FJA4213OTU [FAIRCHILD]
PNP Epitaxial Silicon Transistor; PNP外延硅晶体管
| 型号： | FJA4213OTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP Epitaxial Silicon Transistor |
| 文件： | 总6页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2008
2SA1962/FJA4213
PNP Epitaxial Silicon Transistor
Applications
•
•
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: IC = -15A
High Power Dissipation : 130watts
High Frequency : 30MHz.
High Voltage : VCEO= -230V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5242/FJA4313.
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
TO-3P
1.Base 2.Collector 3.Emitter
1
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-230
-230
-5
Units
BVCBO
BVCEO
BVEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
A
A
-15
IB
Base Current
-1.5
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
130
1.04
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
0.96
°C/W
* Device mounted on minimum pad size
h
Classification
FE
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
www.fairchildsemi.com
1
Electrical Characteristics* T =25°C unless otherwise noted
a
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=-5mA, IE=0
Min. Typ. Max. Units
-230
-230
-5
V
V
IC=-10mA, RBE=∞
IE=-5mA, IC=0
V
VCB=-230V, IE=0
VEB=-5V, IC=0
-5.0
-5.0
160
µA
µA
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V, IC=-1A
VCB=-10V, f=1MHz
55
35
hFE2
DC Current Gain
60
-0.4
-1.0
30
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-3.0
-1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Cob
360
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
2SA1962RTU
2SA1962OTU
FJA4213RTU
FJA4213OTU
Marking
A1962R
A1962O
J4213R
Package
TO-3P
Packing Method
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
TUBE
TUBE
TUBE
TUBE
TO-3P
TO-3P
J4213O
TO-3P
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
www.fairchildsemi.com
2
Typical Characteristics
-20
IB = -900mA
IB = -800mA
IB = -1A
Tj = 125oC
VCE = -5V
-18
-16
-14
-12
-10
-8
Tj = 25oC
IB = -700mA
100
10
1
Tj = -25oC
IB = -300mA
IB = -200mA
IB = -100mA
-6
-4
-2
-0
-2
-4
-6
-8
-10
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
100
10000
1000
100
Ic=-10Ib
Ic=-10Ib
Tj=-25oC
Tj=25oC
Tj=25oC
Tj=125oC
Tj=125oC
Tj=-25oC
10
0.1
0.1
1
10
1
10
Ic[A], COLLECTORCURRENT
Ic[A], COLLECTORCURRENT
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
14
12
VCE = 5V
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
VBE[V], BASE-EMITTER VOLTAGE
Pulse duration [sec]
Figure 6. Thermal Resistance
Figure 5. Base-Emitter On Voltage
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
www.fairchildsemi.com
3
Typical Characteristics
-100
-10
160
140
120
100
80
IC MAX. (Pulsed*)
IC MAX. (DC)
10ms*
100ms*
DC
-1
60
40
-0.1
-0.01
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
20
0
0
25
50
75
100
125
150
175
1
10
100
TC[oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Power Derating
Figure 8. Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
www.fairchildsemi.com
4
Package Dimensions
TO-3P
15.60 0.20
4.80 0.20
+0.15
13.60 0.20
9.60 0.20
ø3.20 0.10
1.50
–0.05
2.00 0.20
3.00 0.20
1.00 0.20
1.40 0.20
+0.15
0.60
–0.05
5.45TYP
5.45TYP
[5.45 0.30
]
[5.45 0.30]
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
www.fairchildsemi.com
5
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
www.fairchildsemi.com
6
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