FJA4210OTU [ONSEMI]
PNP外延硅晶体管;型号: | FJA4210OTU |
厂家: | ONSEMI |
描述: | PNP外延硅晶体管 局域网 放大器 晶体管 |
文件: | 总7页 (文件大小:317K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2008
FJA4210
PNP Epitaxial Silicon Transistor
•
•
•
•
•
Audio Power Amplifier
High Current Capability : IC= -10A
High Power Dissipation
Wide S.O.A
Complement to FJA4310
TO-3P
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-200
Units
V
V
V
V
I
Collector-Base Voltage
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
-140
V
-6
V
-10
A
C
I
-1.5
A
B
P
Collector Dissipation (TC=25°C)
Junction Temperature
100
W
°C
°C
C
T
150
J
T
Storage Temperature
- 55 ~ 150
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=-5mA, IE=0
Min.
Typ.
Max.
Units
V
-200
-140
-6
BVCEO
BVEBO
ICBO
IC=-50mA, RBE=¥
IE=-5mA, IC=0
V
V
VCB=-200V, IE=0
VEB=-6V, IC=0
-10
-10
mA
mA
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE=-4V, IC=-3A
IC=-5A, IB=-0.5A
VCB=-10V, f=1MHz
VCE=-5V, IC=-1A
50
180
-0.5
VCE(sat)
Cob
Collector-Emitter Saturation Voltage
Output Capacitance
V
400
30
pF
fT
Current Gain Bandwidth Product
MHz
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
h
Classification
FE
Classification
R
O
Y
hFE
50 ~ 100
70 ~ 140
90 ~ 180
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
1
Typical Characteristics
IB = - 300mA
IB = - 250mA
1000
100
10
-10
VCE = - 4 V
IB = - 400mA
-9
IB = - 200mA
-8
-7
-6
-5
-4
-3
-2
-1
-0
Ta = 25 o
C
Ta = 125 o
C
IB = - 150mA
IB = - 100mA
Ta = - 25 o
C
IB = - 50mA
IB = - 20mA
-0.1
-1
-10
-0
-1
-2
-3
-4
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-1
IC = 10 IB
-0.1
Ta = 125 o
C
Ta = 25 o
C
IC= - 10A
Ta = - 25 o
C
IC= - 5A
-0.01
-0.01
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-0.1
-1
-10
IC [A], COLLECTOR CURRENT
IB [A], BASE CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
-10
t=10ms
VCE = - 4 V
IC (Pulse)
-10
-8
-6
IC (DC)
t=100ms
Ta = 25 o
C
-1
-4
-2
-0
Ta = 125 o
C
Ta = - 25 o
C
TC = 25oC
Single Pulse
-0.1
-10
-100
-0.0
-0.5
-1.0
-1.5
-2.0
VCE [V], COLLECTOR-EMITTER VOLTAGE
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
2
Typical Characteristics (Continued)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
3
Package Dimension (TO-3P)
5.00
4.60
15.80
15.40
1.65
1.45
5.20
4.80
(R0.50)
20.10
19.70
18.90
18.50
3.70
3.30
(1.85)
2.20
1.80
2.60
2.20
20.30
19.70
3.20
2.80
1.20
0.55
0.80
1
3
0.75
0.55
5.45
5.45
(R0.50)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
4
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Power247®
SuperSOT™-8
SyncFET™
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
FAST®
FastvCore™
FPS™
FRFET®
OPTOPLANAR®
®
UniFET™
VCX™
PDP-SPM™
Power220®
Global Power ResourceSM
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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