FJD3305H1TM [ONSEMI]
NPN 硅晶体管;
| 型号： | FJD3305H1TM |
| 厂家： | 
ONSEMI |
| 描述： | NPN 硅晶体管 开关 晶体管 |
| 文件： | 总7页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2012
FJD3305H1
NPN Silicon Transistor
Features
• High Voltage Switch Mode Application
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
• Wave Soldering
DPAK
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TC = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
700
400
9
V
V
V
A
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
4
ICP
8
IB
2
PC
Collector Dissipation, Ta = 25°C
Tc = 25°C
1.1
50
W
W
TJ
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
-65 to 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
RθJA
RθJC
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Value
110
Units
°C/W
°C/W
2.0
* Device mounted on minimum pad size
Ordering Information
Part Number
FJD3305H1TM
Marking
J3305H1
Package
D-PAK
Packing Method
Tape & Reel
Remarks
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
www.fairchildsemi.com
1
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdwon Voltage
Conditions
IC = 500μA, IE = 0
Min.
700
400
9
Typ.
Max.
Units
V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
IE = 500μA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
V
1
1
μA
μA
IEBO
hFE1
hFE2
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
19
8
28
40
VCE(sat)
Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
0.5
0.6
1.0
V
V
V
IC = 4A, IB = 1A
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
V
fT
Cob
tON
tSTG
tF
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
4
MHz
pF
65
VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5Ω
0.8
4.0
0.9
μs
μs
μs
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
www.fairchildsemi.com
2
Typical Performance Characteristics
100
10
1
4.5
4.0
VCE = 5V
Ta = 125 O
C
Ta = 75 O
C
IB = 300mA
3.5
IB = 250mA
3.0
IB = 200mA
Ta = 25 O
C
Ta = - 25 O
C
2.5
2.0
1.5
1.0
0.5
0.0
IB = 150mA
IB = 100mA
IB = 50mA
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC Current Gain
Figure 1. Static Characteristic
10
10
IC = 4 IB
IC = 4 IB
Ta = 125 O
C
1
Ta = - 25 O
C
Ta = 25 O
C
Ta = 75 O
C
1
Ta = - 25 O
C
0.1
Ta = 75 O
C
Ta = 25 O
C
Ta = 125 O
C
0.01
0.01
0.1
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 4. Base - EmitterSaturation Voltage
Figure 3. Collector- Emitter Saturation Voltage
10000
tSTG
F=1MHz
Cib
1000
Ta = 25 O
C
tF
1000
Ta = 125 O
C
100
Cob
10
100
IB1 = - IB2 = 0.4A
VCC = 125V
1
1
1
10
100
IC [A], COLLECTOR CURRENT
REVERSE VOLTAGE[V]
Figure 5. Switching Time
Figure 6. Capacitance
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
10
10
8
VBE(OFF)=-9V
VBE(OFF)=-7V
VCC=50V, LC=1mH
VBE(OFF)=-5V, IB2=-1.0A
RBB=0.7 Ohms
8
VBE(OFF)=-5V
Ic/Ib = 5
VBE(OFF)=-3V
6
6
Ic/Ib = 4
4
4
Ic/Ib = 3
VCC=50V, LC=1mH
VBE(OFF)=-5V, IB2=-1.0A
RBB=0.7 Ohms
2
2
IC/IB=5
0
0
1
2
3
4
5
6
7
8
0
100
200
300
400
500
600
700
800
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Collector- Emitter Saturation Voltage
at RBSOA
60
50
40
30
20
10
0
Ic/Ib = 5
200
Ic/Ib = 4
VCC=50V, LC=1mH
VBE(OFF)=-5V, IB2=-1.0A
RBB=0.7 Ohms
160
Ic/Ib = 3
120
80
40
0
0
25
50
75
100
125
150
175
1
2
3
4
5
6
7
8
Tc[oC], CASE TEMPERATURE
IC [A], COLLECTOR CURRENT
Figure 9. Input Pulse width vs Correct current
at RBSOA
Figure 10. Power Derating
Figure 11. RBSOA Test Circuit
© 2012 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A1
www.fairchildsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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