175°C
f
1
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
R
G, Gate Resistance (W)
25
30
35
40
45
50
R
G, Gate Resistance (W)
Figure 11. Turn−Off Switching Time vs. Gate
Figure 12. Switching Loss vs. Gate Resistance
Resistance
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5
FGY60T120SWD
TYPICAL CHARACTERISTICS
1000
Common Emitter
VGE=15V
Common Emitter
VGE=15V
VCE=600V
VCE=600V
R
G=4.7W
=4.7W
RG
100
100
10
td(off)_T
td(off)_T
J=25°C
t_T
td(on)_T
J=25°C
J=175°C
td(on)_T
J=175°C
J=25°C
t _T
J=25°C
f
r
t_T
J=175°C
t _T
J=175°C
f
r
1
10
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
IC, Collector Current (A)
IC, Collector Current (A)
Figure 13. Turn−On Switching Time vs. Collector
Figure 14. Turn−Off Switching Time vs. Collector
Current
Current
VGE=0V
Common Emitter
VGE=15V
VCE=600V
200
R
G=4.7W
10
1
150
100
50
EON_T
EON_T
J=25°C
EOFF_T
J=175°C
J=25°C
T
J=175°C
EOFF_T
J=175°C
T
J=25°C
0.1
0
0
25
50
75
100 125 150 175 200
0
1
2
3
4
5
IC, Collector Current (A)
VF, Forward Voltage (V)
Figure 15. Switching Loss vs. Collector Current
Figure 16. Diode Forward Characteristics
600
500
400
300
200
100
80
VR=600V
IF=60A
T
J=25°C
VR=600V
IF=60A
T
J=175°C
60
40
20
0
T
J=25°C
T
J=175°C
400
600
800
1000
1200
1400
1600
400
600
800
1000
1200
1400
1600
diF/dt, Diode Current Slope (A/us)
diF/dt, Diode Current Slope (A/us)
Figure 17. Diode Reverse Recovery Current
Figure 18. Diode Reverse Recovery Time
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6
FGY60T120SWD
TYPICAL CHARACTERISTICS
10000
VR=600V
IF=60A
8000
6000
4000
2000
0
T
J=25°C
T
J=175°C
400
600
800
1000
1200
1400
1600
diF/dt, Diode Current Slope (A/us)
Figure 19. Diode Stored Charge Characteristics
1
0.1
D=0 is Single Pulse
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
0.01
0.001
Notes:
ZθJC
(t)=0.24°C/W Max
P
DM
TJM=PDMxZθJC()t)+TC
t
1
Duty Cycle,D=t/t/t 2
1
t
2
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
t, Rectangular Pulse Duration (sec)
Figure 20. Transient Thermal Impedance of IGBT
1
0.1
D=0 is Single Pulse
0.01
0.001
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
ZθJC
(t)=0.41°C/W Max
P
DM
TJM=PDMxZθJC(t()t+)+TTC
t
1
Duty Cycle,D=t/t 2
1
t
2
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
t, Rectangular Pulse Duration (sec)
Figure 21. Transient Thermal Impedance of Diode
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7
FGY60T120SWD
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
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